DATA SHEET DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2756TB MIXER+OSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER DESCRIPTION The µPC2756TB is a silicon monolithic integrated circuit designed as L band frequency downconverter for receiver stage of wireless systems. The IC consists of mixer and local oscillator. The TB suffix IC which is smaller package than conventional T suffix IC contributes to reduce your system size. The µPC2756TB is manufactured using NEC’s 20GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Wideband operation : fRFin = 0.1 GHz to 2.0 GHz, fIFout = 10 MHz to 300 MHz • High-density surface mounting : 6-pin super mini mold package • Low current consumption : ICC = 6.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.7 to 3.3 V • Suppressed spurious signals : Due to double balanced mixer • Equable output impedance : Single-end push-pull IF amplifier • Equable temperature-drift oscillator : Differential amplifier type oscillator APPLICATIONS • Data carrier up to 2.0 GHz MAX. • Wireless LAN up to 2.0 GHz MAX. ORDERING INFORMATION Part Number Marking Package µPC2756TB-E3 C1W 6-pin super minimold Remark Supplying Form Embossed tape 8mm wide. Pin1, 2, 3 face to tape perforation side. QTY 3kp/reel. To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC2756TB) Caution Electro-static sensitive devices. The information in this document is subject to change without notice. Document No. P12807EJ2V0DS00 (2nd edition) Date Published February 1999 N CP(K) Printed in Japan The mark shows major revised points © 1997 µPC2756TB PIN CONNECTIONS (Bottom View) 3 2 1 C1W (Top View) 4 4 3 5 5 2 6 6 1 Pin No. Pin Name 1 RFin 2 GND 3 LO1 4 LO2 5 VCC 6 IFout PRODUCT LINE-UP (TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω ) Items Part Number µPC2756T VCC ICC (V) (mA) 2.7 to 3.3 6.0 900 MHz 1.6 GHz 900 MHz 1.6 GHz CG CG NF NF (dB) (dB) (dB) (dB) 14 14 10 13 fRFin fIFout fOSC (GHz) (GHz) (GHz) Package 0.1 to 2.0 10 to 300 to 2.2 µPC2756TB 6-pin minimold 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. INTERNAL BLOCK DIAGRAM Mixer IF amplifier RF input IF output Oscillator Note Oscillator tank circuit must be externally attached to LO1 and LO2 pins. LO1 LO2 2 VCC GND Data Sheet P12807EJ2V0DS00 µPC2756TB µPC2756TB LOCATION EXAMPLE IN THE SYSTEM RX BPF µPC2756TB BPF 1st MIXER µPC2745TB PLL frequency synthesizer Reference osillator LPF VT This document is to be specified for µPC2756TB. For the other part number mentioned in this document, please refer to the data sheet of each part number. Data Sheet P12807EJ2V0DS00 3 µPC2756TB PIN EXPLANATION Pin No. Symbol Assignment Applied Voltage V Pin Voltage Note V 1 RFin RF input – 1.2 Function and Application This pin is RF input for mixer designed as double balance type. This circuit contributes to suppress spurious signal with minimum LO and bias power consumption. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. This pin must be externally coupled to front stage with capacitor for DC cut. 2 GND Ground 0 – Must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. (Track length should be kept as short as possible.) 3 LO1 Local oscillator base collector – 1.2 Local oscillator base collector – These pins are both base-collector of oscillator. This oscillator is designed as differential amplifier type. 3 pin and 4 pin should be externally equipped with tank resonator circuit in order to oscillate with feedback loop. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. Each pin must be externally coupled to tank circuit with capacitor for DC cut. 4 LO2 1.2 Equivalent Circuit 5 VCC Power supply 2.7 to 3.3 – Supply voltage 3.0 ± 0.3 V for operation. Must be connected bypass capacitor (e.g. 1 000 pF) to minimize ground impedance. 6 IF out IF output – 1.7 This pin is output from IF buffer amplifier designed as single-ended push-pull type. This pin is assigned for emitter follower output with low-impedance. This pin must be externally coupled to next stage with capacitor for DC cut. VCC 1 VCC 3 4 VCC 6 Note Pin voltage is measured at VCC = 3.0 V APPLICATION This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line. This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of RF input with external circuit (50 Ω termination or impedance matching). External circuits of the IC are explained in a following application note. • To RF and IF port : Application Note “Usage and Application Characteristics of µPC2757T, µPC2758T and µPC8112T, 3-V Power Supply, 1.9-GHz Frequency Down Converter ICs for Cellular/Cordless Telephone and Portable Wireless Communication” (Document No. P11997E) 4 Data Sheet P12807EJ2V0DS00 µPC2756TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Rating Unit Supply Voltage VCC TA = +25 °C 5.5 V Power Dissipation PD Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C) 200 mW Operating Ambient Temperature TA –40 to +85 °C Storage Temperature Tstg –55 to +150 °C RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA –40 +25 +85 °C ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω , Test circuit) Parameter Symbol Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signals 3.5 6.0 8.0 mA RF Frequency Response fRFin CG ≥ (CG1 –3 dB) fIFout = 150 MHz constant 0.1 – 2.0 GHz IF Frequency Response fIFout CG ≥ (CG1 –3 dB) fRFin = 0.9 GHz constant 10 – 300 MHz Conversion Gain 1 CG1 fRFin = 0.9 GHz, fIFout = 150 MHz PRFin = –40 dBm 11 14 17 dB Conversion Gain 2 CG2 fRFin = 1.6 GHz, fIFout = 20 MHz PRFin = –40 dBm 11 14 17 dB Single Sideband Noise Figure 1 NF1 fRFin = 0.9 GHz, fIFout = 150 MHz – 10 13 dB Single Sideband Noise Figure 2 NF2 fRFin = 1.6 GHz, fIFout = 20 MHz – 13 16 dB Maximum IF Output Level 1 PO (SAT) 1 fRFin = 0.9 GHz, fIFout = 150 MHz PRFin = –10 dBm –11 –8 – dBm Maximum IF Output Level 2 PO (SAT) 2 fRFin = 1.6 GHz, fIFout = 20 MHz PRFin = –10 dBm –15 –12 – dBm STANDARD CHARACTERISTICS FOR REFERENCE (Unless otherwise specified, TA = +25 °C, VCC = 3.0 V, ZL = ZS = 50 Ω ) Parameter Symbol Conditions Reference Unit Output 3rd Order Intercept Point OIP3 fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz, Cross point IP. +4.0 dBm –68 dBc/Hz –35 dB –23 dB 2.2 GHz Note Phase Noise PN fOSC = 1.9 GHz LO Leakage at RF Pin LOrf fLOin = 0.8 to 2.0 GHz LO Leakage at IF Pin LOif fLOin = 0.8 to 2.0 GHz Maximum Oscillating Frequency fOSCMAX. Note VaractorDi: 1SV210, L: 7 nH Note On application circuit example. Data Sheet P12807EJ2V0DS00 5 µPC2756TB SCHEMATIC SUPPLEMENT FOR RF, IF SPECIFICATIONS RF Frequency Response Conversion Gain CG (dB) fIF = 150 MHz PRFin = − 40 dBm CG1 CG1−3 dB Guaranteed gain level 0.1 0.9 2.0 RF Frequency fRF (GHz) IF Frequency Response Conversion Gain CG (dB) fRF = 0.9 GHz PRFin = − 40 dBm CG1 CG1−3 dB Guaranteed gain level 10 150 300 IF Frequency fIF (GHz) 6 Data Sheet P12807EJ2V0DS00 MIN. TYP. MAX. Unit CG1 11 14 17 dB CG1-3 dB 8 11 14 dB µPC2756TB TEST CIRCUIT (Top View) Signal Generator 1 000 pF 1 000 pF 3 C2 2 LO1 GND LO2 VCC C3 3 300 pF 5 Signal Generator 3V C4 1 000 pF 1 50 Ω 50 Ω 4 RFin IFout 6 3 300 pF C5 C1 50 Ω Spectram Analyzer ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD LO1 LO2 C 2 C3 GND RF input VCC C1 C5 COMPONENT LIST No. C4 IF output Notes Value C1 to C3 1 000 pF C4, C5 3 300 pF (1) 35 × 42 × 0.4 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) (5) : Through holes pattern should be removed on this testing. Data Sheet P12807EJ2V0DS00 7 µPC2756TB APPLICATION CIRCUIT EXAMPLE (Top View) VT bias 15 kΩ L R1 5 nH ∼ 30 nH C2 1 000 pF 15 kΩ R2 HVU12 C3 1 000 pF 3 LO1 LO2 4 2 GND VCC 5 Signal Generator 3V C4 1 000 pF 1 50 Ω 3 300 pF RFin IFout 6 3 300 pF C5 C1 50 Ω Spectram Analyzer ILLUSTRATION OF THE APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD R2 VT C3 C2 R1 GND RF input VCC C1 C4 C5 COMPONENT LIST IF output Notes No. Value C1 to C3 1 000 pF C4, C5 3 300 pF R1, R2 15 kΩ L 5 nH to 30 nH HVU12 (1) 35 × 42 × 0.4 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) (5) : Through holes pattern should be removed on this testing. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 8 Data Sheet P12807EJ2V0DS00 µPC2756TB TYPICAL CHARACTERISTICS (TA = +25 °C) − ON THE TEST CIRCUIT − CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 10 10 No input signal VCC = 3.0 V No input signal Circuit Current ICC (mA) Circuit Current ICC (mA) 8 6 4 2 0 2 1 3 4 5 8 6 4 2 0 −40 6 Single Side Band Noise Figure SSBNF (dB) CG VCC = 3.0 V VCC = 3.3 V VCC = 2.7 V 20 15 PRFin = –55 dBm PL0in = –10 dBm 10 fIF = 150 MHz (Low-Side LO) 5 0.5 NF 1.0 1.5 Conversion Gain CG (dB) 30 20 10 +40 25 20 15 10 5 0 2.0 1 2 IF OUTPUT LEVEL, IM3 vs. RF INPUT LEVEL fRF1 = 900 MHz fRF2 = 905 MHz fLO = 800 MHz VCC = 3.0 V −20 −30 −40 −50 −60 −70 −80 −60 −40 −20 10 20 50 100 300 0 IF OUTPUT LEVEL, IM3 vs. RF INPUT LEVEL IF Output Level PIFout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) −10 5 IF Output Frequency fIFout (MHz) +20 0 +100 VCC = 3.0 V PRFin = –55 dBm PL0in = –10 dBm fRF = 1.6 GHz IF coupling = 0.1 µ F RF Input Frequency fRFin (GHz) +10 +80 +60 CONVERSION GAIN vs. IF OUTPUT FREQUENCY CONVERSION GAIN, SSB NOISE FIGURE vs. RF INPUT FREQUENCY 15 +20 0 Operating Ambient Temperature TA (°C) 25 IF Output Level PIFout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) Conversion Gain CG (dB) Supply Voltage VCC (V) −20 +20 +10 0 −10 fRF1 = 2.0 GHz fRF2 = 2.005 GHz fLO = 1.9 GHz VCC = 3.0 V −20 −30 −40 −50 −60 −70 −80 RF Input Level PRFin (dBm) −60 −40 −20 0 RF Input Level PRFin (dBm) Data Sheet P12807EJ2V0DS00 9 µPC2756TB Local Leakage at IF Output Pin LOif (dBm) − ON THE APPLICATION CIRCUIT − LO LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY 0 −10 −20 −30 −40 −50 −60 0.8 VCC = 3.0 V PL0in = −10 dBm 1.0 1.2 1.4 1.6 Local Leakage at RF Pin LOrf (dBm) Local Input Frequency fLO (GHz) LO LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY 0 VCC = 3.0 V PL0in = -10 dBm −10 −20 −30 −40 −50 −60 1.4 1.6 1.8 Local Input Frequency fLO (GHz) 10 Data Sheet P12807EJ2V0DS00 2.0 µPC2756TB VCO OSCILLATION FREQUENCY vs. TUNING VOLTAGE VCO Oscillation Frequency fVCO (GHz) 2.5 L = 7 nH 2.0 L = 15 nH 1.5 L = 30 nH L = 50 nH 1.0 0.5 0 ATTEN 10 dB RL −40.0 dBm D 5 10 15 Tuning Voltage Vtu (V) 20 25 VCO Phase Noise (fVCO = 774.425 8 MHz center) MKR −53.16 dB 10 dB / 10.0 kHz VCC = 3 V Vtune = 3 V TA = +25 °C Monitor at pin 6 MKR 10.0 kHz −53.16 dB K CENTER 774.425 8 MHz RBW 1.0 kHz ++ VBW 100 Hz ATTEN 10 dB RL –40.0 dBm D SPAN 100.0 kHz SWP 3.0 s VCO Phase Noise (fVCO = 1.639 194 2 GHz center) MKR –40.34 dB 10 dB / 10.2 kHz VCC = 3 V Vtune = 3 V TA = +25 °C Monitor at pin 6 MKR 10.2 kHz –40.34 dB K CENTER 1.639 194 2 GHz RBW 1.0 kHz ++ VBW 100 Hz Data Sheet P12807EJ2V0DS00 SPAN 100.0 kHz SWP 3.0 s 11 µPC2756TB S-PARAMETOR 1 2 5 6 RF Port VCC = 3.0 V 4 : 100 MHz : 500 MHz 900 MHz 3 : 4 : 1 500 MHz 5 : 1 900 MHz 6 : 3 000 MHz 1 2 519.8 Ω − j 1.1 Ω 59.3 Ω − j 281.0 Ω 38.3 Ω − j 157.0 Ω 31.5 Ω − j 90.1 Ω 28.5 Ω − j 67.9 Ω 25.7 Ω − j 31.7 Ω START STOP 0.100000000 GHz 3.100000000 GHz 5 2 3 4 1 IF Port VCC = 3.0 V : 50 MHz : 80 MHz 3 : 130 MHz 4 : 240 MHz 5 : 300 MHz 1 2 12 3 22.5 Ω + j 6.1 Ω 24.2 Ω + j 11.3 Ω 30.2 Ω + j 16.6 Ω 42.6 Ω + j 17.5 Ω 46.6 Ω + j 15.6 Ω START STOP 0.050000000 GHz 0.300000000 GHz Data Sheet P12807EJ2V0DS00 µPC2756TB PACKAGE DIMENSIONS 6 pin super minimold (unit: mm) 0.15 +0.1 –0 0.1 MIN. 1.25±0.1 2.1±0.1 0.2 +0.1 –0 0 to 0.1 0.65 0.65 1.3 0.7 0.9±0.1 2.0±0.2 Data Sheet P12807EJ2V0DS00 13 µPC2756TB NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as to minimize ground impedance (to prevent abnormal oscillation). (3) Keep the track length between the ground pins as short as possible. (4) Connect a bypass capacitor (example 1 000 pF) to the VCC pin. (5) To construct oscillator, tank circuit must be externally attached to pin 3 and 4. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. µPC2756TB Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit : None IR35-00-3 VPS Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit : None VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit : None WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit : None – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 14 Data Sheet P12807EJ2V0DS00 µPC2756TB [MEMO] Data Sheet P12807EJ2V0DS00 15 µPC2756TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5