LASER DIODE SPECIFICATIONS Customer : Model : QL67F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer ♦ OVERVIEW QL67F6S-A/B/C is a MOCVD grown 670 nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for opto-electronic devices such as Bar Code Reader. ♦ APPLICATION – Optical Leveler – Laser Module – Bar Code Reader ♦ FEATURES – Visible Light Output λp = 670 nm : – Optical Power Output : 10 mW CW – Package Type : TO-18 (5.6mmφ) – Built-in Photo Diode for Monitoring Laser Output ♦ ELECTRICAL CONNECTION Bottom View A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 Fig. 2 Fig. 3 QL67F6SA QL67F6SB QL67F6SC Pin Configuration ♦ ABSOLUTE MAXIMUM RATING at Tc=25℃ Items Symbols Values Unit Optical Output Power P 12 mW Laser Diode Reverse Voltage V 2 V Photo Diode Reverse Voltage V 30 V Operating Temperature Topr -10 ～ +60 °C Storage Temperature Tstg -40 ～ +85 °C ♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25℃ Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 10 - mW - Threshold Current Ith - 40 60 mA - Operating Current Iop - 50 70 mA Po=10mW Operating Voltage Vop - 2.3 2.6 V Po=10mW Lasing Wavelength λp 660 670 680 nm Po=10mW Beam Divergence Beam Angle θ II 8 11 15 deg Po=10mW θ ⊥ 24 32 35 deg Po=10mW ∆ θ II - - ±1.5 deg Po=10mW ∆θ - - ±2.5 deg Po=10mW 0.3 0.6 0.9 mA Po=10mW ⊥ Monitor Current Im Astigmatism As Optical Distance ∆X, ∆Y, ∆Z 30 - - µm ±60 µm NOTICE : QL67F6S-A/B/C to be operated on APC circuit The above product specification are subject to change without notice. ♦ PACKAGE DIMENSION ♦ PACKING