GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 487 P Wesentliche Merkmale Features • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309 • • • • • Anwendungen Applications • IR-Fernsteuerung von Fernseh-, Rundfunkund Videogeräten, Lichtdimmern • Lichtschranken bis 500 kHz • Münzzähler • Sensorik • Diskrete Optokoppler • IR remote control for hifi and TV sets, video tape recorder, dimmers • Light-reflection switches (max. 500 kHz) • Coin counters • Sensor technology • Discrete optocouplers Very highly efficient GaAlAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors Same package as SFH 309 Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 487 P Q62703Q0517 3-mm-LED-Gehäuse, plan, klares violettes Epoxy-Gieβ harz, Anschlüsse im 2.54-mm-Raster (1/10’’), Anodenkennzeichnung: kürzerer Anschluβ 3 mm LED package (T 1), plane, violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 mm (1/10’’), anode marking: short lead 2007-04-02 1 SFH 487 P Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 5 V Durchlaβstrom Forward current IF 100 mA Stoβstrom, τ ≤ 10 μs Surge current IFSM 2.5 A Verlustleistung Power dissipation Ptot 200 mW Wärmewiderstand, freie Beinchenlänge max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm RthJA 375 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA λpeak 880 nm Spektrale Bandbreite bei 50% von Imax, IF = 100 mA Spectral bandwidth at 50% of Imax Δλ 80 nm Abstrahlwinkel Half angle ϕ ± 65 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.3 × 0.3 mm² Abstand Chipoberfläche bis Gehäusevorderseite Distance chip front to case surface H 0.4 … 0.8 mm Kennwerte (TA = 25 °C) Characteristics 2007-04-02 2 SFH 487 P Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit 0.6/0.5 μs Co 15 pF VF 1.5 (< 1.8) 3.0 (< 3.8) V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) μA Gesamtstrahlungsfluβ Total radiant flux IF = 100 mA, tp = 20 ms Φe 25 mW Temperaturkoeffizient von Ie bzw. Φe, IF = 100 mA Temperature coefficient or Ie or Φe, IF = 100 mA TCI – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV –2 mV/K Temperaturkoeffizient von λpeak, IF = 100 mA Temperature coefficient of λpeak, IF = 100 mA TCλ 0.25 nm/K Schaltzeiten, Ie von 10% auf 90% und von 90% auf tr, tf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω Kapazität Capacitance VR = 0 V, f = 1 MHz Durchlaβspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs 2007-04-02 3 SFH 487 P Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Wert Value Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie >2 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 μs Ie typ. 30 mW/sr 2007-04-02 4 SFH 487 P Ie Radiant Intensity Ι 100 mA= f (IF) e Single pulse, tp = 20 μs Relative Spectral Emission Ιrel = f (λ) 100 Ιe 1 80 10 60 10 0 100 75 10 -1 50 20 10 -2 25 10 -3 800 850 900 950 nm 1000 λ Forward Current, IF = f (VF) Single pulse, tp = 20 μs 10 0 10 1 10 2 10 3 mA 10 4 ΙF Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter OHR00886 10 4 OHR00881 10 1 mA A OHR00880 125 40 0 750 ΙF IF = f (TA) Ι F mA Ι e (100mA) % Ι rel OHR00878 10 2 OHR00877 Max. Permissible Forward Current 0 0 20 40 60 80 ˚C 100 T Forward Current vs. Lead Length between the Package Bottom and the PC-Board IF = f (I), TA = 25 °C OHR00949 120 mA ΙF D = 0.005 0.01 0.02 0.05 10 0 Ι F 100 10 3 0.1 0.2 80 10 -1 60 0.5 10 2 DC 40 10 -2 D= 10 -3 0 1 2 3 4 5 6 V VF tp T tp T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 8 20 ΙF 10 1 s 10 2 tp Radiation Characteristics Ιrel = f (ϕ) 40 30 20 10 0 ϕ OHR01894 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 2007-04-02 0.8 0.6 0.4 0 20 40 60 80 5 100 120 0 0 5 10 15 20 25 mm 30 SFH 487 P Maßzeichnung Package Outlines 0.8 0.4 0.7 0.4 2.54 mm spacing 1.8 1.2 3.1 2.5 2.0 1.7 29 27 4.5 4.0 Cathode ø3.1 ø2.9 Area not flat 0.6 0.4 3.5 Chip position 4.0 3.6 0.6 0.4 GEX06308 Maße in mm / Dimensions in mm. Wellenlöten (TTW) Recommended Solder Pad TTW Soldering 4.8 (0.189) Empfohlenes Lötpaddesign 4 (0.157) OHLPY985 Maße in mm (inch) / Dimensions in mm (inch). 2007-04-02 6 SFH 487 P Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-02 7 Mouser Electronics Related Product Links 720-SFH487P - Osram Opto Semiconductor SFH 487 P