2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min 4 PC 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ I B =20mA 0 1 0 2 3 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 1 1 5 100 25˚C 50 –30˚C 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 1 5 10 15 3 1 0.5 0.1 1 10 Safe Operating Area (Single Pulse) (V C E =12V) 10 10 Typ 5 at si nk Without Heatsink Natural Cooling he 0.5 ite 1 100 fin Collecto r Cur ren t I C (A) C In 10 D s s ith 20 0m 130 s W 10 3m m 1000 2000 P c – T a Derating 40 30 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics Maxim um Power Dissi pation P C (W) 0.5 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Cut -off Fre quen cy f T ( MH Z ) D C Cur r ent Gai n h F E 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 20 0.02 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) 5A Collector-Emitter Voltage V C E (V) 100 5 Temp) 1 e Te 50mA 5 10 mp) 100 mA 2 e Te 20 0m A 10 Cas A ˚C ( 300m (V C E =4V) 15 3 125 mA Collector Current I C (A) 0 50 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1A Collector Current I C (A) 7 m 00 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 15 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a (Cas hFE 2.0±0.1 (Case V(BR)CEO A 4.8±0.2 –30˚C V 15 25˚C 6 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Unit 200 2.0 Ratings VCBO 5.0±0.2 Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 50 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.1 3 10 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 79