APTM10DUM05TG VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Dual common source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S D2 D2 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A January, 2010 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10DUM05TG– Rev 2 Symbol VDSS APTM10DUM05TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 4.5 2 Max 200 1000 5 4 ±200 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 250A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 20 8 2.9 nF 700 nC 120 360 80 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 250A RG = 2.5 Ω 165 ns 280 135 1.1 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, RG =2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, RG = 2.5Ω mJ 1.2 1.22 mJ 1.28 Source - Drain diode ratings and characteristics Reverse Recovery Charge Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 250A IS = - 250A VR = 66V diS/dt = 200A/µs Max 278 207 1.3 5 Unit A Tj = 25°C 270 V V/ns ns Tj = 25°C 5.8 µC January, 2010 Qrr Test Conditions X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 278A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2-6 APTM10DUM05TG– Rev 2 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time APTM10DUM05TG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ Max 0.16 150 125 100 4.7 160 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10DUM05TG– Rev 2 January, 2010 SP4 Package outline (dimensions in mm) APTM10DUM05TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 240 VGS=15V, 10V & 9V 1000 ID, Drain Current (A) 800 600 8V 400 7V 6V 200 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 160 120 80 TJ=25°C 40 0 TJ=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 2 3 4 5 6 7 DC Drain Current vs Case Temperature 300 RDS(on) vs Drain Current 1.2 Normalized to VGS=10V @ 125A 1.1 VGS=10V 1 VGS=20V 0.9 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 250 200 150 100 50 0.8 0 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 25 50 75 100 125 150 January, 2010 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4-6 APTM10DUM05TG– Rev 2 ID, Drain Current (A) Low Voltage Output Characteristics 1200 APTM10DUM05TG 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 125A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 25 50 75 100 125 150 Maximum Safe Operating Area 1000 100µs limited by RDSon 100 0.6 1ms Single pulse TJ=150°C TC=25°C 10ms 10 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=250A TJ=25°C 14 VDS=20V 12 VDS=50V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) VDS=80V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) January, 2010 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) www.microsemi.com 5-6 APTM10DUM05TG– Rev 2 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10DUM05TG Delay Times vs Current Rise and Fall times vs Current 250 350 250 td(off) VDS=66V RG=2.5Ω TJ=125°C L=100µH 200 150 td(on) 100 150 tf 100 0 0 0 100 200 300 ID, Drain Current (A) 400 0 5 2 Switching Energy (mJ) VDS=66V RG=2.5Ω TJ=125°C L=100µH 2.5 Eoff 1.5 Eon 1 0.5 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance Switching Energy vs Current 3 Eoff 0 VDS=66V ID=200A TJ=125°C L=100µH 4 Eoff 3 Eon 2 1 0 0 100 200 300 400 0 5 ID, Drain Current (A) Operating Frequency vs Drain Current ZCS Hard switching 60 ZVS VDS=66V D=50% RG=2.5Ω TJ=125°C TC=75°C 40 20 0 50 100 150 15 20 25 30 200 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 80 10 Gate Resistance (Ohms) 100 Frequency (kHz) tr 50 50 Eon and Eoff (mJ) VDS=66V RG=2.5Ω TJ=125°C L=100µH 200 tr and tf (ns) td(on) and td(off) (ns) 300 1000 TJ=150°C 100 TJ=25°C 10 1 250 ID, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10DUM05TG– Rev 2 January, 2010 VSD, Source to Drain Voltage (V)