APT150DL60B2(G) 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr) • Soft Switching - High Qrr • Popular TO-247 Package or Surface Mount D3PAK Package • Low Noise Switching - Reduced Ringing • Ultra Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Minimizes or eliminates snubber • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge (B2) T-M ax ® 1 2 2 1 1 - Cathode 2 - Anode Back of Case - Cathode All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions Ratings Unit 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current IF(RMS) RMS Forward Currrent (Square wave, 50% duty) 450 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 600 IFSM TJ, TSTG TL 1 150 (TC = 112°C, Duty Cycle = 0.5) Operating and Storage Junction Temperature Range Amps -55 to 175 °C Lead Temperature for 10 Seconds 300 STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Min Typ Max IF = 150A 1.25 1.6 IF = 300A 2.0 IF = 150A, TJ = 125°C 1.25 Volts VR = 600V 25 VR = 600V, TJ = 125°C 250 μA 139 Microsemi Website - http://www.microsemi.com Unit pF 052-6319 Rev B 12 - 2008 Symbol APT150DL60B2(G) DYNAMIC CHARACTERISTICS Symbol Characteristic / Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Min Typ IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit 51 ns 408 IF = 150A, diF/dt = -200A/μs VR = 400V, TC = 25°C Reverse Recovery Time IF = 150A, diF/dt = -200A/μs VR = 400V, TC = 125°C 2387 nC 13 Amps 639 ns 7253 nC Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current 21 Amps trr Reverse Recovery Time 299 ns Qrr Reverse Recovery Charge 12075 nC IRRM Maximum Reverse Recovery Current 68 Amps IF = 150A, diF/dt = -1000A/ μs VR = 400V, TC = 125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Min Typ Max Unit 0.26 °C/W 0.22 oz 5.9 g Package Weight Torque 10 lb·in 1.1 N·m Maximum Mounting Torque 1 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.20 0.15 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 t1 t2 0.05 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10 10 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -3 10-4 -2 052-6319 Rev B 12 - 2008 TJ (°C) TC (°C) 0.099 Dissipated Power (Watts) 0.0160 0.160 0.380 ZEXT 10-5 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL APT150DL60B2(G) TYPICAL PERFORMANCE CURVES 400 700 TJ= 125°C 200 150 100 50 0 14000 Qrr, REVERSE RECOVERY CHARGE (nC) TJ= 150°C TJ= 25°C 250 trr, COLLECTOR CURRENT (A) 300 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage T = 125°C J V = 400V 150A R 12000 75A 10000 8000 6000 4000 2000 300A 0 R 75A 500 400 300 200 100 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 80 T = 125°C J V = 400V R 150A 60 75A 40 20 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 200 1.0 150 tRR 0.8 IRRM IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 T = 125°C J V = 400V 150A 600 TJ= 55°C IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 350 0.6 QRR 100 0.4 50 0.2 Duty cycle = 0.5 TJ = 45°C 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 1200 1000 800 600 400 200 0 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6319 Rev B 12 - 2008 CJ, JUNCTION CAPACITANCE (pF) TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1400 APT150DL60B2(G) Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 3 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM Slope = diM/dt Figure 10, Diode Reverse Recovery Waveform and Definitions T-MAX® [B2] Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Cathode 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 052-6319 Rev B 12 - 2008 1.01 (.040) 1.40 (.055) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.