BT131 Series Triacs GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDRM IT(RMS) ITSM BT131Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current PIN CONFIGURATION 500 500 1 16 600 600 1 16 V A A SYMBOL DESCRIPTION 1 main terminal 2 2 gate 3 main terminal 1 T2 T1 G 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN. - full sine wave; Tlead ≤51 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -500 5001 UNIT -600 6001 V - 1 A - 16 17.6 1.28 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. http://www.luguang.cn mail:[email protected] BT131 Series Triacs THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-lead Thermal resistance junction to lead Thermal resistance junction to ambient full cycle half cycle pcb mounted;lead length = 4mm Rth j-a MIN. TYP. MAX. UNIT - 150 60 80 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 0.4 1.3 1.4 3.8 3 3 3 7 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ 0.2 - 1.2 4.0 1.0 2.5 1.3 1.2 0.7 0.3 0.1 5 8 5 8 5 1.5 1.5 0.5 mA mA mA mA mA V V V mA MIN. TYP. MAX. UNIT 5 15 - V/µs - 2 - µs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 2.0 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs tgt http://www.luguang.cn mail:[email protected] BT131 Series Triacs 1.4 BT132D Ptot / W Tmb(max) / C =180 1.2 53 120 1 1 IT(RMS) / A 41 0.8 77 60 0.6 51 C 1 65 90 0.8 BT132D 1.2 0.6 89 30 0.4 0.4 101 0.2 113 00 0 0.2 0.4 0.6 IT(RMS) / A 0.8 125 1.2 1 3 100 150 BT132D IT(RMS) / A 2.5 T time 2.0 Tj initial = 25 C max 100 1.5 dI T/dt limit 1 T2- G+ quadrant 0.5 100us 1ms T/s 10ms 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. ITSM / A 50 ITSM IT 20 0 Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. BT132D ITSM / A 10 10us 0 -50 Tlead / C Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0.2 0 0.01 1.6 I TSM T 15 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 51˚C. BT136 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 10 1 0.8 5 0.6 0 10 100 Number of cycles at 50Hz 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. http://www.luguang.cn 0.4 -50 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. mail:[email protected] BT131 Series Triacs 3 IGT(Tj) IGT(25 C) 2 BT131 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 BT134W IT / A 1.5 Vo = 1.0 V Rs = 0.21 Ohms 2 typ 1 1.5 max 1 0.5 0.5 0 0 -50 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 2.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. 100 TRIAC 0.5 BT134W Zth j-sp (K/W) 10 unidirectional 2 bidirectional 1 1.5 tp P D 1 0.1 0.5 t 0 -50 0 50 Tj / C 100 150 IH(Tj) IH(25C) 0.1ms 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.01 10us Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. 1000 TRIAC dVD/dt (V/us) 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. http://www.luguang.cn 1 0 50 100 150 Tj / C Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. mail:[email protected] BT131 Series Triacs MECHANICAL DATA Dimensions in mm 2.54 Net Mass: 0.2 g 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 12.7 min 321 0.48 0.40 0.40 min Fig.13. TO92 ; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". http://www.luguang.cn mail:[email protected]