PZT359 PNP Silicon Planar High Current Transistor Elektronische Bauelemente RoHS Compliant Product Features 5 Amps continuous current, up to 10 Amp peak current. SOT-223 f f Mechanical Data f Very low saturation voltage f 5 5 C fe e Case: SOT-223 Plastic Package Excellent gain characteristic specified up to 10Amps. fe e f １．６f２ Weight: approx. 0.021g E 1 C Marking Code: 359 xxxx 2 3 fe e B (xxxx = date code) 1. BASE 2. COLLECTOR 3. EMITTER Maximum Ratings and Thermal Characteristics (TA = 25OC, unless otherwise noted) Parameter Symbol Junction Temperature Value Tj +150 Unit O O C C Storage Temperature Tstg -55 to +150 Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage V EBO -6 V Collector Current (DC) IC -5 A Collector Current (Pulse) IC Total Power Dissipation PD -10 3 W A *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics (TJ = 25 C, unless otherwise noted) O Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (w/ Real Device Limit) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current (w/ Real Device Limit) Emitter-Base Cutoff Current Collector Saturation Voltage 1 Collector Saturation Voltage 2 Collector Saturation Voltage 3 Collector Saturation Voltage 4 Base Saturation Voltage Base-Emitter Voltage DC Current Gain 1 DC Current Gain 2 DC Current Gain 3 DC Current Gain 4 DC Current Gain 5 Gain-Bandwidth Product http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Symbol BVCBO Min -140 Typ. - Max - Uni V BVCER -140 - - V I C=-1μA, R B<=1KΩ *BVCEO BVEBO I CBO -100 -6 - - -50 V V nA I C=-10mA, I B=0 I E=-100μA, IC=0 VCB=-100V, IE=0 I CER - - -50 nA VCB=-100V, R<=1KΩ I EBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT 100 100 50 30 - -20 -90 -160 -300 -1.01 -0.925 200 200 90 50 15 125 -10 -50 -115 -220 -420 -1.17 -1.16 300 - nA mV mV mV mV V V Test Conditions I C=-100μA, I E=0 VEB=-6V, IC=0 I C=-100mA, I B=-10mA I C=-1A, I B=-100mA I C=-2A, I B=-200mA I C=-4A, I B=-400mA I C=-4A, I B=-400mA VCE=-1V, I C=-4A VCE=-1V, I C=-10mA VCE=-1V, I C=-1A VCE=-1V, I C=-3A VCE=-1V, I C=-4A VCE=-1V, I C=-10A MHz VCE=-10V, IC=-100mA, f=50MHz Any changing of specification will not be informed individual Page 1 of 2 PZT359 PNP Silicon Planar Elektronische Bauelemente Output Capacitance O n-Time Off-Time Cob ton toff High Current Transistor - 65 110 460 - pF VCB=-10V, IE=0, f=1MHz ns VCC=-10V, IC=2A, I B1=-200mA,I B1=200mA *Measured under pulse condition. Pulse widthЉ Љ 300ȝs, Duty CycleЉ Љ 2% Spice parameter data is available upon request for this device. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2