QID0640020 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ NX-Series Module 400 Amperes/600 Volts A D E J F J G Y (4 PLACES) AD AE AF H 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M L 2 3 4 5 6 7 8 N K AG 9 10 11 12 13 14 15 16 17 18 19 20 21 22 P K L DETAIL "A" AL AM AK AT AU E1C2(24) E1C2(23) Tr2 Di2 Di1 C1(22) E1(16) Tr1 DETAIL "B" AN G1(15) G2(38) E2(39) AX C AR AS AP AV AW AJ AH AC (4 PLACES) AQ DETAIL "A" E2 (47) C1 (48) Th NTC TH1 (1) *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 TH2 (2) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y 04/10 Rev. 0 Inches Millimeters Dimensions 5.98 2.44 0.67 5.39 4.79 4.33±0.02 3.89 3.72 0.53 0.15 0.28 0.30 1.95 0.9 0.55 0.87 0.67 0.48 0.24 0.16 0.37 0.83 M6 152.0 62.0 17.0 137.0 121.7 110.0±0.5 99.0 94.5 13.5 3.8 7.25 7.75 49.54 22.86 14.0 22.0 17.0 12.0 6.0 4.2 6.5 21.14 M6 Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX Inches Millimeters 1.53 39.0 1.97±0.02 50.0±0.5 2.26 57.5 0.22 Dia. 5.5 Dia. 0.67+0.04/-0.0217.0+1.0/-0.5 0.51 13.0 0.27 7.0 0.03 0.8 0.81 20.5 0.12 3.0 0.14 3.5 0.21 5.4 0.49 12.5 0.15 3.81 0.05 1.15 0.025 0.65 0.29 7.4 0.24 6.2 0.17 Dia. 4.3 Dia. 0.10 Dia. 2.5 Dia. 0.08 Dia. 2.1 Dia. 0.06 1.5 0.49 12.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ AlSiC Baseplate £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID0640020 Dual IGBTMOD™ NX-Series Module 400 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Power Device Junction Temperature QID0640020 Units Tj -40 to 150 °C Tstg -55 to 130 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb Module Weight (Typical) — 220 Grams Baseplate Flatness, On Centerline X, Y (See Below) — ±0 ~ +100 µm VISO 2500 Volts Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) Storage Temperature Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Inverter Sector VGES ±20 Volts Collector Current (TC = 60°C)*1 IC 400 Amperes Peak Collector Current (Pulse)*3 ICM 800 Amperes Emitter Current (TC = 25°C)*1*4 IE*2 400 Amperes IEM*2 800 Amperes PC 1115 Watts Peak Emitter Current (Pulse)*3 Maximum Collector Dissipation (TC = 25°C)*1*4 *1 *2 *3 *4 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Junction temperature (Tj) should not increase beyond Tj(max) rating. BASEPLATE FLATNESS MEASUREMENT POINT CHIP LOCATION (TOP VIEW) NTC Thermistor 43.2 Y FWDi 0 IGBT 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 X – : CONCAVE 21.5 47 24 Th 32.0 30.0 48 23 2 3 4 5 6 7 8 43.6 9 10 11 12 13 14 15 16 17 18 19 20 21 22 36.3 0 1 29.6 + : CONVEX HEATSINK SIDE 21.5 78.6 + : CONVEX HEATSINK SIDE – : CONCAVE Chip Location (Top View) Dimensions in mm (Tolerance: ±1mm) 2 04/10 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID0640020 Dual IGBTMOD™ NX-Series Module 400 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 40mA, VCE = 10V 5 6 7 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C*5 — 1.7 2.1 Volts IC = 400A, VGE = 15V, Tj = 125°C*5 — 1.9 — Volts IC = 400A, VGE = 15V, Chip — 1.6 — Volts — — 50.0 nF — — 5.3 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V — — 1.6 nF VCC = 300V, IC = 400A, VGE = 15V — 1100 — nC — — 200 ns VCC = 300V, IC = 400A, — — 200 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = ±15V, — — 400 ns Time Turn-off Fall Time tf RG = 3.6Ω, IE = 400A, — — 600 ns Reverse Recovery Time trr*2 Inductive Load Switching Operation — — 200 ns Reverse Recovery Charge Qrr*2 — 11 — µC Emitter-Collector Voltage VEC*2 IE = 400A, VGE = 0V *5 — 2.0 2.8 Volts IE = 400A, VGE = 0V*5 — 1.9 — Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Module Lead Resistance Symbol Test Conditions Min. Typ. Max. Units Rlead Main Termnals-Chip (Per Switch) — 1.1 — mΩ IGBT*1 Thermal Resistance, Junction to Case** Rth(j-c)Q Per — — 0.112 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi*1 — — 0.192 °C/W Rth(c-f) Case to Heatsink (Per 1 Module) — 0.015 — °C/W Contact Thermal Resistance** Thermal Grease Applied*1*7 Internal Gate Resistance RGint External Gate Resistance RG TC = 25°C — 0 — Ω 1.6 — 16 Ω Min. Typ. Max. Units 4.85 5.00 5.15 kΩ –7.3 — +7.8 % — 3375 — K — — 10 mW NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Zero Power Resistance R Deviation of Resistance ∆R/R B Constant Power Dissipation B(25/50) P25 Test Conditions TC = 25°C*1 TC = 100°C, R100 = 493Ω*1 )*6 B = (InR1 – InR2) / (1/T1 – 1/T2 TC = 25°C*1 **Thermal resistance values are per 1 element. *1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip. *2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *6 R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = T(°C) + 273.15 *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 04/10 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID0640020 Dual IGBTMOD™ NX-Series Module 400 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) VGE = 20V 3.5 Tj = 25°C 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 13 600 11 400 200 10 8 9 0 2 4 6 8 1.0 0.5 0 200 400 600 IC = 800A 6 IC = 400A 4 IC = 160A 2 0 800 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 Tj = 25°C Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 1.5 8 COLLECTOR-CURRENT, IC, (AMPERES) 102 0 1 2 3 Coes 100 Cres 100 101 102 tf 103 td(off) td(on) 102 101 101 tr 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 103 td(on) 102 101 100 tr VCC = 300V VGE = ±15V IC = 400A Tj = 125°C Inductive Load 101 GATE RESISTANCE, RG, (Ω) 102 REVERSE RECOVERY, Irr (A), trr (ns) tf 20 VCC = 300V VGE = ±15V RG = 3.6Ω Tj = 25°C Inductive Load 102 101 101 Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 20 VCC = 300V VGE = ±15V RG = 3.6Ω Tj = 125°C Inductive Load Cies 101 10-1 10-1 4 104 VGE = 0V EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(off) SWITCHING TIME, (ns) 2.0 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 4 2.5 0 10 103 101 3.0 SWITCHING TIME, (ns) 0 10 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) IC = 400A 16 VCC = 200V VCC = 300V 12 8 4 0 0 400 800 1200 1600 GATE CHARGE, QG, (nC) 04/10 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID0640020 Dual IGBTMOD™ NX-Series Module 400 Amperes/600 Volts 100 101 102 103 102 101 VCC = 300V VGE = ±15V IC = 400A Tj = 125°C Inductive Load Eon Eoff 100 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V IE = 400A Tj = 125°C Inductive Load NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 100 10-1 101 10-2 Err 100 100 101 GATE RESISTANCE, RG, (Ω) 04/10 Rev. 0 102 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-1 100 VCC = 300V VGE = ±15V RG = 3.6Ω Tj = 125°C Inductive Load 101 Err 100 101 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 102 VCC = 300V VGE = ±15V RG = 3.6Ω Tj = 125°C Inductive Load Eon Eoff SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.093°C/W (IGBT) Rth(j-c) = 0.16°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 5