DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1706 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 applications of notebook computers. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) 0.05 MIN. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 4.4 5.37 MAX. 0.8 +0.10 –0.05 RDS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A) • Low Ciss : Ciss = 3000 pF (TYP.) 6.0 ±0.3 4 0.15 1.8 MAX. RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A) 1.44 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1706G Power SOP8 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected) Drain to Source Voltage Note1 VDSS 30 V VGSS ±20 V ID(DC) ±13 A ID(pulse) ±52 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Gate to Source Voltage Note2 Drain Current (DC) Drain Current (pulse) Note3 Total Power Dissipation (TA = 25°C) Note4 Drain Body Diode Gate Gate Protection Diode Source Notes 1. VGS = 0 V 2. VDS = 0 V 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 4. Mounted on ceramic substrate of 1200 mm x 0.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. G13083EJ1V0DS00 (1st edition) Date Published January 1999 NS CP(K) Printed in Japan © 1998 µ PA1706 ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 7.0 A 5.8 7.8 mΩ RDS(on)2 VGS = 4.5 V, ID = 7.0 A 7.0 10.0 mΩ RDS(on)3 VGS = 4.0 V, ID = 7.0 A 8.0 12.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 7.0 A 10 22 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 3000 pF Output Capacitance Coss VGS = 0 V 950 pF Reverse Transfer Capacitance Crss f = 1 MHz 380 pF Turn-on Delay Time td(on) ID = 7.0 A 40 ns VGS(on) = 10 V 220 ns td(off) VDD = 15 V 140 ns tf RG = 10 Ω 90 ns Total Gate Charge QG ID = 13 A 56 nC Gate to Source Charge QGS VDD = 24 V 9 nC Gate to Drain Charge QGD VGS = 10 V 14 nC VF(S-D) IF = 13 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 13 A, VGS = 0 V 43 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 50 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff Data Sheet G13083EJ1V0DS00 µ PA1706 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 Mounted on ceramic substrate of 1200mm 2 × 0.7mm 2.4 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 20 TA - Ambient Temperature - ˚C 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 d ite ) Lim 0 V =1 GS V ID(pulse) = 52 A n) (o 1 m Remark Mounted on ceramic substrate of 1200mm × 2 s (@ 10 ID(DC) = 13 A 0.7mm m s 10 10 0 m s Po we rD 1 D iss S ipa tio n Lim ite d TA = 25 ˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A R DS 100 Rth(ch-a) = 62.5˚C/W 10 1 0.1 Mounted on ceramic substrate of 1200mm2 × 0.7mm Single Pulse Channel to Ambient 0.01 0.001 100 µ 1m 10 m 100 m 1 10 100 1 000 10 000 PW - Pulse Width - s Data Sheet G13083EJ1V0DS00 3 µ PA1706 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed Pulsed VGS = 10 V 4.5 V 50 ID - Drain Current - A ID - Drain Current - A 4.0 V TA = 125˚C 75˚C 25˚C -25˚C 10 1 30 20 10 0.1 0.01 40 VDS = 10 V 0 1 3 2 0 4 TA = −25˚C 25˚C 75˚C 125˚C 10 1 10 1 0.1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 Pulsed 20 15 10 VGS = 4.0 V 4.5 V 10 V 5 0 1 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 10 0 ID = 7.0 A 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V 100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S VDS =10 V Pulsed RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.8 0.6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 1000 0.4 0.2 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.6 VDS = 10 V ID = 1 mA 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 -40 -20 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G13083EJ1V0DS00 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 16 VGS = 4.0 V 4.5 V 12 10 V 10 8 6 4 2 0 -40 -20 ID = 7.0 A 0 20 40 100 0V VGS =10 V 10 1 0.1 0 60 80 100 120 140 160 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Coss Crss 100 10 100 100 10 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Diode - ns di/dt = 100A/µs VGS = 0 V 1 1.0 1.2 1.4 td(off) tf 100 td(on) 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 0.8 tr VDS - Drain to Source Voltage - V 1 000 0.6 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz 1 0.4 SWITCHING CHARACTERISTICS Ciss 10 0.1 0.2 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 10000 Pulsed DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 13 A 30 VDD = 24 V 15 V 6V 12 10 VGS 20 8 6 4 10 2 VDS 0 20 40 60 80 VGS - Gate to Source Voltage - V 14 1000 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1706 0 100 QG - Gate Charge - nC ID - Drain Current - A Data Sheet G13083EJ1V0DS00 5 µ PA1706 [MEMO] 6 Data Sheet G13083EJ1V0DS00 µ PA1706 [MEMO] Data Sheet G13083EJ1V0DS00 7 µ PA1706 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5