LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplications Low current rectification zFeatures LRB751CS- 40T5G Extremelysmall surface mounting type. (SOD923) Low VF High reliability. We declare that the material of product compliance with RoHS requirements. 1 2 SOD-923 zConstruction Silicon epitaxial planar 1 Cathode DEVICE MARKING AND ORDERING INFORMATION Device LRB751CS-40T5G Marking 2 Anode Shipping 5 8000/Tape&Reel zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 40 30 30 200 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Min. - Typ. Ct - 2 Max. 0.37 0.5 Unit V µA - pF Conditions IF=1mA VR=30V VR=1V , f=1MHz Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB751CS- 40T5G zElectrical characteristic curves 100 100000 10 Ta=125℃ Ta=125℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 0.001 100 200 300 400 500 600 700 800 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 40 320 300 290 AVE:304.2mV 800 600 500 400 300 AVE:111.0nA 5 4 3 2 1 0 AVE:1.81pF Ct DISPERSION MAP 10 1cyc Ifsm 8.3ms 10 AVE:3.40A 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 30 15 15 10 AVE:11.7ns 5 Ifsm 8 8.3ms 8.3ms 1cyc 6 4 2 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP t 6 4 2 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 Rth(j-a) 0.04 Rth(j-c) 100 Mounted on epoxy board IF=100mA IM=10mA 1ms FORWARD POWER DISSIPATION:Pf(W) Ifsm 8 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.05 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 30 6 IR DISPERSION MAP 20 25 Ta=25℃ f=1MHz VR=0V n=10pcs 7 0 VF DISPERSION MAP 20 8 100 280 15 9 700 200 10 10 Ta=25℃ VR=30V n=30pcs 900 310 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 5 1000 330 1 0.1 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=75℃ 10 0.03 D=1/2 Sin(θ＝180) 0.02 DC 0.01 time 300us 10 0.001 0 0.1 TIME:t(ms) 10 Rth-t CHARACTERISTICS 1000 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.05 Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB751CS- 40T5G Electricalcharacteristiccurves(Ta=25OC) 0.1 0.002 D=1/2 DC 0.001 Sin(θ＝180) 0.1 Io 0A 0V 0.08 t T 0.06 VR D=t/T VR=20V Tj=125℃ DC 0.04 D=1/2 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POW ER DISSIPATION:PR (W) 0.003 0A 0V 0.08 0.06 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 t T DC D=1/2 0.04 0.02 Sin(θ＝180) 0 Io VR D=t/T VR=20V Tj=125℃ Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 125 Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB751CS- 40T5G SOD -923 D −X− −Y− E 1 b 2 2X 0.08 (0.0032) X Y A c DIM A b c D E HE L MILLIMETERS MIN NOM MAX 0.34 0.39 0.43 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.017 0.010 0.007 0.033 0.026 0.041 0.006 L HE Rev.O 4/4