LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . FEATURE 3 ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @ I c = - 1 0 0 m A , I B = - 1 0 m A ) 1 ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●We declare that the material of product compliance with RoHS requirements. 2 SOT–23 APPLICATION For Hybrid IC,small type machine low frequency voltage amplify application. MAXIMUM RATINGS（Ta=25℃） Symbol Ratings Unit VCBO Collector to Base voltage Parameter -50 V VCEO Collector to Emitter voltage -50 V VEBO -6 V Collector current -200 mA Pc Collector dissipation 200 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ I Emitter to Base voltage O ORDERING INFORMATION Device Marking Shipping L2SA1235FLT1G A5F 3000/Tape & Reel L2SA1235FLT3G A5F 10000/Tape & Reel ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol C to E break down voltage V(BR)CEO Limits Test conditions I C=-100μA ,R BE =∞ Typ Max -50 - - Unit V Collector cut off current ICBO V CB - - -0.1 μA Emitter cut off current IEBO V EB=-6V, I C=0mA - - -0.1 μA DC forward current gain hFE V CE =-6V, I C=-1mA 150 - 800 hFE V CE =-6V, I C=-0.1mA DC forward current gain =-50V, I E=0mA Min ※ 90 - - I C=-100mA ,IB=-10mA - - -0.3 V fT V CE - 200 - MHz Collector output capacitance Cob V CB - 4 - pF Noise figure NF V CE=-6V, I E=0.3mA,f=100Hz,RG=10kΩ - - 20 dB C to E Saturation Vlotage VCE(sat) Gain bandwidth product =-6V, I E=10mA =-6V, I E=0,f=1MHz ※） It shows hFE classification in below table. Item ｈＦＥ Item Ｅ Ｆ Ｇ 150～300 250～500 400～800 Rev.O 1/3 LESHAN RADIO COMPANY, LTD. L2SA1235FLT1G COMMON EMITTER OUTPUT -50 COMMON EMITTER TRANSFER -50 0.18mA Ta=25℃ 0.14mA -40 0.12mA 0.10mA -30 0.08mA 0.06mA -20 0.04mA -10 Ta=25℃ VCE=-6V -40 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 0.16mA -30 -20 -10 0.02mA IB=0 -0 -0 -0 -1 -2 -3 -4 -5 -0.0 -0.2 10000 -0.8 -1.0 250 Ta=25℃ VCE=-6V 100(@IC=-1mA) Ta=25℃ VCE=-6V GAIN BAND WIDTH PRODUCT fT(MHz) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE -0.6 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 100 10 200 150 100 50 0 1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) 0.1 -1000 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 1 10 EMITTER CURRENT IE(mA) 100 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 100 250 Ta=25℃ IE=0 f=1MHz COLLECTOR DISSIPATION Pc (mW) COLLECTOR OUTPUT CAPACITANCE Cob(pF) -0.4 BASE TO EMITTER VOLTAGE VBE(V) COLLECTOR EMITTER VOLTAGE VCE(V) 200 10 150 100 1 50 0 0 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150 -100 Rev.O 2/3 LESHAN RADIO COMPANY, LTD. L2SA1235FLT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3