SECOS PZT194

PZT194
NPN Transistor
Elektronische Bauelemente
Silicon Planar Medium Power Transistor
RoHS Compliant Product
SOT-223
Description
The PZT194 is designed for medium
power amplifier applications.
Features
* 1 Amps Continous Current
* 60 Volt VCEO
REF.
A
C
D
E
I
H
* Complementary To PZT195
Date Code
1 9 4
B
C
E
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0
10
0.60
0.80
0.25
0.35
o
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ,Tstg
Parameter
Millimeter
Min.
Max.
13 TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
REF.
B
J
1
2
3
4
5
Value
Units
Collector-Base Voltage
80
V
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
V
Collector Current (DC)
1
Collector Current (Pulse)
2
5
200
Base Current
2
Total Power Dissipation
Junction and Storage Temperature
-55~+150
A
mA
W
C
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
I CBO
Emitter-Base Cutoff Current
I EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Min
80
60
I CES
5
-
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
100
100
80
30
150
-
Typ.
-
-
Max
-
Unit
V
V
V
100
100
nA
nA
100
0.25
0.5
1.1
1.0
300
10
nA
V
V
V
MH z
pF
Test Conditions
I C= 100µA, I E=0
I C= 10mA, I B=0
I E= 100µA, IC=0
VCB= 60V, I E=0
VEB=4V,I C=0
VCES = 60V
I C=500mA,IB=50 mA
I C=1A,IB=100mA
I C=1A,IB=100mA
I C=1A,VCE=5V
VCE= 5 V, I C=1mA
VCE= 5 V, I C=500mA
VCE= 5 V, I C=1A
VCE= 5 V, I C=2A
VCE= 10 V, IC= 50 mA,, f=100MHz
VCB= 10 V , f=1MHz,IE=0
*Measured under pulse condition. Pulse width≦300µs, Duty Cycle≦2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
PZT194
Elektronische Bauelemente
NPN Transistor
Silicon Planar Medium Power Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2