DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device 1 2 Shipping Marking L2SC3356WT1G 24 3000/Tape & Reel L2SC3356WT3G 24 10000/Tape & Reel SC-70 FEATURES • We declare that the material of product compliance with RoHS requirements. • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg to +150 C 65 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0 DC Current Gain hFE 82 170 Gain Bandwidth Product fT 7 Feed-Back Capacitance Cre** 0.55 S21e2 11.5 NF 1.1 Insertion Power Gain Noise Figure * SYMBOL 270 VCE = 3 V, IC = 10 mA GHz 1.0 2.0 VCE = 10 V, IC = 20 mA pF VCB = 10 V, IE = 0, f = 1.0 MHz dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Pulse Measurement PW 350 s, Duty Cycle 2 % * The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SC3356WT1G TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 50 0 100 f = 1.0 MHz 1 0.5 0.3 0 150 0.5 1 2 5 10 TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 20 30 15 VCE = 10 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW 2 Free Air 100 50 20 10 5 VCE = 10 V f = 1.0 GHz 10 0.5 1 5 10 0 0.5 50 1 5 10 50 70 IC-Collector Current-mA IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gmax 5.0 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-MHz 10 3.0 2.0 1.0 0.5 0.3 20 |S21e|2 10 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 IC-Collector Current-mA 30 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L2SC3356WT1G NOISE FIGURE vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB 6 NF-Noise Figure-dB 18 VCE = 10 V f = 1.0 GHz 5 4 3 2 15 12 6 3 NF-Noise Figure-dB 7 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| 3 2 NF 1 1 0 0.5 1 5 10 IC-Collector Current-mA 50 70 0 0 2 4 6 8 10 VCE-Collector to Emitter Voltage-V Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SC3356WT1G SC-70 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches Rev.O 4/4