IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4258 SFH 4259 Vorläufige Daten / Preliminary Data OS-PCN-2010-033-A. To be used for design-in. Wesentliche Merkmale Features • • • • Infrarot LED mit hoher Ausgangsleistung Halbwinkel SFH 4258: ± 15° Halbwinkel SFH 4259: ± 25° Hohe Bestromung bei hohen Temperaturen möglich • Kurze Schaltzeiten • • • • Anwendungen Applications • Infrarotbeleuchtung für Kameras • IR-Datenübertragung • Sensorik • Infrared Illumination for cameras • IR Data Transmission • Optical sensors Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. High Power Infrared LED Half angle SFH 4258: ± 15° Half angle SFH 4259: ± 25° High forward current allowed at high temperature • Short switching times Typ Type Bestellnummer Ordering Code Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4258 Q65110A2975 ≥ 40 (typ. 90) SFH 4259 Q65110A2464 ≥ 25 (typ. 55) 1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr 2010-12-17 1 SFH 4258, SFH 4259 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 5 V Vorwärtsgleichstrom Forward current IF 100 mA Stoßstrom, tp = 100 μs, D = 0 Surge current IFSM 1.5 A Verlustleistung Power dissipation Ptot 180 mW 300 K/W 140 K/W Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA λpeak 860 nm Centroid-Wellenlänge der Strahlung Centroid wavelength IF = 100 mA λcentroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Δλ 42 nm ϕ ϕ ± 15 ± 25 Grad deg. Abstrahlwinkel Half angle SFH 4258 SFH 4259 2010-12-17 2 SFH 4258, SFH 4259 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.3 × 0.3 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω tr , tf 12 ns VF VF 1.5 (< 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for μA reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Φe typ 50 mW Temperaturkoeffizient von Ie bzw. Φe, TCI IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV – 0.7 mV/K Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA TCλ + 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs 2010-12-17 3 SFH 4258, SFH 4259 Strahlstärke Ie in Achsrichtung1) gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Werte Values SFH 4258 -U SFH 4258 -V Einheit Unit SFH 4258 -AW Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 40 80 63 125 100 200 mW/sr mW/sr Strahlstärke Radiant intensity IF = 1A, tp = 100 µs Ie typ. 400 600 800 mW/sr SFH 4259 -T SFH 4259 -U Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 25 50 40 80 mW/sr mW/sr Strahlstärke Radiant intensity IF = 1A, tp = 100 µs Ie typ. 250 350 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) 2010-12-17 4 SFH 4258, SFH 4259 Abstrahlcharakteristik Radiation Characteristics Irel = f (ϕ) SFH 4258 40˚ 30˚ 20˚ 10˚ OHL00021 0˚ ϕ 50˚ 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0 0.4 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ Abstrahlcharakteristik Radiation Characteristics Irel = f (ϕ) SFH 4259 40˚ 30˚ 20˚ 10˚ ϕ 0˚ OHL00999 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 2010-12-17 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 5 60˚ 80˚ 100˚ 120˚ SFH 4258, SFH 4259 Relative Spectral Emission Irel = f (λ) Ie = f (IF) Ie 100 mA Single pulse, tp = 20 μs OHF04135 100 I rel Radiant Intensity OHL01715 101 Ie % Max. Permissible Forward Current IF = f (TA), RthJA = 300 K/W OHL01716 120 mA I e (100 mA) I F 100 80 100 5 80 10-1 60 60 5 40 40 10 20 -2 20 5 0 700 750 800 nm 950 850 10-3 0 10 5 10 1 5 10 2 λ IF Forward Current IF = f (VF) Single pulse, tp = 20 μs IF 10 -1 1.6 IF A 1.4 OHF02505 t 1.2 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1 1.0 0.8 5 0.6 10 -3 IF T D= 5 10 -2 tP D = TP 0.4 5 0.2 10 -4 0 0.5 1 1.5 2 2.5 V 3 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp VF 2010-12-17 6 0 0 20 40 60 80 ˚C 120 TA Permissible Pulse Handling Capability IF = f (τ), TA = 25 °, duty cycle D = parameter OHL01713 10 0 A mA 10 3 SFH 4258, SFH 4259 Maßzeichnung Package Outlines SFH 4258 3.8 (0.150) max. 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1.7 (0.067) 2.1 (0.083) 0.9 (0.035) 0.8 (0.031) 0.6 (0.024) 0.7 (0.028) 1.1 (0.043) 1 Package marking 0.18 (0.007) ø2.55 (0.100) ø2.60 (0.102) 0.1 (0.004) typ 0.5 (0.020) 3.7 (0.146) 3.3 (0.130) 3.4 (0.134) 3.0 (0.118) 2 4˚±1 4 (2.4) (0.095) 3 0.6 (0.024) 0.4 (0.016) 0.13 (0.005) GPLY6127 3.5 (0.138) max. SFH 4259 2.1 (0.083) 1.7 (0.067) 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 0.9 (0.035) 0.7 (0.028) 2.1 (0.083) 1.1 (0.043) 1 Package marking 0.18 (0.007) ø2.55 (0.100) ø2.60 (0.102) 0.1 (0.004) typ 0.5 (0.020) 3.7 (0.146) 3.3 (0.130) 3.4 (0.134) 3.0 (0.118) 2 4˚±1 4 (2.4) (0.095) 3 0.6 (0.024) 0.4 (0.016) 0.13 (0.005) GPLY6128 Maße in mm (inch) / Dimensions in mm (inch). Gehäuse / Package Power TOPLED® mit Linse, klarer Verguss / Power TOPLED® with lens, clear resin Anschlussbelegung pin configuration 2010-12-17 1 = Kathode / cathode 2/3/4 = Anode / anode 7 SFH 4258, SFH 4259 Empfohlenes Lötpaddesign Recommended Solder Pad Design Reflow Löten Reflow Soldering Padgeometrie für verbesserte Wärmeableitung 3.3 (0.130) Paddesign for improved heat dissipation 3.3 (0.130) 2.3 (0.091) 11.1 (0.437) 1.5 (0.059) 1.1 (0.043) 3.7 (0.146) 0.8 (0.031) 0.7 (0.028) Cu Fläche / <_ 16 mm 2 per pad Cu-area Lötstoplack Solder resist Empfohlenes Lötpaddesign Recommended Solder Pad Design OHFP3021 Wellenlöten TTW TTW Soldering 2 (0.079) 6.1 (0.240) Bewegungsrichtung der Platine PCB-direction 1 (0.039) 2 (0.079) 2 (0.079) 3 (0.118) 6 (0.236) 2.8 (0.110) 2.8 (0.110) 0.5 (0.020) Cu Fläche / > 16 mm 2 per pad Cu-area Padgeometrie für verbesserte Wärmeableitung Lötstoplack Solder resist Paddesign for improved heat dissipation 2010-12-17 8 OHPY3040 SFH 4258, SFH 4259 Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020-D.01) (acc. to J-STD-020-D.01) OHA04525 300 ˚C T 250 Tp 245 ˚C 240 ˚C tP 217 ˚C 200 tL 150 tS 100 50 25 ˚C 0 0 50 100 150 200 250 s 300 t Pb-Free (SnAgCu) Assembly Profile Feature Recommendation Max. Ratings Ramp-up Rate to Preheat* 25°C to 150°C 2°K / sec 3°K / sec Time ts from TSmin to TSmax (150°C to 200°C 100s min. 60sec max. 120sec Ramp-up Rate to Peak*) TSmax to TP 2°K / sec 3°K / sec ) Liquidus Temperture TL 217°C Time tL above TL 80sec max. 100sec Peak Temperature TP 245°C max. 250°C Time tP within 5°C of the specified peak temperature TP - 5K 20sec min. 10sec max. 30sec Ramp-down Rate* TP to 100°C 3°K / sec 4°K / sec maximum Time 25°C to Peak temperature max. 8 min. All temperatures refer to the center of the package, measured on the top of the component * slope calculation ΔT/Δt: Δt max. 5 sec; fulfillment for the whole T-range 2010-12-17 9 SFH 4258, SFH 4259 Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2010-12-17 10 Mouser Electronics Related Product Links 720-SFH4258-Z - Osram Opto Semiconductor SFH 4258-Z 720-SFH4259-Z - Osram Opto Semiconductor SFH 4259-Z