SSG9435P -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B L D M A C N FEATURES J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H REF. A B C D E F G PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Ratings Unit VDS -30 V VGS TA = 25°C TA = 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 Symbol 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range ID ±20 V -6.5 A -5.2 A IDM -30 A IS -1.6 A 3.1 W PD 2.0 W -55 ~ 150 °C RθJC 25 °C / W RθJA 40 °C / W TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t ≦ 5 sec Thermal Resistance Junction-ambient (Max.) 1 t ≦ 10 sec Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. C Any changes of specification will not be informed individually. Page 1 of 4 SSG9435P -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -5 On-State Drain Current 1 ID(on) -30 - - - - 49 - - 75 Drain-Source On-Resistance 1 RDS(ON) μA A mΩ VDS= -24V, VGS= 0V VDS= -24V, VGS= 0V, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -5.7A VGS= -4.5V, ID= -5.0A Forward Transconductance 1 gfs - 19 - S VDS= -15V, ID= -5.7A Diode Forward Voltage VSD - -0.7 - V IS= -2.1A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 6.4 - Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 2.5 - nC ID= -5.7A VDS= -15V VGS= -4.5V nS VDD= -15V ID= -1A VGEN= -10V RL= 15Ω RG= 6Ω Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) - 10 - Tr - 2.8 - Td(off) - 53.6 - Tf - 46 - Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. C Any changes of specification will not be informed individually. Page 2 of 4 SSG9435P Elektronische Bauelemente -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. C Any changes of specification will not be informed individually. Page 3 of 4 SSG9435P Elektronische Bauelemente -6.5 A, -30 V, RDS(ON) 49 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. C Any changes of specification will not be informed individually. Page 4 of 4