SANKEN STR3A151

STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Features and Benefits
Description
• Current mode PWM control
• Built-in Random Switching function: reduces
EMI noise, simplifies EMI filters, and cuts cost by
external part reduction
• Built-in Slope Compensation function: avoids
subharmonic oscillation
• Built-in Leading Edge Blanking (LEB) function
• Auto Standby function:
▫ Input power, PIN < 10 mW at no load with low power
consumption shunt regulator
▫ Normal load operation: PWM switching
▫ Light load operation: Standby mode (Burst oscillation)
STR3A100 series are power ICs for switching power supplies,
incorporating a power MOSFET and a current mode PWM
controller IC in one package.
Including a startup circuit and a standby function in the
controller, the product achieves low power consumption, low
standby power, and high cost-effectiveness in power supply
systems, while reducing external components.
The products are provided in an industry standard DIP8
package.
Applications
Switching power supplies for electronic devices such as:
• Stand-by power supply for LCD/PDP television,
desktop PC, multi-function printer, audio equipment,
and so forth
• Small switched-mode power supply (SMPS) for printer,
BD/DVD player, set-top box, and so forth
• Auxiliary power supply for air conditioner, refrigerator,
washer, dishwasher, and so forth
Continued on the next page…
Package: DIP8
Not to scale
Typical Application
C9
CRD Snubber Circuit
D1
VAC
C5
L2
D4
T1
R3
R9
PC1
P
C1
D3
7
6
R8
S
C8
C6
R6
5
D2
D/ST D/ST D/ST
NC D/ST
C4
R4
R5
C7
8
VOUT
U2
R2
R7
U1
STR3A100
C2
D
GND
S/OCP VCC GND FB/OLP
C, RC
Damper
Snubber
Circuit
1
ROCP
2
3
4
C3
PC1
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Features and Benefits (continued)
• Soft Start function: reduces stress on internal power MOSFET
and secondary output rectifier diode at startup
• Protection Functions:
▫ Overcurrent Protection function (OCP); pulse-by-pulse,
built-in compensation circuit to minimize OCP point variation
on AC input voltage
▫ Overload Protection function (OLP); auto restart, built-in
timer, reduces heat during overload condition, and no external
components required
▫ Overvoltage Protection function (OVP); latched shutdown
▫ Thermal Shutdown function (TSD); latched shutdown
Selection Guide
Part Number
STR3A151
STR3A152
STR3A153
STR3A154
STR3A155
fOSC
(kHz)
67
POUT*
(W)
MOSFET
OVP/TSD
VDSS(min)
(V)
RDS(on)(max)
(Ω)
230 VAC
85 to 265 VAC
650
4.0
3.0
1.9
1.4
1.1
24
30
36
40
43
16
23
30
32
35
Latched
*The listed output power is based on the thermal ratings, and the peak output power can be 120% to
140% of the value stated here. At low output voltage and short duty cycle, the output power may be less
than the value stated here.
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
2
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
The polarity value for current specifies a sink as "+," and a source as “−,” referencing the IC.
Absolute Maximum Ratings Unless specifically noted, TA is 25°C
Characteristic
Drain Peak Current1
Symbol
IDPEAK
Notes
Pins
STR3A151
3.6
A
4
A
5.2
A
6.4
A
STR3A153
Single pulse
8−1
STR3A155
Avalanche
EAS
Unit
STR3A152
STR3A154
Energy2
Rating
7.2
A
STR3A151
Single pulse, ILPEAK = 2.13 A
53
mJ
STR3A152
Single pulse, ILPEAK = 2.19 A
56
mJ
STR3A153
Single pulse, ILPEAK = 2.46 A
72
mJ
STR3A154
Single pulse, ILPEAK = 2.66 A
83
mJ
STR3A155
Single pulse, ILPEAK = 3.05 A
8−1
110
mJ
−2 to 6
V
2−3
32
V
4−3
−0.3 to 14
V
4−3
1.0
mA
1.68
W
1.76
W
S/OCP Pin Voltage
VOCP
1−3
Control Part Input Voltage
VCC
FB/OLP Pin Voltage
VFB
FB/OLP Pin Sink Current
IFB
STR3A151
STR3A152
MOSFET Power Dissipation3
PD1
STR3A153
STR3A154
Control Part Power Dissipation
PD2
VCC × ICC
Operating Ambient Temperature
Storage Temperature
Channel Temperature
Mounted on 15 mm × 15 mm
printed circuit board
8−1
STR3A155
1.81
W
2−3
1.3
W
TOP
–
−40 to 125
°C
Tstg
–
−40 to 125
°C
Tch
–
150
°C
1Refer
to MOSFET Safe Operating Area Curve.
2Refer to MOSFET Avalanche Energy Derating Coefficient Curve.
3Refer to MOSFET Temperature versus Power Dissipation Curve.
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
3
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Electrical Characteristics of Control Part Unless specifically noted, TA is 25°C, VCC = 18 V
Characteristic
Symbol
Operation Start Voltage
VCC(ON)
Operation Stop Voltage*
VCC(OFF)
Circuit Current in Operation
ICC(ON)
Minimum Start Voltage
VST(ON)
Startup Current
ISTARTUP
Startup Current Threshold Biasing
Voltage*
Average Operation Frequency
Frequency Modulation Deviation
Maximum Duty Cycle
Leading Edge Blanking Time
Test Conditions
VCC = 12 V
Pins
Min.
Typ.
Max.
Unit
2–3
13.8
15.3
16.8
V
2–3
7.3
8.1
8.9
V
2–3
−
−
2.5
mA
8–3
−
40
−
V
2–3
−3.9
−2.5
−1.1
mA
VCC(BIAS)
2–3
8.5
9.5
10.5
V
fOSC(AVG)
8–3
60
67
74
kHz
VCC = 13.5 V
Δf
8–3
−
5
−
kHz
DMAX
8–3
65
74
83
%
tBW
–
−
350
−
ns
OCP Compensation Coefficient
DPC
–
−
17
−
mV/μs
OCP Compensation Duty Cycle Limit
DDPC
−
−
36
−
%
OCP Threshold Voltage at
Zero Duty Cycle
VOCP(L)
1–3
0.69
0.78
0.87
V
OCP Threshold Voltage at
36% Duty Cycle
VOCP(H)
1–3
0.79
0.88
0.97
V
Maximum Feedback Current
IFB(MAX)
4–3
−110
−70
−35
μA
Minimum Feedback Current
IFB(MIN)
4–3
−30
−15
−7
μA
FB/OLP Oscillation Stop Threshold
Voltage
VFB(OFF)
STR3A151
STR3A152
STR3A153
VCC = 32 V
4–3
1.09
1.21
1.33
V
STR3A154
STR3A155
VCC = 32 V
4–3
0.85
0.98
1.09
V
OLP Threshold Voltage
VFB(OLP)
VCC = 32 V
4–3
7.3
8.1
8.9
V
OLP Operation Current
ICC(OLP)
VCC = 12 V
2–3
−
230
−
μA
tOLP
–
54
70
86
ms
FB/OLP Clamp Voltage
OLP Delay Time
VFB(CLAMP)
4–3
11.0
12.8
14.0
V
OVP Threshold Voltage
VCC(OVP)
2–3
27.5
29.5
31.5
V
TJ(TSD)
−
135
−
−
°C
Thermal Shutdown Activating
Temperature
*VCC(BIAS) > VCC(OFF) always.
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
4
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Electrical Characteristics of MOSFET Unless specifically noted, TA is 25°C
Characteristic
Symbol
Drain-to-Source Breakdown Voltage
VDSS
Drain Leakage Current
IDSS
Test Conditions
Pins
Min.
Typ.
Max.
Unit
8–1
650
–
–
V
8–1
–
–
300
μA
–
–
4.0
Ω
–
–
3.0
Ω
–
–
1.9
Ω
STR3A154
–
–
1.4
Ω
STR3A155
–
–
1.1
Ω
8–1
–
–
250
ns
–
–
–
18
°C/W
–
–
–
17
°C/W
STR3A151
STR3A152
On-Resistance
Switching Time
RDS(ON)
STR3A153
tf
STR3A151
STR3A152
STR3A153
Thermal Resistance
Rθch-C
STR3A154
STR3A155
STR3A150-DS
8–1
The thermal
resistance
between channel
and case. Case
temperature (TC)
is measured at
the center of the
branded side.
SANKEN ELECTRIC CO., LTD.
5
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Characteristic Performance
STR3A151
MOSFET Safe Operating Area Curve
100
10
Single pulse, TA = 25°C
0.1 ms
80
Drain Current, ID (A)
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
60
40
20
0
0
25
50
75
100
125
1
1 ms
Drain current limited
by on-resistance
0.1
To use this graph, apply the S.O.A.
temperature derating coefficient
taken from the graph at the left
150
Channel Temperature, Tch (°C)
0.01
1
10
100
1000
Drain-to-Source Voltage, VDS (V)
MOSFET Temperature versus Power Dissipation Curve
100
Allowable Power Dissipation, PD1 (W)
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
80
60
40
20
0
25
50
75
100
125
150
2.0
PD1 = 1.68 W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Transient Thermal Resistance, Rθch-c (°C/W)
Channel Temperature, Tch (°C)
10
25
50
75
100
125
150
Ambient Temperature, TA (°C)
Transient Thermal Resistance Curve
1
0.1
0.01
10–6
10–5
10–4
10–3
10–2
10–1
Time (s)
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
6
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Characteristic Performance
STR3A152
MOSFET Safe Operating Area Curve
100
10
Single pulse, TA = 25°C
0.1 ms
80
Drain Current, ID (A)
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
60
40
20
0
0
25
50
75
100
125
1
1 ms
Drain current limited
by on-resistance
0.1
To use this graph, apply the S.O.A.
temperature derating coefficient
taken from the graph at the left
150
Channel Temperature, Tch (°C)
0.01
1
10
100
1000
Drain-to-Source Voltage, VDS (V)
MOSFET Temperature versus Power Dissipation Curve
100
Allowable Power Dissipation, PD1 (W)
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
80
60
40
20
0
25
50
75
100
125
150
2.0
PD1 = 1.68 W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Channel Temperature, Tch (°C)
25
50
75
100
125
150
Ambient Temperature, TA (°C)
Transient Thermal Resistance, Rθch-c (°C/W)
Transient Thermal Resistance Curve
100
10
1
0.1
0.01
10–6
10–5
10–4
10–3
10–2
10–1
Time (s)
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
7
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Characteristic Performance
STR3A153
MOSFET Safe Operating Area Curve
100
10
Single pulse, TA = 25°C
0.1 ms
80
Drain Current, ID (A)
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
60
40
20
0
0
25
50
75
100
125
1 ms
1
Drain current limited
by on-resistance
0.1
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
150
Channel Temperature, Tch (°C)
0.01
1
10
100
1000
Drain-to-Source Voltage, VDS (V)
MOSFET Temperature versus Power Dissipation Curve
100
Allowable Power Dissipation, PD1 (W)
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
80
60
40
20
0
25
50
75
100
125
150
2.0
PD1 = 1.76 W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Transient Thermal Resistance, Rθch-c (°C/W)
Channel Temperature, Tch (°C)
10
25
50
75
100
125
150
Ambient Temperature, TA (°C)
Transient Thermal Resistance Curve
1
0.1
0.01
10–6
10–5
10–4
10–3
10–2
10–1
Time (s)
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
8
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Characteristic Performance
STR3A154
MOSFET Safe Operating Area Curve
100
10
Single pulse, TA = 25°C
0.1 ms
80
Drain Current, ID (A)
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
60
40
20
0
0
25
50
75
100
125
1 ms
1
Drain current limited
by on-resistance
0.1
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
150
Channel Temperature, Tch (°C)
0.01
1
10
100
1000
Drain-to-Source Voltage, VDS (V)
MOSFET Temperature versus Power Dissipation Curve
100
Allowable Power Dissipation, PD1 (W)
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
80
60
40
20
0
25
50
75
100
125
150
2.0
PD1 = 1.76 W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Transient Thermal Resistance, Rθch-c (°C/W)
Channel Temperature, Tch (°C)
10
25
50
75
100
125
150
Ambient Temperature, TA (°C)
Transient Thermal Resistance Curve
1
0.1
0.01
0.001
10–6
10–5
10–4
10–3
10–2
10–1
Time (s)
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
9
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Characteristic Performance
STR3A155
MOSFET Safe Operating Area Curve
100
10
0.1 ms
80
1 ms
Drain Current, ID (A)
Safe Operating Area
Temperature Derating Coefficient (%)
S. O. A. Temperature Derating Coefficient Curve
60
40
20
0
0
25
50
75
100
125
Drain current limited
by on-resistance
1
Single pulse, TA = 25°C
0.1
To use this graph, apply the S.O.A
temperature derating coefficient
taken from the graph at the left
150
Channel Temperature, Tch (°C)
0.01
1
10
100
1000
Drain-to-Source Voltage, VDS (V)
MOSFET Temperature versus Power Dissipation Curve
100
Allowable Power Dissipation, PD1 (W)
EAS
Temperature Derating Coefficient (%)
MOSFET Avalanche Energy Derating Coefficient Curve
80
60
40
20
0
25
50
75
100
125
150
2.0
PD1 = 1.81 W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Transient Thermal Resistance, Rθch-c (°C/W)
Channel Temperature, Tch (°C)
10
25
50
75
100
125
150
Ambient Temperature, TA (°C)
Transient Thermal Resistance Curve
1
0.1
0.01
10–6
10–5
10–4
10–3
10–2
10–1
Time (s)
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
10
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Functional Block Diagram
2
Control Part
VCC
D/ST
Startup
UVLO
Reg
PWM
Oscillator
VREG
OVP
5, 6,
7, 8
TSD
DRV
SQ
R
OCP
VCC
4
OLP
Drain Peak Current
compensation
Feedback
control
FB/OLP
LEB
Slope
compensation
S/OCP
GND
1
3
Pin List Table
Pin-out Diagram
S/GND 1
8 D/ST
VCC 2
7 D/ST
GND 3
6 D/ST
FB/OLP 4
5 D/ST
STR3A150-DS
Number
Name
1
S/OCP
Function
2
VCC
Power supply voltage input for Control Part and input of Overvoltage
Protection (OVP) signal
3
GND
Ground
4
FB/OLP
5, 6,7, 8
D/ST
MOSFET source and input of Overcurrent Protection (OCP) signal
Feedback signal input for constant voltage control signal and input of
Overload Protection (OLP) signal
MOSFET drain pin and input of the startup current
SANKEN ELECTRIC CO., LTD.
11
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Package Diagram
DIP8 package
9.4 ±0.3
5
1
4
6.5 ±0.2
8
1.0 +0.3
-0.05
+0.3
1.52
-0.05
3.3 ±0.2
7.5 ±0.5
4.2 ±0.3
3.4 ±0.1
(7.6 TYP)
0.2 5 + 0.
- 0.01
5
０～１５° ０～１５°
2.54 TYP
0.89 TYP
0.5 ±0.1
Unit： mm
3A15x
SK YMD
Pb-free.
Device composition compliant
with the RoHS directive.
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
Part Number
Lot Number
Y is the last digit of the year (0 to 9)
M is the month (1 to 9, O, N, or D)
D is a period of days:
1 – 1st to 10th
2 – 11th to 20th
3 – 21st to 31st
Sanken Control Number
12
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
Because reliability can be affected adversely by improper storage
environments and handling methods, please observe the following
cautions.
Cautions for Storage
•
Ensure that storage conditions comply with the standard
temperature (5°C to 35°C) and the standard relative humidity
(around 40% to 75%); avoid storage locations that experience
extreme changes in temperature or humidity.
•
Avoid locations where dust or harmful gases are present and
avoid direct sunlight.
•
Reinspect for rust on leads and solderability of the products that
have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other
standard test periods, protect the products from power surges
from the testing device, shorts between the product pins, and
wrong connections. Ensure all test parameters are within the
ratings specified by Sanken for the products.
Remarks About Using Silicone Grease with a Heatsink
• When silicone grease is used in mounting the products on a
heatsink, it shall be applied evenly and thinly. If more silicone
grease than required is applied, it may produce excess stress.
• Volatile-type silicone greases may crack after long periods of
time, resulting in reduced heat radiation effect. Silicone greases
with low consistency (hard grease) may cause cracks in the mold
resin when screwing the products to a heatsink.
Our recommended silicone greases for heat radiation purposes,
which will not cause any adverse effect on the product life, are
indicated below:
Type
Suppliers
G746
Shin-Etsu Chemical Co., Ltd.
YG6260
Momentive Performance Materials Inc.
SC102
Dow Corning Toray Co., Ltd.
STR3A150-DS
Soldering
•
When soldering the products, please be sure to minimize the
working time, within the following limits:
260±5°C 10±1 s
(Flow, 2 times)
380±10°C 3.5±0.5 s (Soldering iron, 1 time)
• Soldering should be at a distance of at least 1.5 mm from the
body of the products.
Electrostatic Discharge
•
When handling the products, the operator must be grounded.
Grounded wrist straps worn should have at least 1 MΩ of
resistance from the operator to ground to prevent shock hazard,
and it should be placed near the operator.
•
Workbenches where the products are handled should be
grounded and be provided with conductive table and floor mats.
•
When using measuring equipment such as a curve tracer, the
equipment should be grounded.
•
When soldering the products, the head of soldering irons or the
solder bath must be grounded in order to prevent leak voltages
generated by them from being applied to the products.
•
The products should always be stored and transported in Sanken
shipping containers or conductive containers, or be wrapped in
aluminum foil.
SANKEN ELECTRIC CO., LTD.
13
July 20, 2012
STR3A151, STR3A152, STR3A153,
STR3A154, STR3A155
PWM Off-Line Switching Regulator ICs
• The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the
latest revision of the document before use.
• Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or
any other rights of Sanken or any third party which may result from its use.
• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device
failure or malfunction.
• Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and
its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever
long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales
representative to discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
• In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the
degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the
load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general,
derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such
as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses,
instantaneous values, maximum values and minimum values must be taken into consideration.
In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of
derating of junction temperature affects the reliability significantly.
• When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically
or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance
and proceed therewith at your own responsibility.
• Anti radioactive ray design is not considered for the products listed herein.
• Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network.
• The contents in this document must not be transcribed or copied without Sanken's written consent.
STR3A150-DS
SANKEN ELECTRIC CO., LTD.
14
July 20, 2012