T-13/4 670 nm High Radiant Intensity Emitter Technical Data HEMT-3300 Features Description • • • • • • The HEMT-3300 is a visible, near-IR, source using a GaAsP on GaP LED chip optimized for maximum quantum efficiency at 670 nm. The emitter’s beam is sufficiently narrow to minimize stray flux problems, yet broad enough to simplify optical High Efficiency Nonsaturating Output Narrow Beam Angle Visible Flux Aids Alignment Bandwidth: DC to 3 MHz IC Compatible/Low Current Requirement alignment. This product is suitable for use in consumer and industrial applications such as optical transducers and encoders, smoke detectors, assembly line monitors, small parts counters, paper tape readers, and fiber optic drivers. Package Dimensions UNDIFFUSED, UNTINTED (CLEAR) PLASTIC 5.08 (0.200) 4.32 (0.170) 9.47 (0.373) 7.95 (0.313) 0.89 (0.035) 0.64 (0.025) 26.67 (1.05) MIN. 25.40 (1.00) MIN. 0.64 (0.025) 0.36 (0.014) 0.41 (0.016) 0.36 (0.014) 6.10 (0.240) 5.59 (0.220) CATHODE 2.54 (0.10) NOM. NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES). 2. LEADS ARE MILD STEEL, SOLDER DIPPED. 3. AN EPOXY MENISCUS MAY EXTEND ABOUT 1 mm (0.040 in) DOWN THE LEADS. 2 Absolute Maximum Ratings at TA = 25°C Power Dissipation .................................................................... 120 mW (derate linearly from 50°C at 1.6 mW/°C) Average Forward Current ............................................................ 30 mA (derate linearly from 50°C at 0.4 mA/ °C) Peak Forward Current ....................................................... See Figure 5 Operating and Storage Temperature Range ................ -55°C to +100°C Lead Soldering Temperature .................................. 260°C for 5 seconds (1.6 mm [0.063 in.] from body) Electrical/Optical Characteristics at TA = 25 °C Symbol Ie Ke ηv 2θ1/2 λPEAK ∆λPEAK/∆T tr tf CO BVR VF ∆VF /∆T RθJ-PIN Description Axial Radiant Intensity Temperature Coefficient of Intensity Luminous Efficacy Half Intensity Total Angle Peak Wavelength Spectral Shift Temperature Coefficient Output Rise Time (10% to 90%) Output Fall Time (90% to 10%) Capacitance Reverse Breakdown Voltage Forward Voltage Temperature Coefficient of VF Thermal Resistance Min. 200 Typ. Max. 500 -0.009 Units µW/sr °C-1 Test Conditions IF = 10 mA IF = 10 mA, Note 1 22 22 670 0.089 lm/W deg. nm nm/°C 120 ns Note 2 Note 3, IF = 10 mA Measured at Peak Measured at Peak, Note 4 IPEAK = 10 mA 50 ns IPEAK = 10 mA 15 pF V VF = 0; f = 1 MHz IR = 100 µA 5.0 1.9 -2.2 2.5 260 Notes: 1. Ie (T) = I e (25°C)exp [Ke(T - 25°C)]. 2. IV = ηvI e where Iv is in candela, Ie in watts/steradian and ηv in lumen/watt. 3. θ1/2 is the off-axis angle at which the radiant intensity is half the axial intensity. 4. λPEAK (T) = λPEAK (25°C) + (∆λPEAK/∆T) (T - 25°C). V mV/°C IF = 10 mA IF = 100 µA °C/W LED Junction to Cathode Lead. Fig. 3, 4 6 1 2 3 60 IF – FORWARD CURRENT – mA TA = 25° C 1.0 0.8 0.6 0.4 0.2 TA = 100° C TA = 25° C 50 40 30 20 10 0 1.6 0 600 620 640 660 680 700 720 740 760 λ – WAVELENGTH – nm Figure 1. Relative Intensity vs. Wavelength. TA = 25° C DC 0.1 1 2 3 45 2.4 2.6 2.8 TA = 25° C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 .1 .2 .3 .5 10 20 30 50 80 IF – FORWARD CURRENT – mA 1 2 3 45 10 20 30 50 100 IPEAK – PEAK CURRENT – mA Figure 3. Relative Radiant Intensity vs. Forward Current. Figure 4. Relative Efficiency (Radiant Intensity per Unit Current) vs. Peak Current. 4 20° 10° 1.0 0.25 30° 40° 3 0.8 0.20 TA = 25° C 50° 100 z z Hz 300 H z z 1 KH 3 KH z 10 KH 30 KH z Hz 100 K 70° 80° 1 1 0.6 0.15 0.4 0.10 0.2 0.05 60° 2 300 KH IPEAK MAX. RATIO OF MAX. PEAK CURRENT TO MAX. DC CURRENT IDC MAX. 2.2 1.4 PULSED 10 µs 100 Hz 1 0.01 .3 .5 2.0 Figure 2. Forward Current vs. Forward Voltage. RELATIVE EFFICIENCY (NORMALIZED AT 10 mA DC) RELATIVE RADIANT INTENSITY (NORMALIZED AT 10 mA) 10 1.8 VF – FORWARD VOLTAGE – V 10 100 1000 10,000 tp – PULSE DURATION – µs Figure 5. Maximum Tolerable Peak Current vs. Pulse Duration. (I DC MAX as per MAX Ratings) 90° 0 5 10 15 20 25 30 35 40 0.00 45 φe (θ) NORMALIZED FLUX-TO-INTENSITY RATIO WITHIN A GIVEN CONE ANGLE Ie (0) RELATIVE INTENSITY 1.2 Θ – OFF-AXIS ANGLE – DEGREES (CONE HALF-ANGLE) Figure 6. Far-Field Radiation Pattern. www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies, Inc. Obsoletes 5952-8498 (8/76) 5964-6427E (11/99)