RoHS N-30ETU12 RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 30 A Available RoHS* COMPLIANT FEATURES Ultrafast recovery Ultrasoft recovery Ver low lRRM Ver low Qrr Compliant to RoHS Designed and qualified for industrial level N-30ETU12 N-30ATU12 Base cathode 2 Base cathode 2 BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 1 Cathode 30ETU12 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200V and 30 A continuous current, the 30ETU12 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED 30ETU12 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 3 Anode TO-220AC 3 Anode TO-220AB PRODUCT SUMMARY VR 1200 V VF at 30A at 25 °C 3.3 V IF(AV) 30 A trr (typical) 26 ns TJ (maximum) 150 °C Qrr 545 nC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1200 V Cathode to anode voltage VR Maximum continuous forward current IF TC= 100 ºC 30 Single pulse forward current IFSM TC= 25 ºC 280 Maximum repetitive forward current IFRM 100 TJ, TStg - 55 to 150 Operating junction and storage temperature range www.nellsemi.com Page 1 of 6 A ºC RoHS N-30ETU12 RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 30 A - 2.70 330 IF = 60 A - 3.4 - IF = 30 A, TJ = 125 ºC - 2.0 - V R = V R rated - - T J = 150°C, V R = V R rated - - 10 1000 µA IR = 100 µA UNITS V Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 36 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH UNITS DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL MIN. TYP. MAX. I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) - 30 35 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 26 - trr1 TJ = 25 ºC - 320 - trr2 TJ = 125 ºC - 435 - - 4 - - 9 - 545 - 2100 - trr Reverse recovery time Peak recovery current Reverse recovery charge (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS IF= 30A dIF/dt = -200 A/µs VR = 800 V IRRM1 TJ = 25 ºC IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC - Qrr2 TJ = 125 ºC - ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Thermal resistance, case to heatsink RthCS TEST CONDITIONS MIN. TYP. MAX. UNITS - - 300 °C - 0.5 0.8 Typical socket mount - - 80 Mounting surface, flat, smooth and gerased - 0.4 - - 2 - - 0.07 - oz. - 12 (10) kgf . cm (lbf . in) 0.063" from case (1.6 mm) for 10 s Weight 6 (5) Mounting torque Marking device www.nellsemi.com Case style TO-220AC 30ETU12 Case style TO-220AB 30ATU12 Page 2 of 6 K/W g RoHS N-30ETU12 RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.80 D=0.9 0.70 0.7 0.60 0.50 0.5 0.40 Note: PDM Thermal impedance(°C/W), Z θJC 0.90 0.30 t1 0.3 t2 0.20 SINGLE PULSE 0.1 0.10 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θJC +T C 0.05 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 600 200 T J =125°C V R =800V Reverse recovery time, t rr (ns) 180 Forward current, I F (A) 160 140 T J =175°C 120 100 80 T J =125°C 60 T J =25°C 40 T J =-55°C 60A 500 400 30A 300 15A 200 100 20 0 0 0 1 3 2 5 4 0 Anode-to-cathode voltage (V), V F Fig.4 Reverse recovery charge vs. current rate of change 400 600 800 1000 1200 Fig 5. Reverse recovery current vs. current rate of change 60A 4000 (nC) 3000 30A 2000 15A 1000 T J =125°C V R =800V 30 60A 25 30A (A) T J =125°C V R =800V Reverse recovery current, I RRM 35 5000 Reverse recovery charge, Q rr 200 Current rate of change(A/μs), -di F /dt 20 15 15A 10 5 0 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/μs), -di F /dt www.nellsemi.com 200 400 600 800 1000 Current rate of change (A/μs), -di F /dt Page 3 of 6 1200 RoHS N-30ETU12 RoHS SEMICONDUCTOR Nell High Power Products Fig6. Dynamic parameters vs. junction temperature Fig.7 Maximum average forward current vs. case temperature 1.2 50 1.0 Duty cycle = 0.5 T J =175°C 45 trr 40 trr IRRM 35 0.8 l F(AV) (A) Dynamic parameters, K f (Normalized to 1000A/µs) Qrr 0.6 0.4 30 25 20 15 Qrr 10 0.2 5 0.0 0 25 75 50 0 100 125 150 25 75 50 Junction temperature (°C),T J 100 125 150 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage 200 160 140 120 (pF) Junction capacitance, C J 180 100 80 60 40 20 0 1 10 100 200 reverse voltage (V), V R Ordering Information Tabel Device code N - 1 www.nellsemi.com 30 E T U 2 3 4 5 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-220AB or TO-220AC 5 - Ultrafast Recovery 6 - Voltage Rating (12 = 1200 V) Page 4 of 6 12 (30 = 30A) E = 2 pins A = 3 pins 175 RoHS N-30ETU12 RoHS SEMICONDUCTOR Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions www.nellsemi.com Page 5 of 6 RoHS N-30ETU12 RoHS SEMICONDUCTOR Nell High Power Products TO-220AC Package Outline N-30ETU12 2 pins 10.26 [0.404] 9.98 [0.393] Cathode 4.72 [0.186] 4.42 [0.174] 2.90 [ 0.114] 2.59 [0.102] 1.47 [0.058] 1.19 [0.047] Ø3.89 [0.153] Ø3.78 [0.149] 12.90 [0.508] 12.50 [0.492] 9.19 [0.362] 8.99 [0.354] 3.91 [0.154] 3.40 [0.134] 2.79 [ 0.110] 2.51 [0.099] 13.49 [0.531] 13.08 [0.515] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.46 [0.018] 0.36 [0.014] 0.034 [0.86] 0.030 [0.76] 2.54 [0.100] TYP Base cathode 2 5.18 [0.204] 4.98 [0.196] 1 Cathode 3 Anode TO-220AB Package Outline N-30ATU12 3 pins 10.26 [0.404] 9.98 [0.393] Cathode 4.72 [0.186] 4.42 [0.174] 2.90 [ 0.114] 2.59 [0.102] 1.47 [0.058] 1.19 [0.047] Ø3.89 [0.153] Ø3.78 [0.149] 12.90 [0.508] 12.50 [0.492] 9.19 [0.362] 8.99 [0.354] 3.91 [0.154] 3.40 [0.134] 2.79 [ 0.110] 2.51 [0.099] 13.49 [0.531] 13.08 [0.515] Cathode 0.057 [1.45] 0.047 [1.19] Anode 0.46 [0.018] 0.36 [0.014] 2.54 [0.100] TYP 5.18 [0.204] 4.98 [0.196] 0.034 [0.86] 0.030 [0.76] Base cathode 2 1 Anode www.nellsemi.com Page 6 of 6 3 Anode