Single Phase Half Controlled Bridges with freewheeling diode PSCH 75 ITAVM VRRM = 74 A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSCH 75/04 PSCH 75/08 PSCH 75/12 PSCH 75/14 PSCH 75/16 ~ ~ * Delivery on request Symbol Test Conditions ITAVM, IFSM, ITSM TC = 85 °C TVJ = 45°C VR = 0 per module t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 74 1150 1230 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 A2 s A2 s TVJ = TJVM repetitive, IT = 150 A f = 50Hz, tP = 200µs VD = 2/3 VDRM 100 A/µs IG = 0.3 A non repetitive, IT = ITAVM diG/dt = 0.3 A/µs 500 A/µs 1000 V/µs 10 5 0.5 W W W 10 -40 ... + 125 125 -40 ... + 125 V °C °C °C 2500 3000 V∼ V∼ 5 1.5 5 Nm Nm Nm 220 g ∫ i2 dt (di/dt)cr Maximum Ratings (dv/dt)cr TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM PGAVM VRGM TVJ TVJM Tstg VISOL 50/60 HZ, RMS IISOL ≤ 1 mA tP = 30µs tP = 300µs t = 1 min t=1s Md Mounting torque Terminal connection torque Weight typ. POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 (M5) (M3) (M5) Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL registered, E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 75 Symbol Test Conditions ID, IR VT VTO rT VGT TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT = 150A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) Characteristic Value 5 1.57 0.85 5,33 mA V V mΩ VD = 6V TVJ = 25°C TVJ = -40°C ≤ ≤ 1.0 1.6 V V IGT VD = 6V TVJ = 25°C TVJ = -40°C ≤ ≤ 100 150 mA mA VGD IGD IL TVJ = TVJM TVJ = TVJM VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ 0.2 5 V mA TVJ = 25°C, tP = 10µs IG = 0.3A, diG/dt = 0.3A/µs ≤ 200 mA IH tgd TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.3A, diG/dt = 0.3A/µs ≤ ≤ 150 2 mA tq TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM 150 µs RthJC per thyristor; sine 180°el per module 0.66 0.132 K/W K/W RthJK per thyristor; sine 180° el per module 0.93 0.186 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 8.0 4.5 50 mm mm m/s2 µs 300 1:TVJ= 125°C [A] 250 2:TVJ= 25°C T VJ I T(OV) -----ITSM =25°C ITSM (A) TVJ=45°C us 1.6 200 100 150 tgd 100 10 TVJ=150°C 1150 1000 1.4 1.2 1 0 VRRM 0.8 1/2 VRRM 50 IF 1 0 0.5 1 VF[V] 0.6 1 VRRM 2 1.5 2 Fig. 1 Forward current vs. voltage drop per diode or thyristor POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 1 10 100 I [mA] G 0.4 1000 Fig. 2 Gate trigger delay time 10 0 10 1 t[ms] 10 2 10 3 Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSCH 75 10 80 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W V DC [A] sin.180° rec.120° rec.60° 60 rec.30° 6 1 40 5 4 VG 20 3 2 ITAV 1 0 50 0.1 10 0 10 1 10 2 IG 10 3 10 4 mA Fig.4 Gate trigger characteristic 100 150 200 T (°C) C Fig.5 Maximum forward current at case temperature K/W Z 1 0.8 thJK Z thJC 0.6 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 300 [W] 75 PSCH 75 TC 0.17 0.09 250 80 = RTHCA [K/W] 85 0.25 90 200 95 0.39 150 100 105 0.67 100 DC sin.180° rec.120° rec.60° rec.30° 50 PVTOT 0 110 1.5 115 120 °C 125 10 30 ITAVM 50 70 0 [A] Tamb 50 100 [K] 150 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions