ROITHNER LDS-1310-005-FW

LDS-1310-005-FW
TECHNICAL DATA
Infrared Laser Diode
Features
Applications
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Output Power: 5 mW
Typical 1310 nm Emission Wavelength
Single mode
High Reliability, High Efficiency
Optical Fiber Communication
Free-space Optical Communication
Specifications (25°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
Spectral Width
Emitting area
Wavelength Temperature Coefficient
Beam Divergence
Polarization
Electrical Specifications
Slope Efficiency
Threshold Current
Operating Current
Operating Voltage
Series Resistance
Monitor Current
Package Style
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
19.04.2010
Symbol
Min.
Typ.
Max.
Unit
PO
λC
Δλ
WxH
θ┴×θ║
1290
-
5
1310
≤ 3.0
4x1
0.35
40x20
TE
1330
-
mW
nm
nm
µm
nm/°C
Deg
ES
ITH
IF
UF
RD
IPD
-
-
W/A
mA
mA
V
Ω
µA
UR
TOP
TSTG
RLT1550-500HHL
> 0.2
≤ 15
≤ 40
≤ 1.5
≤8
≥ 100
TO18
2.0
+10 … +30
-40 ... +85
V
°C
°C
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Package Dimensons
TO18 Package (Unit:mm)
Bottom View
Typical Performance Curves
19.04.2010
RLT1550-500HHL
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Notes
1. High power laser diodes are high energy laser devices. It is harmful to human body and
health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and
voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also be
shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate
current and power. The excessive current would accelerate aging and shorten lifetime,
even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe precaution
for handling electrostatitic sensitive devices.
19.04.2010
RLT1550-500HHL
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