NEC UPA901TU-A

DATA SHEET
NEC's NPN SiGe RF IC UPA901TU
IN A 8-PIN LEAD-LESS MINIMOLD
FEATURES
DESCRIPTION
•
OUTPUT POWER:
Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
NEC's UPA901TU is a silicon germanium HBT IC designed
•
LOW POWER:
IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
5.8 GHz applications. This IC consists of two stage amplifiers
•
SINGLE POWER SUPPLY OPERATION:
VCE = 3.6 V
•
BUILT-IN BIAS CIRCUIT
•
8-PIN LEAD-LESS MINIMOLD:
(2.0 × 2.2 × 0.5 mm)
for the power amplifier of 5.8 GHz cordless phone and other
and has excellent performance, high efficiency, high gain,
low power consumption.
NEC's UPA901TU is packaged in surface mount 8-pin leadless minimold plastic package.
This device is fabricated with our SiGe HBT process UHS2HV technology.
APPLICATIONS
• 5.8 GHz Cordless Phones
• 5.8 GHz Band DSRC (Dedicated Short Range
Communication) System
• 5 GHz Band Video Transmitter
ORDERING INFORMATION
PART NUMBER
ORDER NUMBER
QUANTITY
PACKAGE
MARKING
UPA901TU
UPA901TU-A
50 pcs (Non reel)
A901
UPA901TU-T3-A
5 kpcs/reel
8-pin lead-less
minimold( Pb-Free)
UPA901TU-T3
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 1, Pin 8 face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
California Eastern Laboratories
UPA901TU
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(B1)
(E)
(N.C.)
(C2)
4
3
2
1
Q2
Bias
Circuit
Q1
5
6
7
8
(C1)
(E)
(B2)
(Bias)
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
4.5
V
Emitter to Base Voltage
VEBO
2
V
Collector Current of Q1
IC1
75
mA
IC2
250
mA
IBIAS
25
mA
410
mW
Collector Current of Q2
Bias Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4)
THERMAL RESISTANCE (TA =+25ºC)
PARAMETER
Channel to Ambient Resistance
SYMBOL
Rth (j-a1)
TEST CONDITIONS
RATINGS
UNIT
150
°C/W
TBD
°C/W
Note
Rth (j-a2)
Free Air
Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4)
RECOMMENDED OPERATING RANGE (All Parameters)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector to Emitter Voltage
VCE
−
3.6
4.5
V
Total Current
Itotal
−
90
300
mA
Input Power
Pin
−
−3
+5
dBm
UPA901TU
ELECTRICAL CHARACTERISTICS (TA = +25°C)
-DC CHARACTERISTICS(1) Q1
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
60
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
120
nA
VCE = 3 V, IC = 6 mA
80
120
160
−
VCE = 3.6 V, VBE = VBIAS = 0.865 V
2
4.5
9
−
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE
Current Ratio (IC (set) 1/IBIAS)
Note
CR1
(2) Q2
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
400
nA
VCE = 3 V, IC = 20 mA
80
120
160
−
VCE = 3.6 V, VBE = VBIAS = 0.865 V
8
10
13
−
MIN.
TYP.
MAX.
UNIT
−
4
−
mA
DC Current Gain
hFE
Current Ratio (IC (set) 2/IBIAS)
Note
CR2
(3) Bias Circuit
PARAMETER
SYMBOL
Bias Circuit Current
IBIAS
TEST CONDITIONS
VBIAS = 0.865 V
Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
IBIAS, IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT
IC (set) 2
(B1)
4
(N.C.)
2
(E)
3
(C2)
1
VBE
(B1)
4
(E)
3
(N.C.)
2
5
(C1)
Bias
Circuit
6
(E)
7
(B2)
(N.C.)
2
(E)
3
8
(Bias)
5
(C1)
6
(E)
7
(B2)
(C2)
1
VCE
Q2
Bias
Circuit
Q1
IBIAS
VBIAS
IBIAS
(B1)
4
Q2
Q2
Q1
(C2)
1
8
(Bias)
IC (set) 1
VCE
Bias
Circuit
Q1
5
(C1)
6
(E)
7
(B2)
8
(Bias)
VBE
IC (set) 1
IC (set) 2
IC (set) 1 = CR1× IBIAS
= 4.5 × IBIAS (TYP.)
IC (set) 2 = CR2 × IBIAS
= 4.5 × IBIAS (TYP.)
The application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU
ELECTRICAL CHARACTERISTICS (TA = +25°C)
-RF CHARACTERISTICS(1) Q1
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Insertion Power Gain (Q1)
PARAMETER
| S21e |2
VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz
8.5
10.0
11.5
dB
Maximum Available Power Gain (Q1)
MAG1
VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz
13.5
15.0
−
dB
Output Power (Q1)
Pout1
VCE = 3.6 V, IC (set) = 12 mA,
f = 5.8 GHz, Pin = −3 dBm
10.2
11.2
−
dBm
Collector Current (Q1)
ICC1
VCE = 3.6 V, IC (set) = 12 mA,
f = 5.8 GHz, Pin = −3 dBm
−
20
−
mA
(2) Q2
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Insertion Power Gain (Q2)
2
| S21e |
VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz
2
3.5
5
dB
Maximum Available Power Gain (Q2)
MAG2
VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz
8.5
10.0
10.5
dB
Output Power (Q2)
Pout2
VCE = 3.6 V, IC (set) = 40 mA,
f = 5.8 GHz, Pin = 11 dBm
17.5
19.0
−
dBm
Collector Current (Q2)
ICC2
VCE = 3.6 V, IC (set) = 40 mA,
f = 5.8 GHz, Pin = 11 dBm
−
70
−
mA
(3) Q1 + Q2, 2 stage Amplifiers
MIN.
TYP.
MAX.
UNIT
Output Power (Q1 + Q2)
PARAMETER
SYMBOL
Pout
VCE = 3.6 V, RBIAS = 680 Ω,
f = 5.8 GHz, Pin = −3 dBm
Note
17.5
19.0
−
dBm
Total Current (Q1 + Q2)
Itotal
VCE = 3.6 V, RBIAS = 680 Ω,
f = 5.8 GHz, Pin = −3 dBm
Note
−
90
−
mA
Note by MEASUREMENT CIRCUIT 1
TEST CONDITIONS
UPA901TU
MEASUREMENT CIRCUIT 1
RFin
C1
C4
C2
0.75 pF 0.5 pF
100 nH
1.0 pF
0.5 pF
L1
(B1)
4
(N.C.)
2
(E)
3
5.6 nH
L2
R4
10 Ω
6
(E)
5
(C1)
C6
Bias
Circuit
Q1
10 Ω
7
(B2)
1.0 pF
C3
Q2
C9
R3
(C2)
1
RFout
1.0 pF
C10
10 nF
8
(Bias)
C5
0.75 pF
5.6 nH
L3
12 nH
L4
R5
10 Ω
C5
10 nF
IBIAS
C8
1.0 pF
C7
1.0 pF
R2
10 Ω
R1
IC2, IC (set) 2
680 Ω
IC1, IC (set) 1
Itotal
VCE
IC (set) 1 = CR1 × IBIAS
= 4.5 × IBIAS (TYP.)
IC (set) 2 = CR2 × IBIAS
= 4.5 × IBIAS (TYP.)
The application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
R4
C9
R3 C6
L2
L1
C3
L3
C4
A901
C1 C2
C5 L4
C8
RFin
C10
R5
C11
RFout
C7
R2
R1
R : 1005 Chip resistor
L : 1005 Chip inductor
C : 1005 Chip cunductor
The dotted line are connected
with the back of substrate
VCC
GND
Remarks
1. Substrate : 20 × 20 × 0.8 (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper
thickness 18 µm, gold flash plating
2. Back side : GND pattern
3. o : Through hole
USING THE NEC EVALUATION BOARD
SYMBOL
VALUES
SYMBOL
VALUES
R1
680 Ω
C2
0.5 pF
R2
10 Ω
C3
0.5 pF
R3
10 Ω
C4
1.0 pF
R4
10 Ω
C5
0.75 pF
R5
10 Ω
C6
1.0 pF
L1
100 nH
C7
1.0 pF
L2
5.6 nH
C8
1.0 pF
L3
5.6 nH
C9
1.0 pF
L4
12 nH
C10
10 nF
C1
0.75 pF
C11
10 nF
UPA901TU
TYPICAL CHARACTERISTICS (TA = +25°C , VCE = 3.6 V, RBIAS = 680 Ω, f = 5.8 GHz, unless otherwise specified)
OUTPUT POWER, TOTAL CURRENT,
vs. INPUT POWER
200
150
20
Pout
100
15
Itotal
50
10
η total
5
-15
Pout
20
160
18
4.2 V
3.8 V 120
3.6 V
3.3 V
2.8 V 80
16
14
Itotal
40
12
10
-10
0
5
0
22
VCE = 4.2 V
3.8 V 240
3.6 V
3.3 V
200
2.8 V
-6
-8
-4
-2
0
2
4
0
6
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, TOTAL CURRENT,
vs. INPUT POWER
BIAS CIRCUIT CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
22
280
f = 5.725 GHz
5.800 GHz
5.850 GHz
240
Pout
20
200
160
18
16
120
Itotal
14
80
12
40
10
-10
0
-8
-6
-4
15
-2
0
2
4
6
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Bias Circuit Current IBIAS (mA)
24
Output Power Pout (dBm)
-5
-10
280
24
Output Power Pout (dBm)
Pout
x 100 (%)
VCE x Itotal
Total Current Itotal (mA)
Total Power Efficiency ηtotal (%)
η total =
Total Current Itotal (mA)
Output Power Pout (dBm)
25
RBIAS = 300 Ω
10
680 Ω
5
1000 Ω
0
0
2000 Ω
1
2
3
4
Collector to Emitter Voltage VCE (V)
5
Total Current Itotal (mA)
OUTPUT POWER, TOTAL CURRENT,
TOTAL POWER EFFICIENCY vs. INPUT POWER
UPA901TU
PACKAGE DIMENSIONS
8-PIN LEAD-LESS MINIMOLD (UNIT:mm)
(Top View)
(Bottom View)
(0.65) (0.65)
(0.6)
(0.3)
(0.6)
2
3
8
0.4±0.1
7
0.4±0.1
(0.6)
1
6
(0.35) (0.35)
5
5
(0.35)(0.35)
6
(0.5) (0.5)
7
A901
2.0±0.1
2.2±0.05
8
(1.4)
2.0±0.1
4
0.16±0.05
0.125+0.1
-0.05
0.5±0.03
(0.25) (0.25)
4
(0.75)
3
(0.75)
2
1
Remark ( ) : Reference value
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
02/15/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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