NEC UPG2304TK-E2

DATA SHEET
GaAs HBT INTEGRATED CIRCUIT
µPG2304TK
L-BAND VCO LOCAL BUFFER AMPLIFIER
DESCRIPTION
The µPG2304TK is GaAs HBT MMIC for VCO local buffer amplifier which were developed for mobile phone and
another L-band application.
This device realizes excellent performance by using InGaP HBT. This device is housed in a 6-pin lead-less
minimold package (1511). And this package is able to high-density surface mounting.
FEATURES
• Operation frequency
: fopt1 = 679 to 768 MHz (720 MHz TYP.)
: fopt2 = 1 270 to 1 371 MHz (1 320 MHz TYP.)
• Supply voltage
: VCC = 2.7 to 2.9 V (2.8 V TYP.)
• Low current consumption
: ICC = 3.5 mA [email protected] VCC = 2.8 V
• Excellent isolation
: ISL1 = 40 dB TYP. @ fopt1 = 720 MHz, Pin = −4 dBm, VCC = 2.8 V
: ISL2 = 35 dB TYP. @ fopt2 = 1 320 MHz, Pin = −4 dBm, VCC = 2.8 V
• High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATION
• VCO Buffer Amplifier etc.
ORDERING INFORMATION
Part Number
µPG2304TK-E2
Package
Marking
6-pin lead-less minimold
(1511)
G3F
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2304TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10162EJ01V0DS (1st edition)
Date Published May 2002 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices 2002
µPG2304TK
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Top View
G3F
1
2
3
Top View
6
1
5
2
4
3
6
5
SW Circuit
4
Pin No.
Pin Name
1
OUTPUT2 (1.5 GHz) / VCC
2
GND
3
OUTPUT1 (800 MHz) / VCC
4
INPUT1 (800 MHz)
5
N.C.
6
INPUT2 (1.5 GHz) / VSW
TRUTH TABLE
VSW = 0 V
VSW = 2.8 V
INPUT1 - OUTPUT1
High
Low
INPUT2 - OUTPUT2
Low
High
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VCC
4.0
V
Switch Voltage
VSW
4.0
V
Input Power
Pin
+10
dBm
125
Note
Power Dissipation
PD
mW
Operating Ambient Temperature
TA
−30 to +85
°C
Storage Temperature
Tstg
−65 to +150
°C
Circuit Current
ICC
15
mA
Control Current
ISW
0.3
mA
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RENGE (TA = +25°°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Operating Frequency 1
fopt1
679
720
768
MHz
Operating Frequency 2
fopt2
1 270
1 320
1 371
MHz
Supply Voltage
VCC
2.7
2.8
2.9
V
Switch Voltage 1
VSW1
2.7
2.8
2.9
V
Switch Voltage 2
VSW2
0
−
0.5
V
2
Data Sheet PG10162EJ01V0DS
µPG2304TK
ELECTRICAL CHARACTERISTICS
(TA = +25°°C, VCC = 2.8 V, Pin = −4 dBm, External input and output matching, unless otherwise
specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current 1
ICC1
VSW = 0 V
−
3.5
4.0
mA
Circuit Current 2
ICC2
VSW = 2.8 V
−
3.5
4.0
mA
Power Gain 1
GP1
VSW = 0 V, f = 720 MHz
−2
0
+2
dB
Power Gain 2
GP2
VSW = 2.8 V, f = 1 320 MHz
−2
0
+2
dB
Input Return Loss 1
RLin1
VSW = 0 V, f = 720 MHz
−
10
−
dB
Input Return Loss 2
RLin2
VSW = 2.8 V, f = 1 320 MHz
−
10
−
dB
Output Return Loss 1
RLout1
VSW = 0 V, f = 720 MHz
−
5
−
dB
Output Return Loss 2
RLout2
VSW = 2.8 V, f = 1 320 MHz
−
5
−
dB
Isolation 1
ISL1
VSW = 0 V, f = 720 MHz
30
40
−
dB
Isolation 2
ISL2
VSW = 2.8 V, f = 1 320 MHz
30
35
−
dB
Noise Figure 1
NF1
VSW = 0 V, f = 720 MHz
−
8.5
9.5
dB
Noise Figure 2
NF2
VSW = 2.8 V, f = 1 320 MHz
−
7.0
8.0
dB
Data Sheet PG10162EJ01V0DS
3
µPG2304TK
EVALUATION CIRCUIT (VCC = 2.8 V, Pin = −4 dBm)
VCC
VSW
1 000 pF
68 kΩ
270 Ω
1.5 pF
100 pF
6
1
OUTPUT2
INPUT2
56 Ω
2
SW Circuit
5
1.0 pF
OUTPUT1
3
270 Ω
INPUT1
4
68 Ω
1 000 pF
VCC
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10162EJ01V0DS
µPG2304TK
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Dual HBT LNA
6pin L2MM
Vcc
C4
C
3
2
1.5 G OUT
C
4
R
R
1.5 G IN
3
1
C
R
2
800 M OUT
3
R
800 M IN
1
R
C4
Vsw
Vcc
USING THE NEC EVALUATION BOARD
Symbol
Values
Part Number
Maker
R1
56 Ω
RR0816P-560-D
Susumu
R2
68 Ω
RR0816P-680-D
Susumu
R3
270 Ω
RR0816P-271-D
Susumu
R4
68 kΩ
RR0816P-683-D
Susumu
C1
1 pF
GRM39CH010C50PB
muRata
C2
1.5 pF
GRM39CH1R5C50PB
muRata
C3
100 pF
GRM39CH101J50PB
muRata
C4
1 000 pF
GRM39CH102J25PB
muRata
Data Sheet PG10162EJ01V0DS
5
µPG2304TK
TYPICAL CHARACTERLISTICS (TA = +25°°C, unless otherwise specified)
CIRCUIT CURRENT vs. INPUT POWER
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
5
5
Circuit Current ICC (mA)
4
f = 720 MHz,
VCC = 2.8 V,
VSW = 0 V
3
2
1
0
–20
Output Power Pout (dBm)
+5
0
–15
–10
–5
0
f = 720 MHz,
Pin = –4 dBm
4 VCC = 2.8 V,
VSW = 0 V
3
2
1
0
–40
+5
0
+20
+40
+60
+80
+100
Operating Ambient Temperature TA (˚C)
OUTPUT POWER vs. INPUT POWER
POWER GAIN vs.
OPERATING AMBIENT TEMPERATURE
+3
f = 720 MHz,
VCC = 2.8 V,
VSW = 0 V
–5
–10
–15
–20
–20
f = 720 MHz,
Pin = –4 dBm
+2
VCC = 2.8 V,
VSW = 0 V
+1
0
–1
–2
–15
–10
–5
0
+5
–3
–40
–20
0
+20
+40
+60
+80
Operating Ambient Temperature TA (˚C)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
6
–20
Input Power Pin (dBm)
Power Gain GP (dB)
Circuit Current ICC (mA)
INPUT1 - OUTPUT1
Data Sheet PG10162EJ01V0DS
+100
µPG2304TK
CIRCUIT CURRENT vs. INPUT POWER
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
5
5
Circuit Current ICC (mA)
4
f = 1 320 MHz,
VCC = 2.8 V,
VSW = 2.8 V
3
2
1
0
–20
Output Power Pout (dBm)
+5
0
–15
–10
–5
0
f = 1 320 MHz,
Pin = –4 dBm
4 VCC = 2.8 V,
VSW = 2.8 V
3
2
1
0
–40
+5
–20
0
+20
+40
+60
+80
+100
Input Power Pin (dBm)
Operating Ambient Temperature TA (˚C)
OUTPUT POWER vs. INPUT POWER
POWER GAIN vs.
OPERATING AMBIENT TEMPERATURE
+3
f = 1 320 MHz,
VCC = 2.8 V,
VSW = 2.8 V
Power Gain GP (dB)
Circuit Current ICC (mA)
INPUT2 - OUTPUT2
–5
–10
–15
–20
–20
f = 1 320 MHz,
Pin = –4 dBm
+2
VCC = 2.8 V,
VSW = 2.8 V
+1
0
–1
–2
–15
–10
–5
0
+5
–3
–40
–20
0
+20
+40
+60
+80
+100
Operating Ambient Temperature TA (˚C)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10162EJ01V0DS
7
µPG2304TK
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm)
Remark () : Reference value
8
Data Sheet PG10162EJ01V0DS
0.11+0.1
–0.05
(0.48) (0.48)
0.55±0.05
(0.96)
1.5±0.1
1.1±0.1
0.16+0.1
–0.05
1.3±0.1
µPG2304TK
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 120°C or below
: 1 time
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10162EJ01V0DS
9
µPG2304TK
• The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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parties arising from the use of these circuits, software and information.
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(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4 - 0110
10
Data Sheet PG10162EJ01V0DS