GC9001 – GC9011 PASSIVE DEVICES – Spiral Bias Elements ® TM RoHS Compliant KEY FEATURES The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductors supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit requirements for DC power injection through Ku (or J) band. The actual spiral bias element, consists of a 5 micron, nominal, thick plated gold spiral trace with a 3 mil diameter bonding pad at either end. Dimensional Uniformity Planar Design Passivated Spiral Element Physical and Dimensional Stability Through Temp Cycle and Vibration A dense passivation is applied on the conductive portion of the spiral geometry so that undesirable environmental or particulate effects during operation can be prevented. The bonding pads are left exposed to provide easy, low resistance lead attachment. Fused quartz substrates are used to minimize dielectric losses, near zero TCE and provide durability during handling and assembly. Contemporary fabrication processes combined with Microsemi Lowell’s extensive experience in microwave component and hybrid circuit engineering has generated a product that will be both operationally predictable and reliable when used as a means to supply DC to a small signal hybrid microwave circuit. Models as a Lossy Transmission Line Eliminates Potting or Coating Wirewound Coils Designed for Microwave Applications From 2 to 18 GHz Reduced Assembly Costs 1 RoHS Compliant This series of devices meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS Bias injection into oscillators, amplifiers and microwave switches (bias tees). Can be used to bias tuning varactor diodes, pin diodes, transistors and monolithic circuit components. These spiral elements provide extreme freedom from in band resonance; very smooth wide frequency response. APPLICATIONS/BENEFITS RF Bias Networks Wideband performance ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit I 250 mA Storage Temperature TSTG -65 to +200 ºC Operating Temperature TOP -55 to +150 ºC Working Current IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change, consult factory for the latest information. 1 These devices are supplied with gold terminations suitable for wire-bonding. These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 www.MICROSEMI.com DESCRIPTION GC9001 – GC9011 PASSIVE DEVICES – Spiral Bias Elements ® TM RoHS Compliant . www.MICROSEMI.com ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) L(nH) RDC(Ohms) (Typ) (Typ) Model Number OUTLINE GC9005 3 1.0 A GC9001 6 1.5 A GC9006 10 2.0 B GC9002 15 2.5 B GC9007 21 3.5 C GC9008 28 4.0 C GC9003 36 5.0 C GC9009 45 6.0 D GC9010 55 7.0 D GC9011 68 8.0 D GC9004 78 8.5 D MECHANICAL DIMENSIONS Chip Chip Thickness(C) OUTLINE L(A) X W(B) (Inches) (Inches) (Max) (+/-0.002) A 0.031” X 0.031" 0.011 B 0.032” X 0.032" 0.011 C 0.041” X 0.041" 0.011 D 0.061” X 0.061" 0.011 . CHIP ATTACHMENT RIBBON OR WIRE BONDING Chip attachment to hybrid circuits or module bodies can be accomplished with either conductive or nonconductive epoxy paste. EPO TEK H-61 or EPO TEK H-20 are examples of some commonly used epoxy pastes Thermo-compression bonding is recommended. A temperature of 175°C with pressure of 25 grams would be adequate for bonding most gold ribbon or wire. For optimum performance, attach RF input to pad at center of coil and the bypass network (capacitance) to outside pad. Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GC9001 – GC9011 RECOMMENDED CHIP ATTACHMENT AND LEAD BONDING PROCEDURES