BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) FEATURES 3 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 2 1 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 2.21 (0.087) 2.59 (0.102) • ENHANCEMENT MODE 5.25 (0.215) BSC • INTEGRAL PROTECTION DIODE TO–247 Pin 1 – Gate Pin 2 – Source Pin 3 – Drain • P–CHANNEL ALSO AVAILABLE AS BUZ905P & BUZ906P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage BUZ900P 160V BUZ901P 200V VGSS Gate – Source Voltage ID Continuous Drain Current 8A ID(PK) Body Drain Diode 8A PD Total Power Dissipation Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature RθJC Thermal Resistance Junction – Case Magnatec. ±14V @ Tcase = 25°C Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. 125W –55 to 150°C 150°C 1.0°C/W Prelim. 10/94 BUZ900P BUZ901P MAGNA TEC STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. VGS = –10V BUZ900P 160 ID = 10mA BUZ901P 200 Gate – Source Breakdown Voltage VDS = 0 IG = ±100µA ±14 VGS(OFF) Gate – Source Cut–Off Voltage VDS = 10V ID = 100mA 0.15 VDS(SAT)* Drain – Source Saturation Voltage VGD = 0 ID =8A BVDSX Drain – Source Breakdown Voltage BVGSS Typ. Drain – Source Cut–Off Current VGS = –10V V VDS = 10V Forward Transfer Admittance 1.5 V 12 V 10 BUZ900P mA VDS = 200V 10 BUZ901P yfs* Unit V VDS = 160V IDSX Max. ID = 3A 0.7 2 S Max. Unit DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. Typ. Ciss Input Capacitance 500 Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn–on Time VDS = 20V 100 toff Turn-off Time ID = 5A 50 VDS = 10V 300 f = 1MHz pF 10 ns * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%. Derating Chart 150 CH AN NE L D ISS IP ATION (W ) 125 100 75 50 25 0 0 25 50 75 100 125 150 TC — CASE TEMPERATURE (˚C) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 BUZ900P BUZ901P MAGNA TEC Typical Output Characteristics 9 6V 8 8 TC = 25˚C TC = 75˚C 7 5V 6 5 4V = P CH 4 12 3 5W 3V 2 6V 6 5V 5 4 4V = P CH I D — D R AIN C U RR EN T (A) 7 I D — D R AIN C U RR EN T (A) Typical Output Characteristics 9 12 5W 3 3V 2 2V 1 1 0 2V 0 0 10 20 30 40 50 60 70 80 90 0 10 V DS — DRAIN – SOURCE VOLTAGE (V) 30 40 50 60 70 80 90 V DS — DRAIN – SOURCE VOLTAGE (V) Forward Bias Safe Operating Area 10 20 Transconductance 100 V DS = 20V TC = 25˚C ER AT IO G FS — TR AN SC ON DU C TAN CE (S) OP N 1 0.1 BUZ901 0.01 1 10 200V BUZ900 160V I D — D R AIN C U RR EN T (A) DC 10 TC = 25˚C TC = 75˚C 1 0.1 100 1000 0 1 2 V DS — DRAIN – SOURCE VOLTAGE (V) 3 4 5 6 7 8 I D — DRAIN CURRENT (A) Drain – Source Voltage vs Gate – Source Voltage 10 TC = 25˚C V DS = 10V 8 TC = 25˚C 8 7 I D — D R AIN C UR R EN T (A) V DS — DR AIN – S OU RC E V OLTAGE (V ) Typical Transfer Characteristics 9 6 I D = 6A 4 I D = 3A TC = 75˚C 6 TC = 100˚C 5 4 3 2 2 I D = 1A 1 0 0 0 2 4 6 8 10 12 14 0 V GS — GATE – SOURCE VOLTAGE (V) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. 1 2 3 4 5 6 7 8 V GS — GATE – SOURCE VOLTAGE (V) Prelim. 10/94