Product Specification PE42521 UltraCMOS® SPDT RF Switch 9 kHz - 13 GHz Product Description The PE42521 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through 13 GHz. This switch is a pin-compatible upgraded version of PE42552 with fast switching time and higher power handling of 36 dBm continuous wave (CW) and 38.5 dBm instantaneous power in 50Ω @ 4 GHz. The PE42521 exhibits high isolation, fast settling time, and is offered in a 3x3 mm QFN package. The PE42521 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Features HaRP™ technology enhanced Fast settling time of 2 s No gate and phase lag No drift in insertion loss and phase Fast switching time of 500 ns High power handling @ 4 GHz in 50Ω 36 dBm CW 38.5 dBm instantaneous power 26 dBm terminated port High linearity 65 dBm IIP3 Low insertion loss 0.75 dB @ 3 GHz 1.15 dB @ 10 GHz Figure 1. Functional Diagram 1.85 dB @ 13 GHz High isolation 44 dB @ 3 GHz 30 dB @ 10 GHz 17 dB @ 13 GHz ESD performance 3kV HBM on RF pins to GND 1.5kV HBM on all pins 1kV CDM on all pins DOC-50572 Document No. DOC-12814-3 | www.psemi.com Figure 2. Package Type 16-lead 3x3 mm QFN ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 16 PE42521 Product Specification Table 1. Electrical Specifications @ 25°C, VDD = 3.3V, VssEXT = 0V or VDD = 3.4V, VssEXT = -3.4V, (ZS = ZL = 50Ω) unless otherwise noted Parameter Path Condition Min Operation frequency Typ 9 kHz Unit 13 GHz As shown 0.80 1.00 1.20 1.40 2.20 2.60 dB dB dB dB dB dB RFC–RFX 9 kHz – 10 MHz 10 MHz – 3 GHz 3 GHz – 7.5 GHz 7.5 GHz – 10 GHz 10 GHz – 12 GHz 12 GHz – 13 GHz RFX–RFX 9 kHz – 10 MHz 10 MHz – 3 GHz 3 GHz – 7.5 GHz 7.5 GHz – 10 GHz 10 GHz – 12 GHz 12 GHz – 13 GHz 70 46 35 23 16 14 90 49 37 26 19 17 dB dB dB dB dB dB RFC–RFX 9 kHz – 10 MHz 10 MHz – 3 GHz 3 GHz – 7.5 GHz 7.5 GHz – 10 GHz 10 GHz – 12 GHz 12 GHz – 13 GHz 80 42 39 26 18 14 90 44 41 30 21 17 dB dB dB dB dB dB RFC-RFX 9 kHz – 10 MHz 10 MHz – 3 GHz 3 GHz – 7.5 GHz 7.5 GHz – 10 GHz 10 GHz – 12 GHz 12 GHz – 13 GHz 23 19 16 21 10 15 dB dB dB dB dB dB RFC-RFX 9 kHz – 10 MHz 10 MHz – 3 GHz 3 GHz – 7.5 GHz 7.5 GHz – 10 GHz 10 GHz – 12 GHz 12 GHz – 13 GHz 23 19 16 21 10 16 dB dB dB dB dB dB RFX 9 kHz – 10 MHz 10 MHz – 3 GHz 3 GHz – 7.5 GHz 7.5 GHz – 10 GHz 10 GHz – 12 GHz 12 GHz – 13 GHz 32 23 18 11 6 5 dB dB dB dB dB dB Input 0.1 dB compression point1 RFC–RFX 600 MHz – 13 GHz Fig. 5 dBm Input IP2 RFC–RFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFC–RFX 834 MHz, 1950 MHz, and 2700 MHz 65 dBm Settling time 50% CTRL to 0.05 dB final value 2 4 μs Switching time 50% CTRL to 90% or 10% of final value 500 700 ns Insertion loss Isolation Isolation Return loss (active port) Return loss (common port) Return loss (terminated port) 0.60 0.75 0.95 1.15 1.75 1.85 Max Note 1: The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power PIN (50Ω) ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 16 Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions PE42521 Product Specification Figure 3. Pin Configuration (Top View) Table 3. Operating Ranges Parameter Table 2. Pin Descriptions Pin # Pin Name 2 RF11 RF port 1 1, 3, 4, 5, 6, 8, 9, 10, 12 GND Ground 7 RFC1 RF common 11 Description RF2 2 RF port 2 13 VssEXT External Vss negative voltage control 14 CTRL Digital control logic input 15 LS Logic Select - used to determine the definition for the CTRL pin (see Table 5) 16 VDD Supply voltage Pad GND Notes: Exposed pad: ground for proper operation 1. RF pins 2, 7, and 11 must be at 0V DC. The RF pins do not require DC blocking capacitors for proper operation if the 0V DC requirement is met 2. Use VssEXT (pin 13) to bypass and disable internal negative voltage generator. Connect VssEXT (pin 13) to GND (VssEXT = 0V) to enable internal negative voltage generator Min Typ Max Unit 5.5 V 5.5 V -3.2 V Supply voltage (normal mode, VssEXT = 0V)1 VDD 2.3 Supply voltage (bypass mode, VssEXT = -3.4V, VDD ≥ 3.4V for full spec. compliance)2 VDD 2.7 Negative supply voltage (bypass mode)2 VssEXT -3.6 Supply current (normal mode, VssEXT = 0V)1 IDD 120 200 µA Supply current (bypass mode, VssEXT = -3.4V)2 IDD 50 80 µA Negative supply current (bypass mode, VssEXT = -3.4V)2 ISS -40 Digital input high (CTRL) VIH 1.17 3.6 V Digital input low (CTRL) VIL -0.3 0.6 V ICTRL 10 µA PIN-CW Fig. 4 36 Fig. 5 dBm dBm dBm RF input power, pulsed (RFC-RFX)4 P 9 kHz ≤ 600 MHz IN-PULSED 600 MHz ≤ 13 GHz Fig. 4 Fig. 5 dBm dBm RF input power, hot switch, CW3 9 kHz ≤ 10 MHz 10 MHz ≤ 13 GHz PIN-HOT Fig. 4 20 dBm dBm RF input power into terminated ports, CW (RFX)3 9 kHz ≤ 30 MHz 30 MHz ≤ 13 GHz PIN,TERM Fig. 4 26 dBm dBm +85 °C Digital input current 1 Symbol RF input power, CW (RFC-RFX)3 9 kHz ≤ 600 MHz 600 MHz ≤ 4 GHz 4 GHz ≤ 13 GHz Operating temperature range TOP -40 3.4 -16 +25 µA Notes: 1. Normal mode: connect VssEXT (pin 13) to GND (VssEXT = 0V) to enable internal negative voltage generator 2. Bypass mode: use VssEXT (pin 13) to bypass and disable internal negative voltage generator 3. 100% duty cycle, all bands, 50Ω 4. Pulsed, 5% duty cycle of 4620 µs period, 50Ω Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 16 PE42521 Product Specification Table 4. Absolute Maximum Ratings Parameter/Condition Supply voltage Digital input voltage (CTRL) LS input voltage RF input power, CW (RFC-RFX)1 9 kHz ≤ 600 MHz 600 MHz ≤ 4 GHz 4 GHz ≤ 13 GHz Symbol Min Max Unit VDD -0.3 5.5 V VCTRL -0.3 3.6 V VLS -0.3 3.6 V Fig. 4 36 Fig. 5 dBm dBm dBm Fig. 4 Fig. 5 dBm dBm PIN-CW RF input power, pulsed (RFC-RFX)2 PIN-PULSED 9 kHz ≤ 600 MHz 600 MHz ≤ 13 GHz RF input power into terminated ports, CW (RFX)1 9 kHz ≤ 30 MHz 30 MHz ≤ 13 GHz Storage temperature range Switching Frequency The PE42521 has a maximum 25 kHz switching rate when the internal negative voltage generator is used (pin 13 = GND). The rate at which the PE42521 can be switched is only limited to the switching time (Table 1) if an external negative supply is provided (pin 13 = VssEXT). Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reaches 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. Optional External Vss Control (VssEXT) PIN,TERM TST -65 Fig. 4 26 dBm dBm +150 °C 3 ESD voltage HBM RF pins to GND All pins VESD,HBM 3000 1500 V V ESD voltage MM4, all pins VESD,MM 200 V ESD voltage CDM5, all pins VESD,CDM 1000 V Notes: 1. 100% duty cycle, all bands, 50Ω 2. Pulsed, 5% duty cycle of 4620 µs period, 50Ω 3. Human Body Model (MIL-STD 883 Method 3015) 4. Machine Model (JEDEC JESD22-A115) 5. Charged Device Model (JEDEC JESD22-C101) Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. For proper operation, the VssEXT control pin must be grounded or tied to the Vss voltage specified in Table 3. When the VssEXT control pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applications that require the lowest possible spur performance, VssEXT can be applied externally to bypass the internal negative voltage generator. Spurious Performance The typical spurious performance of the PE42521 is -152 dBm when VssEXT = 0V (pin 13 = GND). If further improvement is desired, the internal negative voltage generator can be disabled by setting VssEXT = -3.4V. Table 5. Control Logic Truth Table LS CTRL RFC-RF1 RFC-RF2 0 0 off on Electrostatic Discharge (ESD) Precautions 0 1 on off When handling this UltraCMOS® device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified. 1 0 on off 1 1 off on Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS® devices are immune to latch-up. ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 16 Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42521 in the 16-lead 3x3 mm QFN package is MSL3. Logic Select (LS) The Logic Select feature is used to determine the definition for the CTRL pin. Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions PE42521 Product Specification Figure 4. Power De-rating Curve for 9 kHz – 600 MHz (50Ω) 40 35 30 Input Power (dBm) Max. RF Input Power, CW and Pulsed, (‐40°C to +85°C Ambient) 25 20 15 10 5 0 1 10 100 1000 10000 100000 Frequency (kHz) Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 16 PE42521 Product Specification Figure 5a. Power De-rating Curve for 600 MHz – 13 GHz @ 25°C Ambient (50Ω) 40 P0.1dB Compression @ 25°C Ambient 39.5 Max. RF Input Power, Pulsed @ 25°C Ambient 39 38.5 Max. RF Input Power, CW @ 25°C Ambient 38 Input Power (dBm) 37.5 37 36.5 36 35.5 35 34.5 34 33.5 33 0 0.1 1 2 3 4 5 6 7 Frequency (GHz) 8 9 10 11 12 13 Figure 5b. Power De-rating Curve for 600 MHz – 13 GHz @ 85°C Ambient (50Ω) 40 P0.1dB Compression @ 85°C Ambient 39.5 Max. RF Input Power, Pulsed @ 85°C Ambient 39 Max. RF Input Power, CW @ 85°C Ambient 38.5 38 Input Power (dBm) 37.5 37 36.5 36 35.5 35 34.5 34 33.5 33 0 0.1 1 2 3 4 5 6 7 Frequency (GHz) ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 16 8 9 10 11 12 Document No. DOC-12814-3 | 13 UltraCMOS® RFIC Solutions PE42521 Product Specification Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified Figure 6. Insertion Loss vs. Temp (RFC–RF1) Figure 7. Insertion Loss vs. VDD (RFC–RF1) Figure 8. Insertion Loss vs. Temp (RFC–RF2) Figure 9. Insertion Loss vs. VDD (RFC–RF2) Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 16 PE42521 Product Specification Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified Figure 10. RFC Port Return Loss vs. Temp (RF1 Active) Figure 11. RFC Port Return Loss vs. VDD (RF1 Active) Figure 12. RFC Port Return Loss vs. Temp (RF2 Active) Figure 13. RFC Port Return Loss vs. VDD (RF2 Active) ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 16 Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions PE42521 Product Specification Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified Figure 14. Active Port Return Loss vs. Temp (RF1 Active) Figure 15. Active Port Return Loss vs. VDD (RF1 Active) Figure 16. Active Port Return Loss vs. Temp (RF2 Active) Figure 17. Active Port Return Loss vs. VDD (RF2 Active) Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 9 of 16 PE42521 Product Specification Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified Figure 18. Terminated Port Return Loss vs. Temp (RF1 Active) Figure 19. Terminated Port Return Loss vs. VDD (RF1 Active) Figure 20. Terminated Port Return Loss vs. Temp (RF2 Active) Figure 21. Terminated Port Return Loss vs. VDD (RF2 Active) ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 10 of 16 Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions PE42521 Product Specification Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified Figure 22. Isolation vs. Temp (RF1–RF2, RF1 Active) Figure 23. Isolation vs. VDD (RF1–RF2, RF1 Active) Figure 24. Isolation vs. Temp (RF2–RF1, RF2 Active) Figure 25. Isolation vs. VDD (RF2–RF1, RF2 Active) Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 11 of 16 PE42521 Product Specification Typical Performance Data @ 25°C and VDD = 3.4V unless otherwise specified Figure 26. Isolation vs. Temp (RFC–RF2, RF1 Active) Figure 27. Isolation vs. VDD (RFC–RF2, RF1 Active) Figure 28. Isolation vs. Temp (RFC–RF1, RF2 Active) Figure 29. Isolation vs. VDD (RFC–RF1, RF2 Active) ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 12 of 16 Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions PE42521 Product Specification Evaluation Kit Figure 30. Evaluation Kit Layout The SPDT switch evaluation board was designed to ease customer evaluation of Peregrine’s PE42521. The RF common port is connected through a 50Ω transmission line via the SMA connector, J1. RF1 and RF2 ports are connected through 50Ω transmission lines via SMA connectors J2 and J3, respectively. A 50Ω through transmission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4 provides DC and digital inputs to the device. For the true performance of the PE42521 to be realized, the PCB should be designed in such a way that RF transmission lines and sensitive DC I/O traces are heavily isolated from one another. PRT-30186 Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 13 of 16 PE42521 Product Specification Figure 31. Evaluation Board Schematic DOC-12827 Notes: 1. Use PRT-30186-02 PCB 2. CAUTION: Contains parts and assemblies susceptible to damage by electrostatic discharge (ESD) ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 14 of 16 Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions PE42521 Product Specification Figure 32. Package Drawing 16-lead 3x3 mm QFN 0.10 C 3.00 A (2X) 0.28 (X16) 1.70±0.05 B 9 0.50 (X12) 12 0.575 (X16) 13 8 1.70±0.05 3.00 4 0.10 C 1.75 3.40 16 5 0.23±0.05 (X16) 0.50 1 (2X) 1.50 0.375±0.05 (X16) 1.75 Pin #1 Corner 3.40 TOP VIEW BOTTOM VIEW RECOMMENDED LAND PATTERN DOC-01881 0.10 C 0.10 0.05 0.80 MAX 0.05 C C A B C ALL FEATURES SEATING PLANE 0.203 0.05 C SIDE VIEW Figure 33. Top Marking Specifications 42521 YYWW ZZZZZ = Pin 1 designator YYWW = Date code ZZZZZ = Last five digits of lot number 17-0009 Document No. DOC-12814-3 | www.psemi.com ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 15 of 16 PE42521 Product Specification Figure 34. Tape and Reel Specifications Tape Feed Direction Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2. Camber in compliance with EIA 481 3. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole Ao = 3.30 Bo = 3.30 Ko = 1.10 Pin 1 Top of Device Device Orientation in Tape Table 6. Ordering Information Order Code Description Package Shipping Method PE42521MLBA-Z PE42521 SPDT RF switch Green 16-lead 3x3 mm QFN 3000 units / T&R EK42521-02 PE42521 Evaluation kit Evaluation kit 1 / Box Sales Contact and Information For sales and contact information please visit www.psemi.com. Advance Information: The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification: The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification: The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). The information in this datasheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. ©2012-2013 Peregrine Semiconductor Corp. All rights reserved. Page 16 of 16 No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, UltraCMOS and UTSi are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com. Document No. DOC-12814-3 | UltraCMOS® RFIC Solutions