OPTODIODE SXUV100

PHOTODIODE 100 mm2
SXUV100
FEATURES
• Single active area
• Detection to 1 nm
• Stable response after exposure
to EUV/UV conditions
• Protective cover plate
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
Responsivity, R
Shunt Resistance, Rsh
TEST CONDITIONS
MIN
TYP
MAX
100
10 mm x 10 mm
UNITS
mm2
(see graph on next page)
@ ± 10 mV
10
MOhms
Reverse Breakdown Voltage, VR
IR = 1 µA
10
Volts
Capacitance, C
VR = 0V
6
nF
RL = 50Ω , VR = 15V
250
nsec
Response Time, tr
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
Nitrogen or Vacuum
Maximum Junction Temperature
Lead Soldering Temperature1
-10° TO 40°C
-20°C TO 80°C
70°C
260°C
1
0.08" from case for 10 seconds
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
PHOTODIODE 100 mm2
Responsivity (A/W)
0.35
SXUV100
PHOTON RESPONSIVITY
0.30
0.25
0.20
0.15
0.10
0.05
0.0
1
10
Wavelength (nm)
100
1000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013