S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 Pb-Free Package is Available 3 PACKAGING INFORMATION 1 1 K 2 E 2 Drain 3 Drain 3 D F 702 W 1 2 Source 702 =Device Code W =Date Code G REF. Gate 1 Gate C B Top View A B C D E F 2 Source Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.80 2.00 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.013 0.10 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage(RGS=1.0 MΩ) TC=25°C 1 Continuous Drain Current TC=100°C 1 Pulsed Drain Current 2 Continuous Gate-Source Voltage Non-Repetitive Gate-Source Voltage(tP≦ 50µS) SYMBOL RATING UNIT VDSS VDGR 60 60 ±115 ID ±75 IDM ±800 VGS ±20 VGSM ±40 THERMAL CHARACTERISTICS Total Device Dissipation TA=25°C 225 PD FR-5 Board 3 Derate above 25°C 1.8 Thermal Resistance, Junction to Ambient RθJA 556 Junction and Storage Temperature TJ, TSTG -55~150 Note: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0% 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina Vdc Vdc mAdc mAdc mAdc Vdc Vpk mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 T =25°C 1.0 Zero Gate Voltage Drain Current J IDSS TJ =125°C 500 Gate-Body Leakage Current, Forward IGSSF 100 Gate-Body Leakage Current, Reverse IGSSR -100 ON CHARACTERISTICS1 Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 On-State Drain Current ID(ON) 500 3.75 Static Drain-Source On-State Voltage VDS(ON) 0.375 Static Drain-Source On-State Resistance 1.4 7.5 RDS(ON) (TA=25°C) 1.8 7.5 Static Drain-Source On-State Resistance 13.5 RDS(ON) (TA=125°C) 13.5 Forward Transconductance gFS 80 DYNAMIC CHARACTERISTICS Input Capacitance Ciss 17 50 Output Capacitance Coss 10 25 Reverse Transfer Capacitance Crss 2.5 5.0 SWITCHING CHARACTERISTICS1 Turn-On Delay Time td(ON) 7 20 Turn-Off Delay Time td(OFF) 11 40 BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage VSD -1.5 Source Current Continuous(Body Diode) IS -115 Source Current Pulsed ISM -800 Note: 1. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦ 2.0% http://www.SeCoSGmbH.com/ 24-Nov-2009 Rev. B UNIT Vdc TEST CONDITION VGS = 0, ID = 10µAdc µAdc VGS=0, VDS = 60Vdc nAdc nAdc VGS=20Vdc VGS=-20Vdc Vdc mA VDS = VGS, ID =250µAdc VDS≧ 2.0VDS(ON),VGS=10Vdc VGS=10Vdc, ID =500mAdc Vdc VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc Ω VGS=5Vdc, ID =50mAdc VGS=10Vdc, ID =500mAdc Ω VGS=5Vdc, ID =50mAdc mmhos VDS≧ 2VDS(ON),ID =200mAdc pF pF pF VDS=25Vdc, VGS=0, f=1MHz VDS=25Vdc, VGS=0, f=1MHz VDS=25Vdc, VGS=0, f=1MHz nS VDD=25Vdc, ,ID≅500mAdc RG=25Ω,RL=50Ω, VGEN=10V Vdc mAdc mAdc IS=11.5mAdc,VGS=0V Any changes of specification will not be informed individually. Page 1 of 2 S2N7002 115 mA, 60 V, RDS(ON) = 7.5 Ω Elektronische Bauelemente N-Ch Small Signal MOSFET RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Nov-2009 Rev. B Any changes of specification will not be informed individually. Page 2 of 2