LUGUANG SOD-723

SOD-723 Plastic-Encapsulate Diodes
CESD3V3D7
SOD-723
ESD Protection Diodes
+
DESCRIPTION
The CESD3V3D7 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
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FEATURES
z Stand−off Voltage: 3.3 V−12 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) per Human Body Model
z IEC61000−4−2 Level 4 ESD Protection
z These are Pb−Free Devices
Maximum Ratings @TA=25℃
Parameter
Symbol
IEC61000−4−2(ESD)
ESD voltage
Air
Contact
±30
±30
per human body model
Per machine model
Total power dissipation on FR-5 board (Note 1)
Thermal Resistance Junction−to−Ambient
KV
KV
400
V
PD
100
mW
RΘJA
1250
℃/W
TL
260
℃
Tj, Tstg
-55 ~ +150
℃
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
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Unit
16
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage temperature range
Limits
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
IR (μA)
Device
VRWM (V)
@ VRWM
Device*
VBR (V)
VC (V) @Max
@ IT(Note 2)
IT
IPP(A) +
Ppk + (W)
C (pF)
IPP+
Marking
Max
Max
Min
Max
mA
Max
Max
Max
Typ
CESD3V3D7
E0
3.3
2.5
5.0
5.9
1.0
10.4
11.9
113
80
CESD5V0D7
E2
5.0
1.0
6.2
7.3
1.0
8.8
13.3
117
65
CESD12VD7
E3
12
1.0
13.5
15.6
1.0
5.4
23.7
128
30
*Other voltages available upon request.
+Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
TYPICAL CHARACTERISTICS
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