MCH3475 Ordering number : ENA1000A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3475 General-Purpose Switching Device Applications Features • • Ultrahigh speed switching 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 30 V ±20 V 1.8 A PW≤10μs, duty cycle≤1% 7.2 A When mounted on ceramic substrate (900mm2×0.8mm) 0.8 W 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3475-TL-E 0.15 0.25 2.0 Packing Type : TL 1.6 FG TL 0.25 1 0.65 2 Electrical Connection 0.3 3 0.07 0.85 2.1 0 t o 0.02 LOT No. LOT No. 3 Marking 1 : Gate 2 : Source 3 : Drain 1 SANYO : MCPH3 2 http://semicon.sanyo.com/en/network 60612TKIM/D1207PE TIIM TC-00001029 No. A1000-1/7 MCH3475 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=0.9A, VGS=10V 135 180 mΩ RDS(on)2 ID=0.5A, VGS=4V 230 330 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions 30 V 1.2 VDS=10V, ID=0.9A 0.66 1 μA ±10 μA 2.6 1.1 V S 88 pF 19 pF Crss 11 pF td(on) tr 3.4 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=1.8A 3.6 ns 10.5 ns 4.0 ns 2.0 nC 0.33 nC 0.29 IS=1.8A, VGS=0V 0.86 nC 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=0.9A RL=16.7Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω S MCH3475 Ordering Information Device MCH3475-TL-E Package Shipping memo MCPH3 3,000pcs./reel Pb Free No. A1000-2/7 MCH3475 ID -- VDS 4.0 6.0V 1.6 0.6 0.4 0.2 VGS=2.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 0 1.0 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 330 300 270 ID=0.5A 0.9A 210 180 150 120 90 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 300 3.0 3.5 4.0 IT13108 5A 0. I D= 4V, = V GS 270 240 210 A .9 I =0 10V, D = VGS 180 150 120 90 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13110 IS -- VSD 3 2 VGS=0V 1.0 7 5 C 5° 3 2 = Ta --2 25 0.1 7 5 °C °C 75 3 2 3 2 0.1 7 5 3 2 75°C Source Current, IS -- A 1.0 7 5 0.01 7 5 3 2 0.01 7 0.001 2.5 330 IT13109 VDS=10V 2 2.0 360 60 --60 16 ⏐yfs⏐ -- ID 3 1.5 RDS(on) -- Ta 390 360 240 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 390 0.5 IT13107 Ta= --25 °C 25°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.6 0.4 0 Forward Transfer Admittance, ⏐yfs⏐ -- S 0.8 3.0V 0.2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 0.001 0.2 5 7 1.0 IT13111 Drain Current, ID -- A Ciss, Coss, Crss -- pF td(off) 10 7 tf td(on) tr 3 0.8 1.0 1.2 IT13112 f=1MHz 2 2 5 0.6 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=10V 3 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns 1.0 C 0.8 1.2 --25 °C 3.5V 15.0V 1.0 1.4 25° 1.2 Ta= 75° C Drain Current, ID -- A 10.0V 1.4 Drain Current, ID -- A VDS=10V 1.8 8.0V 1.6 ID -- VGS 2.0 V 1.8 2 Ciss 100 7 5 3 Coss 2 Crss 10 7 1.0 0.1 5 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT13113 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT13114 No. A1000-3/7 MCH3475 VGS -- Qg 10 8 10 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 1 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Total Gate Charge, Qg -- nC IT13115 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 2.0 0.8 PW≤10μs 10 0μ s 1m s 10 m s ID=1.8A DC op 10 0m er ati on 3 2 2 0 IDP=7.2A 1.0 7 5 0.1 7 5 3 0 ASO 2 VDS=10V ID=1.8A Operation in this area is limited by RDS(on). s (T a= 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13116 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8 0.2 m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13117 No. A1000-4/7 MCH3475 Taping Specification MCH3475-TL-E No. A1000-5/7 MCH3475 Outline Drawing MCH3475-TL-E Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1000-6/7 MCH3475 Note on usage : Since the MCH3475 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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