POWEREX QID1230015

QID1230015
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
NX-Series Module
300 Amperes/1200 Volts
A
D
E
J
F
J
G
Y
(4 PLACES)
AD
AE
AF
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
ST
47
U
24
Z
R
S T
Q
48
U
AA B
AB
23
DETAIL "B"
1
W
V
X
M
L
2
3
4
5
6
7
8
N
K
AG
9 10 11 12 13 14 15 16 17 18 19 20 21 22
K
P
L
DETAIL "A"
AL
AM
AK
AT
AU
E1C2(24) E1C2(23)
Tr2
Di2
Di1
C1(22)
E1(16)
Tr1
DETAIL "B"
AN
G1(15)
G2(38)
E2(39)
AX
C
AR
AS
AP
AV
AW
AJ
AH
AC (4 PLACES)
AQ
DETAIL "A"
E2
(47)
C1
(48)
Th
NTC
TH1
(1)
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
TH2
(2)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
04/10 Rev. 0
Inches
Millimeters
Dimensions
5.98
2.44
0.67
5.39
4.79
4.33±0.02
3.89
3.72
0.53
0.15
0.28
0.30
1.95
0.9
0.55
0.87
0.67
0.48
0.24
0.16
0.37
0.83
M6
152.0
62.0
17.0
137.0
121.7
110.0±0.5
99.0
94.5
13.5
3.8
7.25
7.75
49.54
22.86
14.0
22.0
17.0
12.0
6.0
4.2
6.5
21.14
M6
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
Inches
Millimeters
1.53
39.0
1.97±0.02
50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.0217.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.24
6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ AlSiC Baseplate
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Power Device Junction Temperature
QID1230015
Units
Tj
-40 to 150
°C
Tstg
-55 to 130
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Storage Temperature
Module Weight (Typical)
—
220
Grams
VISO
2500
Volts
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
300
Amperes
ICM
600
Amperes
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Inverter Sector
Collector Current (TC = 90°C)*
Peak Collector Current**
Emitter Current (TC = 25°C, Tj < 150°C)* Peak Emitter Current (Tj < 150°C)**
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)*
IE***
300
Amperes
IEM***
600
Amperes
PC
1580
Watts
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
97.1
83.6
NTC Thermistor
39.4
FWDi
0
IGBT
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
17.3
47
24
26.5
30.8
30.8
37.4
Th
40.0
48
23
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
97.1
4
83.6
3
34.0
2
28.5
1
0
17.3
Dimensions in mm (Tolerance: ±1mm)
2
04/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 30mA, VCE = 10V
6
7
8
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat)
IC = 300A, VGE = 15V, Tj = 25°C
—
2.0
2.6
Volts
IC = 300A, VGE = 15V, Tj = 125°C
—
2.2
—
Volts
IC = 300A, VGE = 15V, Chip
—
1.9
—
Volts
—
—
47.0
nF
—
—
4.0
nF
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCE = 10V, VGE = 0V
—
—
0.9
nF
VCC = 600V, IC = 300A, VGE = 15V
—
1350
—
nC
—
—
550
ns
VCC = 600V, IC = 300A,
—
—
180
ns
Inductive
Turn-on Delay Time
td(on)
Load
Turn-on Rise Time
tr
Switch
Turn-off Delay Time
td(off)
VGE = ±15V,
—
—
600
ns
Time
Turn-off Fall Time
tf
RG = 1.0Ω, IE = 300A,
—
—
600
ns
Inductive Load Switching Operation
—
—
250
ns
—
8.0
—
µC
IE = 300A, VGE = 0V
—
2.6
3.4
Volts
IE = 300A, VGE = 0V, Chip
—
2.5
—
Volts
Reverse Recovery Time*
trr
Reverse Recovery Charge*
Qrr
Emitter-Collector Voltage*
VEC
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rlead
Main Termnals-Chip (Per Switch)
—
1.2
—
mΩ
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per IGBT
—
—
0.079
°C/W
Thermal Resistance, Junction to Case**
Rth(j-c)D
Per FWDi
—
—
0.144
°C/W
Contact Thermal Resistance**
Rth(c-f)
Thermal Grease Applied
—
0.015
—
°C/W
Internal Gate Resistance
RGint
TC = 25°C
2.1
3.0
3.9
Ω
TC = 125°C
4.2
6.0
7.8
Ω
External Gate Resistance
RG
1.0
—
10
Ω
Test Conditions
Min.
Typ.
Max.
Units
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Zero Power Resistance
R
TC = 25°C
4.85
5.00
5.15
kΩ
Deviation of Resistance
∆R/R
TC = 100°C, R100 = 493Ω
–7.3
—
+7.8
%
B(25/50)
B(25/50) = In(R25 / R50) / (1/T25 – 1/T50)***
—
3375
—
K
P25
TC = 25°C
—
—
10
mW
B Constant
Power Dissipation
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.
***R25: Resistance at Absolute Temperature T25(K), R50: Resistance at Absolute Temperature T50(K),
T25 = 25(°C) +273.15 = 298.15(K), T50 = 50(°C) + 273.15 = 323.15(K)
04/10 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
600
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
12
300
11
200
100
10
9
0
2
4
6
8
200
300
400
500
IC = 600A
6
IC = 300A
4
IC = 120A
2
0
600
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
Tj = 125°C
102
0
1
2
3
103
VGE = 0V
tf
Cies
Coes
101
100
102
tr
101
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Cres
100
101
102
100
101
102
103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
td(on)
103
td(off)
tr
102
101
10-1
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
100
GATE RESISTANCE, RG, (Ω)
101
20
td(off)
td(on)
102
10-1
10-1
4
REVERSE RECOVERY, Irr (A), trr (ns)
EMITTER CURRENT, IE, (AMPERES)
100
0
8
COLLECTOR-CURRENT, IC, (AMPERES)
tf
SWITCHING TIME, (ns)
1
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
4
2
0
10
103
101
3
SWITCHING TIME, (ns)
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
20
102
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive Load
Irr
trr
101
100
101
102
EMITTER CURRENT, IE, (AMPERES)
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
500
400
4
Tj = 25°C
15
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
IC = 300A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
500
1000
1500
2000
GATE CHARGE, QG, (nC)
04/10 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1230015
Dual IGBTMOD™ NX-Series Module
300 Amperes/1200 Volts
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
Eon
Eoff
100
101
102
103
102
VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
Eon
Eoff
101
100
100
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 600V
VGE = ±15V
IE = 300A
Tj = 125°C
Inductive Load
100
100
100
10-1
10-2
Err
101
GATE RESISTANCE, RG, (Ω)
04/10 Rev. 0
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
101
102
102
10-3
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-2
10-1
100
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
101
100
101
Err
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
103
102
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.066°C/W
(IGBT)
Rth(j-c) =
0.12°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
5