MMBT589 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 A 2 L Emitter 3 3 1 1 1 Base 2 Top View V Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 B S 2 G Collector 3 C H D J K MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PD Total Device Dissipation 310 mW RθJA Thermal Resistance,junction to Ambient 403 ℃/W TJ, Tstg Junction and Storage Temperature -55-150 ℃ All Dimension in mm MARKING :589 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Collector-emitter cut-off current ICES VCES=-30V -0.1 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 µA hFE1 VCE=-2V,IC=-1mA 100 hFE2 VCE=-2V,IC=-500mA 100 hFE3 VCE=-2V,IC=-1A 80 hFE4 VCE=-2V,IC=-2A 40 DC current gain 300 VCE(sat)1 IC= -500mA, IB=-50 mA -0.25 V VCE(sat)2 IC= -1A, IB=-100 mA -0.3 V VCE(sat)3 IC= -2A, IB=-200 mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100 mA -1.2 V Base-emitter Turn-on voltage VBE(on) VCE=-2V, IC=-1A -1.1 V Collector-emitter saturation voltage Transition frequency Collector Output Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A fT Cob VCE=-5V, IC=-100 mA , f =100MHz f=1MHZ 100 MHz 15 pF Any changing of specification will not be informed individual Page 1 of 3 MMBT589 PNP Silicon General Purpose Transistor Elektronische Bauelemente 200 230 210 170 150 100 25°C 130 110 50 90 -55°C 70 0 0.01 0.001 0.1 1.0 50 10 Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1000 Figure 1. DC Current Gain versus Collector Current VBE(sat) 0.8 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 1.0 100 10 1000 100 mA 0.75 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 50 mA 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 0.8 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.4 0.1 0.85 Figure 4. Base Emitter Saturation Voltage versus Collector Current 1000 mA 0.01 IC/IB = 10 Figure 3. “On” Voltages 0.6 10 mA 0.9 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 0.95 IC, COLLECTOR CURRENT (mA) 1.0 0 100 IC, COLLECTOR CURRENT (mA) 1.0 0 10 1.0 IC, COLLECTOR CURRENT (AMPS) 0.9 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE = -1.0 V 125°C 190 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = -2.0 V 10 Any changing of specification will not be informed individual Page 2 of 3 MMBT589 PNP Silicon General Purpose Transistor Elektronische Bauelemente IC , COLLECTOR CURRENT (AMPS) 10 SINGLE PULSE TEST AT Tamb = 25°C 1s 1.0 100 ms 10 ms 1 ms 100 s 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 0.2 0.1 1.0E+00 0.05 0.02 Rthja , (t) 1.0E-01 D = 0.01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3