RECTRON BAS40WS SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Speed * Low turn-on voltage * PN Junction Guard for Transient and ESD Protection * Designed for Surface Mount Application * Plastic Material-UL Recognition Flammability Classification 94V-O SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071(1.80) .063(1.60) .006(.15) .014(.35) .010(.25) .055(1.40) .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .106(2.70) .098(2.50) .003(.08) * * * * * MAX.039(1.00) Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. REF .019(0.46) .004(.10) .000(.00) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (@T A =25 OC unless otherwise noted) RATINGS Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Maximum Forward Comtinuous Current Non-Repetitive Peak Forward Surge Current @t<1.0S Maximum Power Dissipation Thermal Resistance junction to ambient Operating and Storage Temperature Range SYMBOL BAS40WS UNITS VRMR VRWR VR 40 Volts IF 200 mAmps IFSM 600 mAmps PD 200 mW RθJA 625 K/W TJ,TSTG -55 to + 150 O C o ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) SYMBOL MIN. TYP. MAX. UNITS Reverse Breakdown Voltage CHARACTERISTICS (IR=10µA) V(BR)R 40 - - V Reverse voltage leakage current (VR=30V) IR - 20 200 nA - 0.38 - 0.5 - 1 (IF=1mA) Forward voltage (IF=10mA) VF - (IF=40mA) V Capacitance between terminals (VR=0V,f=1MHz) CT - 4 5 pF Reverse Recovery Time (IF=IR=10mA,RL= 100Ω,Irr=0.1xIR) trr - - 5 ns 2006-3 RATING AND CHARACTERISTICS CURVES ( BAS40WS ) 102 103 10-1 10-2 0 0.4 0.2 0.6 0.8 Ta=85OC 1 10-1 Ta=25OC 0 10 20 30 40 VF.FORWARD VOLTAGE(V) VR.REVERSE VOLTAGE (V) Figure1 Forward current as a function of forward voltage;typical values Figure2 Reverse current as a function of reverse voltage;typical values 103 5 f =10kHz 102 10 1 102 10-2 1.0 Cd.DIODE CAPACITANCE (pF) Rdiff. DIFFERENTIAL FORWARD RESISTANCE (Ω) IR.REVERSE CURRENT (µA) 1 Ta=-4 O 0C 10 Ta= 150 O C Ta= O 85 C Ta= O 25 C IF.FORWARD CURRENT (mA) Ta=150OC 10-1 1 10 102 Ta=25OC f =1MHz 4 3 2 1 0 0 10 30 20 40 IF.FORWARD CURRENT (mA) VR.REVERSE VOLTAGE (V) Figure3 Differential forward resistance as a function of forward current;typical values Figure4 Diode capacitance as a function of reverse voltage;typical values RECTRON DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. RECTRON