MBRF1035 - MBRF10150 Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO - 220AC 4.5± 0.2 Features 2 φ 3 .2± 0.2 φ 3.3± 0.1 8.2± 0.2 16.5± 0.3 PIN 1 4.0± 0.3 2.6± 0.2 1.4± 0.1 Mechanical Data 3.1+0.2 -0.1 15.2± 0.5 Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case 13.5± 0.5 10.2± 0.2 0.6± 0.1 Cases: JEDEC TO-220AC molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams 0.6± 0.1 5.0± 0.1 Dimensions in millimeters Maximum Ratings and Electrical Characteristics o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF MBRF MBRF Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Tc=125oC Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=125oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: o (Note 2) IF=10A, TC=25 C o IF=10A, TC=125 C IF=20A, TC=25oC o IF=20A, TC=125 C Maximum Instantaneous Reverse Current o @ Tc =25 C at Rated DC Blocking Voltage o (Note 2) @ Tc=125 C VRRM VRMS VDC I(AV) 1045 1050 35 24 35 45 31 45 50 35 50 60 42 60 10 IRRM VF Units 150 105 150 V V V A A A 1.0 0.5 0.70 0.57 0.84 0.72 0.80 0.70 0.95 0.85 0.1 15 RθJC 100 70 100 150 IR dV/dt 90 63 90 32 IFSM Typical Junction Capacitance Maximum Typical Thermal Resistance(Note 3) Cj TJ 10 10,000 500 3.0 -65 to +150 -65 to +175 A 1.05 － － － 0.85 0.71 － － 0.1 6.0 V mA mA V/uS pF o C/W o C o C TSTG 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. Storage Temperature Range Notes: MBRF MBRF MBRF MBRF 1060 1090 10100 10150 IFRM Voltage Rate of Change (Rated VR) Operating Junction Temperature Range 1035 - 112 - http://www.luguang.cn mail:[email protected] MBRF1035 - MBRF10150 FIG.1- FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 10 8 6 4 MBRF1035-MBRF1045 MBRF1050-MBRF10150 2 0 150 125 100 75 50 25 0 50 100 o CASE TEMPERATURE. ( C) 150 0.1 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1 10 NUMBER OF CYCLES AT 60Hz 100 FIG.4- TYPICAL REVERSE CHARACTERISTICS 50 40 Tj=125 0C 10 INSTANTANEOUS REVERSE CURRENT. (mA) 10 INSTANTANEOUS FORWARD CURRENT. (A) FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 12 Pulse Width=300 s 1% Duty Cycle 1 Tj=25 0C 0.1 MBRF1035-MBRF1045 MBRF1050-MBRF1060 MBRF1090-MBRF10150 Tj=125 0C 1 Tj=75 0C 0.1 0.01 Tj=25 0C MBRF1035-MBRF1045 MBRF1050-MBRF10150 0.01 0 0.001 0 0.1 0.2 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE. (V) 0.4 FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) Tj=25 0C f=1.0MHz Vsig=50mVp-p 500 100 0.1 MBRF1035-MBRF1045 MBRF1050-MBRF1060 MBRF1090-MBRF10150 1.0 10 REVERSE VOLTAGE. (V) http://www.luguang.cn 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 5,000 1,000 20 100 100 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10 1 0.1 0.01 0.1 1 10 T, PULSE DURATION. (sec) mail:[email protected] 100