OPTODIODE OD50W

SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES
ANODE
(CASE)
.157
.169
.100
.018
.324 .246
.332 .254
•
•
•
•
•
.357
.362
.200
.031
Ultra high power output
Four wire bonds on die corners
Very uniform optical beam
Standard 3-lead TO-39 hermetic package
Chip size .030 x .030 inches
20
13
GLASS
.012 HIGH
MAX
OD-50W
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two cathode
pins must be externally connected together.
CATHODE
.025
.040
45°
.500
PARAMETERS
MB
E
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
TEST CONDITIONS
IF = 500mA
IF = 10A
IF = 500mA
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Forward Voltage, VF
IF = 50mA
DE
Half Intensity Beam Angle, θ
MIN
60
CE
Radiant Intensity, Ie
R
RoHS
Capacitance, C
IR = 10μA
5
FE
Fall Time
UNITS
mW
60
mW/sr
nm
80
nm
110
Deg
30
VR = 0V
Rise Time
MAX
880
1.65
IF = 500mA
Reverse Breakdown Voltage, VR
TYP
75
1000
2
Volts
Volts
90
pF
0.7
μsec
0.7
μsec
Power Dissipation1
LI
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
1000mW
Continuous Forward Current
OF
500mA
Peak Forward Current (10μs, 400Hz)2
10A
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
EN
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
145°C/W Typical
Thermal Resistance, RTHJA2
75°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
SUPER HIGH-POWER GaAlAs IR EMITTERS
100
INFINITE
HEAT SINK
700
600
500
NO
HEAT SINK
400
300
100
0
100
25
50
75
AMBIENT TEMPERATURE (°C)
t = 100μs
1
t
D=
T
0.1
1
DUTY CYCLE, D (%)
IF = 150mA
80
IF = 250mA
70
IF = 450mA
103
STRESS TIME, (hrs)
104
60
40
20
0
–100 –80
105
DE
102
FE
8
RELATIVE POWER OUTPUT
FORWARD I-V CHARACTERISTICS
10
LI
6
4
2
100
80
CE
TCASE = 25°C
NO PRE BURN-IN PERFORMED
101
10
RADIATION PATTERN
100
60
t
T
Ip
DEGRADATION CURVE
50
FORWARD CURRENT, IF (amps)
t = 50μs
0.1
0.01
100
90
12
t = 10μs
10
MB
ER
POWER DISSIPATION (mW)
800
200
RELATIVE POWER OUTPUT (%)
TYPICAL CHARACTERISTICS
MAXIMUM RATINGS
900
13
PEAK FORWARD CURRENT, Ip (amps)
1,000
MAXIMUM PEAK PULSE CURRENT
20
THERMAL DERATING CURVE
RELATIVE POWER OUTPUT (%)
1,100
OD-50W
–60
–40
–20
0
20
40
BEAM ANGLE, θ(deg)
60
80
100
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
OF
0.6
0.5
–50
0
0
2
4
6
FORWARD VOLTAGE, VF (volts)
8
10
SPECTRAL OUTPUT
75
100
POWER OUTPUT vs FORWARD CURRENT
D
80
POWER OUTPUT, Po (mW)
RELATIVE POWER OUTPUT (%)
0
25
50
AMBIENT TEMPERATURE (°C)
1,000
100
EN
–25
60
40
100
10
20
0
750
800
850
900
WAVELENGTH, λ(nm)
950
1,000
1
10
DC
PULSE
10μs, 100Hz
100
1,000
FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013