TI SN74SSQEA32882

SN74SSQEA32882
www.ti.com...................................................................................................................................................................................................... SCAS879 – JUNE 2009
28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS PARITY TEST
ONE PAIR TO FOUR PAIR DIFFERENTIAL CLOCK PLL DRIVER
FEATURES
1
•
•
•
•
•
•
•
•
JEDEC SSTE32882 Compliant
1-to-2 Register Outputs and 1-to-4 Clock Pair
Outputs Support Stacked DDR3 DIMMs
CKE Powerdown mode for optimized system
power consumption
1.5V/1.35V Phase Lock Loop Clock Driver
Buffers One Differential Clock Pair (CK and
CK) and Distributes to Four Differential
Outputs
1.5V/1.35V CMOS Inputs
Checks Parity on Command and Address
(CS-gated) Data Inputs
Supports Four Chip Selects
Configurable Driver Strength
APPLICATIONS
•
•
•
DDR3 Registered DIMMs up to DDR3-1600
DDR3L Registered DIMMs up to DDR3L-1333
Single-, Dual- and Quad-Rank RDIMM
DESCRIPTION/ORDERING INFORMATION
This JEDEC SSTE32882-compliant, 28-bit 1:2 or
26-bit 1:2 and 4-bit 1:1 registering clock driver with
parity is designed for operation on DDR3 registered
DIMMs with with VDD of 1.5 V and on DDR3L
registered DIMMs with VDD of 1.35 V.
The
SN74SSQEA32882
implements
different
power-saving mechanisms to reduce thermal power
dissipation and to support system power-down states.
Power consumption is further reduced by disabling
unused outputs.
All inputs are 1.5V and 1.35V CMOS-compatible. All
outputs are optimized to drive DRAM signals on
terminated traces in DDR3 RDIMM applications.
Clock outputs Yn and Yn and control net outputs
DxCKEn, DxCSn, and DxODTn can each be driven
with a different strength and skew to optimize signal
integrity, compensate for different loading, and
balance signal travel speed.
The SN74SSQEA32882 has two basic modes of
operation associated with the Quad Chip Select
Enable (QCSEN) input.
First, when the QCSEN input pin is open or pulled
high, the component has two chip select inputs,
DCS0 and DCS1, and two copies of each chip select
output, QACS0, QACS1, QBCS0 and QBCS1. This
mode is the QuadCS disabled mode. Alternatively,
when the QCSEN input pin is pulled low, the
component has four chip select inputs DCS[3:0], and
four chip select outputs, QCS[3:0]. This mode is the
QuadCS enabled mode.
When QCSEN is high or floating, the device also
supports an operating mode that allows a single
device to be mounted on the back side of a DIMM
array. This device can then be configured to keep the
input bus termination (IBT) feature enabled for all
input signals independent of MIRROR. The
SN74SSQEA32882. operates from a differential clock
(CK and CK). Data are registered at the crossing of
CK going high and CK going low. This data can either
be re-driven to the outputs or used to access internal
control registers. Details are covered in the Function
Tables (each flip-flop) with QCSEN = low.
Input bus data integrity is protected by a parity
function. All address and command input signals are
summed; the last bit of the sum is then compared to
the parity signal delivered by the system at the
PAR_IN input one clock cycle later. If these two
values do not match, the device pulls the open drain
output ERROUT low. The control signals (DCKE0,
DCKE1, DODT0, DODT1, and DCS[n:0]) are not part
of this computation.
The package design is optimal for high-density
DIMMs. By aligning input and output positions
towards DIMM finger-signal ordering and SDRAM
ballout, the device de-scrambles the DIMM traces
and allows low crosstalk designs with low
interconnect latency. Edge-controlled outputs reduce
ringing and improve signal eye opening at the
SDRAM inputs.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
SN74SSQEA32882
SCAS879 – JUNE 2009...................................................................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION (1)
0°C - Tcase
(see Table 1)
(1)
(2)
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
SN74SSQEA32882ZALR
EA32882B
PACKAGE (2)
TCASE
176ZAL
Tape and Reel
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range (unless otherwise noted).
(1)
PARAMETER
VDD
Supply voltage
VI
Receiver input voltage
VREF
Reference voltage
VO
Driver output voltage
See
IIK
Input clamp current
IOK
IO
ICCC
Continuous current through each VDD or GND pin
Tstg
Storage temperature
(1)
(2)
(3)
See
(2)
(2)
and
and
(3)
(3)
VALUE
UNIT
–0.4 to +1.975
V
–0.4 to VDD + 0.5
V
–0.4 to VDD + 0.5
V
–0.4 to VDD + 0.5
V
VI < 0 or VI > VDD
–50
mA
Output clamp current
VO < 0 or VO > VDD
±50
mA
Continuous output current
0 < VO < VDD
±50
mA
±100
mA
–65 to +150
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under operating conditions is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 2.2 V maximum.
Table 1. Case Temperature vs Speed Node
PARAMETER
Tcase
(1)
2
Maximum case temperature
(1)
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
UNIT
+109
+108
+106
+103
°C
The temperature values fit to JEDEC RAW cards A, B, and C. The user must keep Tcase below the specified values in order to keep the
junction temperature below +125°C. Other combinations of features and termination resistors can require lower case temperature and
extra cooling. These combinations depend on the specific application.
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Copyright © 2009, Texas Instruments Incorporated
SN74SSQEA32882
www.ti.com...................................................................................................................................................................................................... SCAS879 – JUNE 2009
PACKAGE INFORMATION
ZAL Package
The package is an 8-mm × 13.5-mm, 176-pin ball grid array (BGA) with 0.65-mm ball pitch in an 11 × 20 grid.
The device pinout supports outputs on the outer two left and right columns to support easy DIMM signal routing.
Corresponding inputs are placed in such a way that two devices can be placed back-to-back for four rank
modules while the data inputs share the same vias. Each input and output is located close to an associated
no-ball position or on the outer two rows to allow for low-cost via technology combined with the small, 0.65-mm
ball pitch.
1
2
3
4
5
6
7
8
9
10 11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
NOTE:
To request more information on SN74SSQEA32882 DDR3 Register/PLL please
contact [email protected] .
Copyright © 2009, Texas Instruments Incorporated
Submit Documentation Feedback
3
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jul-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
SN74SSQEA32882ZALR
ACTIVE
BGA
ZAL
Pins Package Eco Plan (2)
Qty
176
1000 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
SNAGCU
MSL Peak Temp (3)
Level-3-260C-168 HR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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