SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. B L M A FEATURES C N Lower Gate Charge RoHS Compliant J H MARKING CODE REF. 5509ASS = Date D A B C D E F G Code PACKAGE INFORMATION Package MPQ Leader Size SOP-8 3K 13 inch K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings N-Ch P-Ch Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V 6.1 -4.8 A 4.9 -3.8 A 30 -30 A Continuous Drain Current Pulsed Drain Current 3 TA=25℃ ℃ ID TA=70℃ ℃ 1 IDM Total Power Dissipation Operating Junction and Storage Temperature Range PD 2 W TJ, TSTG -55~150 °C 0.016 W / °C 62.5 °C / W Linear Derating Factor Thermal Resistance Ratings Maximum Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A 3 RθJA Any changes of specification will not be informed individually. Page 1 of 7 SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω Elektronische Bauelemente N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250µA Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250µA Forward Transconductance gfs - 15 - S VDS=5V, ID=5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V - - 1 µA VDS=24V, VGS=0 - - 25 µA VDS=24V, VGS=0 - - 30 - - 35 Parameter Drain-Source Leakage Current(TJ =25℃ ℃) Test Conditions IDSS Drain-Source Leakage Current(TJ =70℃ ℃) Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=5.8A mΩ 55 2 Total Gate Charge Qg - 9.7 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3.1 - Td(on) - 3.3 - Tr - 4.8 - Td(off) - 26.3 - Tf - 4.1 - Input Capacitance Ciss - 823 - Output Capacitance Coss - 99 - Reverse Transfer Capacitance Crss - 77 - Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time VGS=4.5V, ID=5A VGS=2.5V, ID=4A nC ID=5.8A VDS=15V VGS=4.5V nS VDS=15V VGS=10V RG=3Ω RL=2.7Ω pF VGS=0 VDS=15V f=1.0 MHz Source -Drain Diode Forward On Voltage 2 VSD - - 1.0 V IS=1A, VGS=0 Trr - 16 - nS Reverse Recovery Charge Qrr - 8.9 - nC IS=5A, VGS=0, dl/dt =100A/µs Continuous Source Current (Body Diode) IS - - 2.5 A Reverse Recovery Time 2 VD=VG=0, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 7 SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω Elektronische Bauelemente P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID= -250µA Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS=VGS, ID= -250µA Forward Transconductance gfs - 11 - S VDS= -5V, ID= -5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V - - -1 µA VDS= -24V, VGS=0 - - -25 µA VDS= -24V, VGS=0 - - 55 - - 70 - - 120 Parameter Drain-Source Leakage Current(TJ =25℃ ℃) Test Conditions IDSS Drain-Source Leakage Current(TJ =70℃ ℃) Static Drain-Source On-Resistance 2 RDS(ON) Total Gate Charge Qg - 9.4 - Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 3 - Td(on) - 6.3 - Tr - 3.2 - Td(off) - 38.2 - Tf - 12 - Input Capacitance Ciss - 954 - Output Capacitance Coss - 115 - Reverse Transfer Capacitance Crss - 77 - Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time VGS= -10V, ID= -4.2A mΩ VGS= -4.5V, ID= -4A VGS= -2.5V, ID= -1A nC ID= -4 A VDS= -15V VGS= -4.5V nS VDS= -15V VGS= -10V RG=6Ω RL=3.6Ω pF VGS=0 VDS= -15V f=1.0 MHz IS= -1A, VGS=0 Source -Drain Diode Forward On Voltage 2 VSD - - -1.0 V Trr - 20.2 - nS Reverse Recovery Charge Qrr - 11.2 - nC Continuous Source Current (Body Diode) IS - - -2.2 A Reverse Recovery Time 2 IS= -4A, VGS=0, dl/dt=100A/µs VD=VG=0, VS= -1V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω CHARACTERISTIC CURVE (N-Ch) http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω CHARACTERISTIC CURVE (N-Ch) http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 5 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω CHARACTERISTIC CURVE (P-Ch) http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 6 of 7 SSG5509A Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω CHARACTERISTIC CURVE (P-Ch) http://www.SeCoSGmbH.com/ 27-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 7 of 7