GaAlAs-IR-Lumineszenzdioden (880 nm) in SMR® Gehäuse GaAlAs Infrared Emitters (880 nm) in SMR® Package Lead (Pb) Free Product - RoHS Compliant SFH 4580 SFH 4585 SFH 4580 SFH 4585 Wesentliche Merkmale Features • • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad SMR® (Surface Mount Radial) Gehäuse Für Oberflächenmontage geeignet Gegurtet lieferbar Gehäusegleich mit Fotodiode SFH 2500/ SFH 2505 • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • UL Version erhältlich • • • • • Anwendungen Applications • IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern • Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb • Rauchmelder • Sensorik • Diskrete Lichtschranken • Diskrete Optokoppler • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers • Remote control for steady and varying intensity • Sensor technology • Smoke detectors • Discrete interrupters • Discrete optocouplers Very highly efficient GaAlAs-LED SMR® (Surface Mount Radial) package Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 • High reliability • Spectral match with silicon photodetectors • UL version available Typ Type Bestellnummer Ordering Code Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4580 Q65110A2632 ≥ 25 (typ. 55) SFH 4585 Q65110A2631 1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr 2009-08-21 1 SFH 4580, SFH 4585 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 5 V Durchlassstrom Forward current IF 100 mA Stoßstrom, tp = 10 μs, D = 0 Surge current IFSM 2.5 A Verlustleistung Power dissipation Ptot 200 mW 375 K/W Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 20 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 20 mm2 each Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA λpeak 880 nm Spektrale Bandbreite bei 50% von Irel Spectral bandwidth at 50% of Irel IF = 100 m A Δλ 80 nm Abstrahlwinkel Half angle ϕ ± 15 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.3 × 0.3 mm² Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top H 3.9 … 4.5 mm 2009-08-21 2 SFH 4580, SFH 4585 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω tr , tf 0.6/0.5 μs Kapazität Capacitance VR = 0 V, f = 1 MHz Co 15 pF VF VF 1.50 (≤ 1.8) 3.00 (≤ 3.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) μA Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Φe 25 mW Temperaturkoeffizient von Ie bzw. Φe, IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA TCI – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV –2 mV/K Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA TCλ 0.25 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs 2009-08-21 3 SFH 4580, SFH 4585 Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Wert Value Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie typ 25 55 mW/sr mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 μs Ie typ 500 mW/sr 2009-08-21 4 SFH 4580, SFH 4585 Relative Spectral Emission Irel = f (λ) Single pulse, tp = 20 μs OHR00877 100 Ιe Ι e (100mA) Max. Permissible Forward Current IF = f (TA) 125 10 1 100 60 10 0 75 40 10 -1 50 20 10 -2 25 10 -3 800 850 900 950 nm 1000 λ Forward Current IF = f (VF), single pulse, tp = 20 μs 10 0 10 1 10 2 10 3 mA 10 4 ΙF Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter OHR00886 10 4 OHR00881 10 1 mA A ΙF D = 0.005 0.01 0.02 0.05 10 0 10 3 0.1 0.2 10 -1 0.5 10 2 DC 10 -2 D= tp T tp ΙF T 10 -3 0 1 2 3 4 5 6 V VF 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 8 10 1 s 10 2 tp Radiation Characteristics Irel = f (ϕ) 40 30 20 10 ϕ 0 OHF00300 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2009-08-21 0.8 0.6 0.4 0 20 OHF01534 I F mA 80 0 750 ΙF OHR00878 10 2 % Ι rel Ie = f (IF) Ie 100 mA Radiant Intensity 40 60 80 5 100 120 0 0 10 20 30 40 50 60 70 80 ˚C 100 T SFH 4580, SFH 4585 Maßzeichnung Package Outlines SFH 4580 2.54 (0.100) spacing 14.7 (0.579) 13.1 (0.516) Cathode 4.5 (0.177) 3.9 (0.154) 2.7 (0.106) 2.4 (0.094) 4.8 (0.189) 4.4 (0.173) 3.7 (0.146) 3.3 (0.130) 2.05 (0.081) R 1.95 (0.077) -0.1...0.2 (-0.004...0.008) 7.5 (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) Chip position 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6960 SFH 4585 2.54 (0.100) spacing 15.5 (0.610) 14.7 (0.579) Cathode 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6961 Maße in mm (inch) / Dimensions in mm (inch). 2009-08-21 -0.15...0.15 (-0.006...0.006) 2.7 (0.106) 2.4 (0.094) 4.8 (0.189) 4.4 (0.173) 8.0 (0.315) 7.4 (0.291) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) 6 SFH 4580, SFH 4585 5.3 (0.209) Reflow Löten Reflow Soldering 2.54 (0.100) SFH 4580 1.3 (0.051) Empfohlenes Lötpaddesign Recommended Solder Pad Bauteil positioniert Component Location on Pad Padgeometrie für verbesserte Wärmeableitung Lötpad Paddesign for improved heat dissipation 3 (0.118) Lötstopplack Solder resist 7 (0.276) 5.9 (0.232) 2.54 (0.100) SFH 4585 1.3 (0.051) Cu-Fläche > 20 mm 2 Cu-area > 20 mm 2 Padgeometrie für verbesserte Wärmeableitung OHFY2449 Bauteil positioniert Component Location on Pad Lötpad (1 (0.039)) 1.5 (0.059) Paddesign for improved heat dissipation 5.2 (0.205) 3 (0.118) Lötstopplack Solder resist Aussparung 4.85 (0.191) ±0.05 (0.002) 7 (0.276) Cu-Fläche > 20 mm 2 Cu-area > 20 mm 2 Maße in mm (inch) / Dimensions in mm (inch). 2009-08-21 7 OHF02450 SFH 4580, SFH 4585 Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile ˚C T Vorbehandlung nach JEDEC Level 3 Preconditioning acc. to JEDEC Level 3 (nach J-STD-020C) (acc. to J-STD-020C) 255 ˚C 240 ˚C 250 ˚C 260 ˚C +0 -5 ˚C 245 ˚C ±5 ˚C ˚C 235 ˚C +5 -0 ˚C 217 ˚C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 min. condition for IR Reflow Soldering: solder point temperature ≥ 235 °C for at least 10 sec. 25 ˚C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Leibnizstrasse 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-08-21 8 Mouser Electronics Related Product Links 720-SFH4580 - Osram Opto Semiconductor SFH 4580 720-SFH4585-Z - Osram Opto Semiconductor SFH 4585-Z