SavantIC Semiconductor Product Specification 2SB1392 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collector power dissipation Ta=25 2.0 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1392 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA;RBE=< -60 V V(BR)CBO Collector-base breakdown voltage IC=-10µA; IE=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-10µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.2 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 µA ICEO Collector cut-off current VCE=-50V; RBE=< -10 µA hFE-1 DC current gain IC=-1A ; VCE=-4V 60 hFE-2 DC current gain IC=-0.1A ; VCE=-4V 35 hFE-1 classifications B C 60-120 100-200 2 MIN TYP. MAX 200 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1392