CM1800HCB-34N Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts A D L L L S V NUTS (6 TYP) P C C C E E E G F Q C E R U NUTS (3 TYP) T B E CM K G J H W (8 TYP) M N N X C C C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: C £Low Drive Power £Low VCE(sat) £Super-Fast Recovery C G E Free-Wheel Diode £Isolated Baseplate for Easy E E E Heat Sinking Applications: Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 7.48±0.02 190.0±0.5 M 0.51±0.008 13.0±0.2 B 5.51±0.02 140.0±0.5 N 2.42±0.012 61.5±0.3 C P 0.59±0.008 15.0±0.2 D 6.73±0.004 171.0±0.1 Q 1.57±0.012 40.0±0.3 E 4.88±0.004 124.0±0.1 R 0.20±0.008 5.2±0.2 F 1.57±0.008 40.0±0.2 S 1.16±0.02 29.5±0.5 G T H 0.80±0.008 20.25±0.2 U M4 Metric M4 J 1.62±0.012 41.25±0.3 V M8 Metric M8 K 3.13±0.012 79.4±0.3 W L 2.24±0.004 57.0±0.1 X 12/08 1.50+0.04/-0.0 38.0+1.0/-0.0 0.79+0.04/-0.008 20.0+1.0/-0.2 1.10+0.04/-0.0 28.0+1.0/-0.0 0.28±0.004 Dia. 7.0±0.1 Dia. 0.20±0.006 £Traction £Medium Voltage Drives £High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1800HCB-34N is a 1700V (VCES), 1800 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts CM 1800 1700 5.0±0.15 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HCB-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM1800HCB-34N Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Top -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, Tc = 80°C) IC 1800 Amperes ICM 3600* Amperes IE 1800 Amperes Peak Collector Current (Pulse) Diode Forward Current** (Tc = 25°C) Diode Forward Surge Current** (Pulse) IEM 3600* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 150°C) PC 13800 Watts Max. Mounting Torque M8 Terminal Screws – 115 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb Max. Turn-off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 3600 Amperes Short-circuit Capability, Max. Pulse Width (VCC ≤ 1000V, VGE = ±15V, Tj = 125°C) – 10 μs Max. Reverse Recovery Instantaneous Power** – 540 kW – 1.5 kg Viso 4000 Volts (VCC ≤ 1200V, diE/dt ≤ t.b.d A/μs, Tj = 125°C) Module Weight (Typical) V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Top(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol ICES Gate Leakage Current Collector-Emitter Saturation Voltage Min. Typ. Max. Units VCE = VCES, VGE = 0V, Tj = 25°C – – 8.0 mA VCE = VCES, VGE = 0V, Tj = 125°C – – 16.0 mA VGE(th) IC = 180mA, VCE = 10V 5.0 6.0 7.0 Volts IGES VGE = VGES, VCE = 0V – – 0.5 μA Gate-Emitter Threshold Voltage Test Conditions IC = 1800A*, VGE = 15V, Tj = 25°C – 2.0 – Volts VCE(sat) IC = 1800A*, VGE = 15V, Tj = 125°C – 2.2 – Volts Total Gate Charge QG VCC = 900V, IC = 1800A, VGE = 15V – 13.6 – μC Emitter-Collector Voltage** VEC IE = 1800A*, VGE = 0V, Tj = 25°C – 2.35 – Volts IE = 1800A*, VGE = 0V, Tj = 125°C – 1.85 – Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 12/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HCB-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Input Capacitance Cies VCE = 10V , VGE = 0V, Output Capacitance Coes f = 100 kHz Reverse Transfer Capacitance Cres VCE = 10V , VGE = 0V, f = 1 MHz – Resistive Turn-on Delay Time td(on) VCC = 900V, IC = 1800A, – Load Rise Time VGE1 = -VGE2 = 15V, – 0.30 – μs Turn-on Switching Energy Eon RG(on) = 0.7Ω, Tj = 125°C – 390 – mJ/P Switching Turn-off Delay Time td(off) VCC = 900V, IC = 1800A, – 1.60 – μs Times Fall Time tf VGE1 = -VGE2 = 15V, – 0.25 – μs Turn-off Switching Energy Eoff tr Typ. Max. Units – 352 – nF – 19.2 – nF 5.6 – nF 0.95 – μs RG(off) = 1.3Ω, Tj = 125°C – 770 – mJ/P trr VCC = 900V, IE = 1800A, – 1.20 – μs Diode Reverse Recovery Charge* Qrr diE/dt = -7000A/μs, – 900 – μC Reverse Recovery Energy* Erec Tj = 125°C – 480 – mJ/P Test Conditions Min. Typ. Max. Units Diode Reverse Recovery Time* * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 9.0 K/kW Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 13.0 K/kW Rth(c-f) Per Module, Thermal Grease Applied – 7.0 – K/kW CTI – 600 – – – Contact Thermal Resistance, Case to Fin Comparative Tracking Index Clearance – – 19.5 – – mm Internal Inductance LC-E(int) IGBT Part – 10.0 – nH Internal Lead Resistance RC-E(int) IGBT Part – 0.16 – mΩ 12/08 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM1800HCB-34N Single IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts 2.5 2.0 1.5 1.0 0.5 0 500 1000 1500 2000 2500 3000 3500 2.5 2.0 1.5 1.0 0.5 0 0 102 Coes 101 VGE = 0V f = 100kHz Tj = 25°C Cres 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, VGE HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 4000 VCC = 900V VGE = ±15V RG(on) = 0.7Ω RG(off) = 1.7Ω LS = 100nH Tj = 125°C Inductive Load 8 4 1400 1200 1000 800 600 400 Eon Eoff 200 4 8 12 16 0 20 0 4000 VCC = 900V VGE = ±15V IC = 1800A LS = 100nH Tj = 125°C dv/dt(off) = 20-80% Inductive Load 3500 SWITCHING ENERGY, (mJ/P) 1600 12 3000 2500 2000 3500 3000 2500 2000 1500 1500 1000 1000 Eon Eoff 500 0 500 1000 1500 2000 2500 3000 0 1 2 3 4 GATE CHARGE, QG, (µC) COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY SWITCHING ENERGY VS. GATE RESISTANCE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDI) 8000 800 600 400 200 0 500 1000 1500 2000 2500 3000 EMITTER CURRENT, IE, (AMPERES) 600 500 400 7000 5000 4000 3000 200 2000 100 1000 0 1 2 3 4 GATE RESISTANCE, RG, (Ω) 1.0 6000 300 0 1.2 5 0 − dv/dt(rec), (V/µs) 800 VCC = 900V VGE = ±15V IC = 1800A LS = 100nH Tj = 125°C dv/dt(off) = 20-80% Inductive Load 700 SWITCHING ENERGY, (mJ/P) VCC = 900V VGE = ±15V RG(on) = 0.7Ω LS = 100nH Tj = 125°C 1000 0 Cies 100 10-1 500 1000 1500 2000 2500 3000 3500 1800 0 103 EMITTER CURRENT, IE, (AMPERES) 1200 REVERSE RECOVERY ENERGY, Erec, (mJ/PULSE) 3.0 COLLECTOR CURRENT, IC, (AMPERES) IC = 1800A VCC = 900V Tj = 25°C 16 0 4 3.5 TRANSIENT IMPEDANCE, Rth(j-c) 0 VGE = 15V Tj = 25°C Tj = 125°C 0.8 500 5 0 SINGLE PULSE TC = 25°C IGBT = Rth(j-c)Q = 9°K/kW FWDI = Rth(j-c)D = 13°K/kW 0.6 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) 12/08 − dv/dt(off), (V/µs) 3.0 104 4.0 CAPACITANCE, Cies, Coes, Cres, (pF) VGE = 15V Tj = 25°C Tj = 125°C 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 4.0 3.5 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) SWITCHING ENERGY, (mJ/P) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)