Transistors IC SMD Type TrenchMOSTM standard level FET KUK7604-40A 1 .2 7 -0+ 0.1.1 TO-263 Features TrenchMOSTM technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 rated 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 175 5 .6 0 Q101 compliant +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 40 V drain-gate voltage (DC) RGS = 20 kÙ VDGR 40 V gate-source voltage (DC) VGS drain-source voltage (DC) drain current (DC) Tmb = 25 ; VGS = 10 V ID drain current (DC) Tmb = 100 ; VGS = 10 V 20 V 198 A 75 A peak drain current *1 IDM 794 A total power dissipation Tmb = 25 Ptot 300 W storage temperature Tstg -55 to 175 operating junction temperature Tj -55 to 175 reverse drain current (DC) Tmb = 25 IDR 198 A 75 A pulsed reverse drain current *2 IDRM 794 A non-repetitive avalanche energy W DSS 1.6 J thermal resistance from junction to ambient Rth(j-a) 50 K/W thermal resistance from junction to mounting base Rth(j-mb) 0.5 K/W *1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID =75 A;VDS 40 V; VGS = 10 V; RGS = 50Ù,starting Tmb= 25 www.kexin.com.cn 1 Transistors IC SMD Type KUK7604-40A Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ IDSS V ID = 0.25 mA; VGS = 0 V;Tj = -55 36 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 VDS = 40 V; VGS = 0 V;Tj = 25 drain-source on-state resistance IGSS RDSon VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A;Tj = 25 0.05 Qgs gate-to-drain (Miller) charge Qgd input capacitance Ciss output capacitance Coss reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage 2 Qg(tot) gate-to-source charge VGS = 10 V; VDD = 32 V;ID = 25 A V 4.4 V 10 mA 500 mA 2 100 nA 3.9 4.5 mÙ 8.5 mÙ VGS = 10 V; ID = 25 A;Tj = 175 total gate charge 4 V VDS = 40 V; VGS = 0 V;Tj = 175 gate-source leakage current Unit ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 1 mA; VDS = VGS;Tj = -55 drain-source leakage current Max 40 117 nC 19 nC 50 nC 4300 5730 pF 1400 1680 pF Crss 800 1100 pF td(on) 33 ns 110 ns 151 ns tr VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù td(off) tf Ld Ls VSD from drain lead 6 mm from package to centre of die 76 ns 4.5 nH 2.5 nH from source lead to source bond pad 7.5 IS = 40 A; VGS = 0 V; 0.85 nH 1.2 V reverse recovery time trr IS = 20 A;dIS/dt = -100 A/ìs 96 ns recovered charge Qr VGS = -10 V; VDS = 30 V 224 nC www.kexin.com.cn