AGILENT IAM

Agilent IAM-92516 High
Linearity GaAs FET Mixer
Data Sheet
Features
DC = 5V @ 26 mA (Typ.)
RF = 1.91 GHz, PinRF = -10 dBm;
LO = 1.7 GHz, PinLO = -3 dBm;
IF = 210 MHz unlesss otherwise
specified
• Lead-free Option Available
Description
Agilent Technologies’s IAM-92516
is a high linearity GaAs FET Mixer
using 0.5 µm enhancement mode
pHEMT technology. This device
houses in Pb-free and Halogen free
16 pins LPCC 3x3[2] plastic
package. The IAM-92516 has builtin LO buffer amplifier which
requires -3 dBm LO power to
deliver an input third order
intercept point of 27 dBm. LO port
is 50 ohm matched and can be
driven differential or single ended
while IF port is 200 ohm matched
and fully differential. RF port
requires external matching
network for optimum input return
loss and IIP3 performance.
RF and LO frequency range
coverage from 400 to 3500 MHz
and IF coverage is from DC to 300
MHz. This mixer consumes 26 mA
of current from a single 5V supply.
Conversion loss is typically 6 dB
and noise figure is typically 12.5
dB. Excellent output power at 1 dB
compression of 9 dBm. LO to IF,
LO to RF and RF to IF isolation are
greater than 30 dB.
The IAM-92516 is ideally suited for
frequency up/down conversion for
base station radio card receiver
and transmitter, microwave link
transceiver, MMDS, modulation
and demodulation for receiver and
transmitter and general purpose
resistive FET mixer, which require
high linearity. All devices are 100%
RF and DC tested.
Pin Connections and
Package Marking
• High Linearity: 27 dBm IIP3
• Conversion Loss: 6 dB typical
• Wide band operation: 400-3500
MHz RF & LO input DC – 300 MHz
IF output
• Fully differential or single ended
operation
• High P1dB: 9 dBm typical
• Low current consumption: [email protected]
26 mA typical
• Excellent uniformity in product
specifications
• Small LPCC 3.0 x 3.0 x 0.75 mm
package
Notes:
Package marking provides orientation and
identification
“M3” = Device Code
“X” = Month code indicates the month of
manufacture
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
• MTTF > 300 years[1]
• MSL-1 and lead-free
• Tape-and-Reel packaging option
available
Applications
• Frequency up/down converter for
base station radio card, microwave
link transceiver, and MMDS
• Modulation and demodulation for
receiver and transmitter
• General purpose resistive FET
mixer for other high linearity
applications
Notes:
1. Refer to reliability datasheet for detailed
MTTF data.
2. Conform to JEDEC reference outline
MO229 for DRP-N
IAM-92516 Absolute Maximum Ratings [1]
Parameter
Units
Absolute Max.
Device Voltage
V
10
CW RF Input Power[2]
dBm
+30
CW LO Input Power[2]
dBm
20
Channel Temperature
°C
150
Storage Temperature
°C
-65 to 150
Thermal Resistance[2,4]
θch-c = 47.6°C/W
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions and
TA = 25°C.
3. Board (package belly) temperature TB is
25°C. Derate 21 mW/°C for TB > 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Specifications
TA = 25°C, DC =5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO =1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
FRF
Frequency Range, RF
MHz
400
3500
FLO
Frequency Range, LO
MHz
400
3500
FIF
Frequency Range, IF
MHz
DC
300
Id
Device Current
mA
22
Gc[3]
Conversion Loss
dB
IIP3[2]
Input Third Order Intercept Point
dBm
NF[3]
SSB Noise Figure
dB
12.5
P1dB [3]
Output Power at 1 dB Compression
dBm
9
RLRF
RF Port Return Loss
dB
19
RLLO
LO Port Return Loss
dB
24
RLIF
IF Port Return Loss
dB
21
ISOLL-R
LO-RF Isolation
dB
34
ISOLL-I
LO-IF Isolation
dB
56
ISOLR-L
RF-IF Isolation
dB
33
22
Typ.
Max.
Std Dev.[1]
26
30
0.89
6
6.9
0.08
27
0.43
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of
this product and is intended to be used as an estimate for distribution of the typical specification.
2. IIP3 test condition: FRF1 = 1.91 GHz, FRF2 = 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency FLO= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Simplified Schematic
Figure 1. IAM-92516 Test Board.
2
Figure 2. Schematic Diagram of IAM-92516 Test Circuit.
200
160
160
120
–3 Std
FREQUENCY
FREQUENCY
200
Cpk=3.7
Stdev=0.43
+3 Std
80
60
40
40
26
27
28
29
120
–3 Std
0
22
+3 Std
24
26
28
30
LSL=22.0, Nominal=26.0, USL=30.0
Figure 3. Normal Distribution of IIP3, ID, and Conversion Loss.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
6. Conversion Loss data has de-embed balun loss 0.8 dB @ 210 MHz.
3
90
+3 Std
–3 Std
60
30
ID
IIP3
LSL=22.0, Nominal=26.8
Cpk=3.67
Stdev=0.079
120
80
0
25
150
Cpk=1.5
Stdev=0.89
FREQUENCY
240
0
-6.4
-6.2
-6
-5.8
CONVERSION LOSS
LSL=-6.9, Nominal=-6.0
-5.6
-5.4
IAM-92516 Typical Performance
DC =5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified
-5
-5.2
30
31
29
29
-5.6
-5.8
28
-6
-6.2
-6.4
-6.6
Ids (mA)
27
IIP3 (dBm)
CONVERSION LOSS (dB)
-5.4
33
25
23
27
26
25
21
-6.8
-20°C
-40°C
+25°C
+85°C
-7
-7.2
-7.4
-20°C
-40°C
+25°C
+85°C
19
17
-7.6
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
24
22
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
15
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
LO POWER (dBm)
LO POWER (dBm)
Figure 4. Conversion Loss vs LO Power
Over Temperature.
Figure 5. IIP3 vs LO Power Over Temperature.
11
-20°C
-40°C
+25°C
+85°C
23
Figure 6. Ids vs LO Power Over Temperature.
-52
31
-20°C
-40°C
+25°C
+85°C
29
8
7
6
-20°C
-40°C
+25°C
+85°C
5
SSB NOISE FIGURE (dB)
P1dB (dBm)
9
25
23
21
19
17
15
13
-56
-58
-60
-62
-64
9
7
5
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
LO POWER (dBm)
Notes:
7. Typical performance plots are based on test
board shown at Figure 1 with matching circuit
stated at Figure 2.
8. Operating temperature range of Mini-circuit
RF transformer (model: TCM4-6T) is - 200C to
85 0C.
9. Conversion loss, P1dB and NF plots have deembedded balun loss 0.8 dB @ 210 MHz.
-54
11
4
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
Figure 7. P1dB vs LO Power Over Temperature.
4
-20°C
-40°C
+25°C
+85°C
27
ISOLATION LO-IF (dB)
10
Figure 8. SSB NF vs LO Power Over
Temperature.
-66
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
Figure 9. LO-IF Isolation vs LO Power Over
Temperature.
IAM-92516 Typical Performance, continued
DC = 5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified
-24
-28
ISOLATION RF-IF (dB)
ISOLATION LO-RF (dB)
-26
-30
-32
-34
-36
-38
-20°C
-40°C
+25°C
+85°C
-40
-42
-44
-30
0
-31
-2
-32
-4
-33
-34
-35
-36
-37
-20°C
-40°C
+25°C
+85°C
-38
-39
-46
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
-40
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
LO POWER (dBm)
0
0
-2
-4
IF RETURN LOSS (dB)
LO RETURN LOSS (dB)
-5
-10
-15
-20
-6
-8
-10
-12
-14
-16
-18
-20
-25
-22
-24
-30
0 0.5
1 1.5 2
2.5 3 3.5 4 4.5 5 5.5 6
50 100 150 200 250 300 350 400 450 500
FREQUENCY (GHz)
FREQUENCY (MHz)
Figure 13. LO Return Loss vs Frequency.
Figure 14. IF Return Loss vs Frequency.
RF Harmonics (mRF)
LO Harmonics (nLO)
0
1
2
3
4
5
0
—
0
18.5
12.9
11.6
5.8
1
19.5
0
51.3
60.6
42.8
55.2
2
39.9
67.3
56.6
78.3
64.7
87.2
3
51.2
>90
>90
>90
>90
>90
4
68.9
>90
>90
>90
>90
>90
5
>90
>90
>90
>90
>90
>90
Harmonic Intermodulation Suppression[10 ]
Note:
10. Test Conditions of Harmonic Intermodulation Suppression:
a) RF =1.91 GHz @-10 dBm and LO =1.7 GHz @-3 dBm.
b) RF harmonics and intermodulation products are referenced to a desired signal produced by
frequency IF = 210 MHz.
c) LO Harmonics are referenced to the -3 dBm LO drive signal.
5
-6
-8
-10
-12
-14
-16
-18
-20
0 0.5
1 1.5 2
2.5 3 3.5 4 4.5 5 5.5 6
FREQUENCY (GHz)
Figure 11. RF-IF Isolation vs LO Power Over
Temperature.
Figure 10. LO-RF Isolation vs LO Power Over
Temperature.
RF RETURN LOSS (dB)
-22
Figure 12. RF Return Loss vs Frequency.
PCB Layout and Stencil Design
Refer to Agilent’s web site
www.agilent.com/view/rf
Ordering Information
Part Number
Devices per Container
Container
IAM-92516-TR1
1000
7" reel
IAM-92516-TR2
5000
13" reel
IAM-92516-BLK
100
antistatic bag
LPCC 3x3 Package Dimensions
D2
D
D
2
D2
2
INDEX AREA
(D/2 X E/2)
k
e
E2
2
E
2
E2
E
e
2
Bottom View
Top View
PACKAGE
A
A3
A1
SEATING PLANE
Side View
REF.
A
D
D2
E
E2
e
A1
A3
k
1GL 3X3-0.50
MIN.
0.80
2.90
1.70
2.90
1.70
0
NOM.
0.90
3.00
1.80
3.00
1.80
0.50 BSC.
0.02
0.20 REF.
0.20
DIMENSIONS ARE IN MILLIMETERS
6
MAX.
1.00
3.10
1.90
3.10
1.90
0.05
Device Orientation
REEL
CARRIER
TAPE
USER
FEED
DIRECTION
M3X
M3X
M3X
COVER TAPE
Tape Dimensions
2.0±0.1[1]
0.3±0.05
4.0±0.1[2]
1.75±0.1
∅1.55±0.05
5.5±0.1[1]
CL
∅1.6±0.1
3.3±0.1
12.0±0.3
R 0.3
Typical
1.55±0.1
8.0±0.1
Notes:
1. Measured from centerline of sprocket hole to centerline of pocket
2. Cumulative tolerance of 10 sprocket holes is ±0.20
3. Other material available
4. All dimensions in millimeter unless otherwise stated
7
3.3±0.1
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
November 1, 2004
5989-0975EN