LESHAN RADIO COMPANY, LTD. SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY LRB731XNRT1G 6 5 4 FEATURES 1 • Small Power Mold Type 2 3 • Low Forward Voltage — 0.37 Volts (Typ) @ IF = 1mAdc SC-88 • High Reliability • We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LRB731XNRT1G D3P 3000/Tape&Reel LRB731XNRT3G D3P 10000/Tape&Reel TOP VIEW MAXIMUM RATINGS (Ta = 25°C ) Rating Symbol Value Unit Reverse Voltage (repet it iv e peak) VRM 40 Volts Reverse Voltage(DC) VR 40 Volts Average Rectified Forward Current IO 30 mA Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Tstg – 40 to +125 °C Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit 0.37 Volts Forward Voltage (IF = 1.0 mAdc) VF — — Reverse Leakage (VR = 10 V) IR — — 1 µAdc Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 2 — pF Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB731XNRT1G Electrical Characteristic Curves Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.01 0.001 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT:IR(nA) 290 0 5 280 270 260 0.7 0.6 0.5 0.4 0.3 AVE:0.083nA 0.2 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 10 AVE:7.30A 35 6 5 4 3 2 1 0 AVE:2.52pF Ct DISPERSION MAP 10 Ifsm 8.3ms 8.3ms 1cyc 10 5 30 Ta=25℃ f=1MHz VR=0V n=10pcs 7 0 15 8.3ms 25 8 0.1 20 Ifsm 20 9 IR DISPERSION MAP 15 15 10 VF DIPERSION MAP 20 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=10V n=30pcs 0.8 250 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 0 1 IFSM DISPERSION MAP 1000 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.03 D=1/2 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 0.1 30 1 0.9 Ta=25℃ IF=1mA n=30pcs AVE:267.4mV TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 20 1 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 FORWARD VOLTAGE:VF(mV) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 f=1MHz Ta=125℃ 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 Sin(θ＝180) 0.02 DC 0.01 0.002 DC 0.001 Sin(θ＝180) 300us 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB731XNRT1G 0.1 Per chip 0.08 0.06 0A 0V Io t DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.04 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io( A) 0.1 Per chip 0.08 0.06 DC 0.04 D=1/2 0.02 Sin(θ＝180) 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB731XNRT1G SC-88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Rev.O 4/4