OPTODIODE OD

HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-110LISOLHT
FEATURES
• Wide temperature rating
• 2 lead TO-39 package
• Narrow angle of emission
• Isolated case
• RoHS and REACH compliant
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
TEST CONDITIONS
MIN
TYP
Total Power Output, Po
PARAMETERS
IF = 500mA
50
100
mW
Peak Emission Wavelength, λP
IF = 50mA
850
nm
Spectral Bandwidth at 50%, Δλ
IF = 50mA
40
nm
Half Intensity Beam Angle, θ
IF = 50mA
7
Deg
Forward Voltage, VF
IF = 500mA
1.7
Reverse Breakdown Voltage, VR
Capacitance, C
IR = 10μA
5
30
VR = 0V
MAX
2
UNITS
Volts
Volts
pF
Rise Time
20
nsec
Fall Time
20
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
1000mW
500mA
Peak Forward Current (10μs, 200Hz)2
1.5A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate
per Thermal Derating Curve above 25°C
2Derate
linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
-65°C to 150°C
150°C
Thermal Resistance, RTHJA
150°C/W Typical
Thermal Resistance, RTHJC
60°C/W Typical
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision July 1, 2013
SUPER HIGH-POWER GaAlAs IR EMITTERS
1000
OD-110LISOLHT
THERMAL DERATING CURVE
POWER DISSIPATION (mW)
MAXIMUM RATINGS
900
800
700
INFINITE
HEAT SINK
600
500
NO
HEAT SINK
400
300
200
100
RELATIVE POWER OUTPUT (%)
1.0
25
50
75
100
AMBIENT TEMPERATURE (°C)
150
RADIATION PATTERN
DEGRADATION CURVE
100
IF = 150mA
Tj = 63°C
0.9
IF = 250mA
Tj = 89°C
0.8
IF = 450mA
Tj = 90°C
0.7
450 mA
-3 Dev
TCASE = 25°C
NO PRE BURN-IN PERFORMED
0.6
0.5
125
RELATIVE POWER OUTPUT (%)
0
1
10
100
STRESS TIME, (hrs)
1,000
80
60
40
20
0
–25
10,000
SPECTRAL OUTPUT
–20
–15
–10
–5
0
5
10
BEAM ANGLE, θ(deg)
15
20
25
POWER OUTPUT vs TEMPERATURE
100
1.5
RELATIVE POWER OUTPUT
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
1.4
80
60
40
20
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
750
POWER OUTPUT, Po (mW)
100
800
850
WAVELENGTH, λ(nm)
900
950
0.5
–50
–25
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
POWER OUTPUT vs FORWARD CURRENT
10
DC
1
10
100
FORWARD CURRENT, IF (mA)
1,000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision July 1, 2013