AO3160 600V,0.04A N-Channel MOSFET General Description The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline powersupply designs. Features VDS 700V@150℃ ID (at VGS=10V) 0.04A RDS(ON) (at VGS=10V) < 500Ω RDS(ON) (at VGS=4.5V) < 600Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain CurrentA,F B Pulsed Drain Current Peak diode recovery dv/dt TA=25°C Power Dissipation A IDM dv/dt PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 1/5 Steady-State Steady-State ±20 V 0.03 A 0.12 5 1.39 V/ns W 0.89 TJ, TSTG Symbol t ≤ 10s Units V 0.04 ID TA=70°C Maximum 600 RθJA RθJL -50 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3160 600V,0.04A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Typ Max 600 - - - 700 - Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=5V, ID=8µA Static Drain-Source On-Resistance Static Drain-Source On-Resistance RDS(ON) ID=250µA, VGS=0V - 0.64 VDS=600V, VGS=0V - VDS=480V, TJ=125°C - V o - V/ C - 1 - 10 µA - - ±100 1.4 2 3.2 nΑ V VGS=10V, ID=0.016A - 232 500 Ω VGS=4.5V, ID=0.016A - 315 600 Ω - 0.024 - S - 0.74 1 V gFS Forward Transconductance VDS=40V, ID=0.016A VSD Diode Forward Voltage IS=0.016A,VGS=0V IS Maximum Body-Diode Continuous Current - - 0.04 A ISM Maximum Body-Diode Pulsed Current - - 0.12 A - 10 15 pF - 1.8 3 pF - 0.7 1 pF 5 10 15 Ω DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg - 1 1.5 nC - 0.1 0.15 nC Gate Drain Charge - 0.52 0.8 nC tD(on) Turn-On DelayTime - 4 12 ns tr Turn-On Rise Time - 5.2 8 ns tD(off) Turn-Off DelayTime - 12.5 19 ns tf trr - 55 82.5 ns Body Diode Reverse Recovery Time IF=0.016A,dI/dt=100A/µs,VDS=300V - 105 160 Qrr Body Diode Reverse Recovery Charge IF=0.016A,dI/dt=100A/µs,VDS=300V - 9.5 14.3 ns nC Qgs Gate Source Charge Qgd VGS=10V, VDS=400V, ID=0.01A VGS=10V, VDS=300V, ID=0.01A, RG=6Ω Turn-Off Fall Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/5 www.freescale.net.cn AO3160 600V,0.04A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.04 0.025 10V 0.035 VDS=40V 0.02 0.03 5V 0.015 4.5V 0.02 ID(A) ID (A) 0.025 25°C 0.01 0.015 4V 0.01 0.005 VGS=3.5 0.005 0 0 0 2 4 6 8 10 0 1 VDS (Volts) Fig 1: On-Region Characteristics 800 3 4 5 Normalized On-Resistance 2.5 600 RDS(ON) (Ω Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics VGS=4.5V 400 200 VGS=10V 0 2 VGS=4.5V ID=0.016A 1.5 VGS=10V ID=0.016A 1 0.5 0 0.01 0.02 0.03 0.04 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+00 40 1.0E-01 1.1 1 125° 0.9 IS (A) BVDSS (Normalized) ID=30A 125°C 1.0E-02 1.0E-03 25°C 25° 0.8 1.0E-04 -100 3/5 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO3160 600V,0.04A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.00 10 10.00 Capacitance (pF) VGS (Volts) Ciss VDS=400V ID=0.01A 8 6 4 Coss 1.00 Crss 0.10 2 0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 Qg (nC) Figure 7: Gate-Charge Characteristics 1.2 0.1 1 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 120 100µs 100 1ms 80 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.01 10ms 0.1s DC 1s 10s Power (W) 0.1 ID (Amps) 100 60 40 0.001 TJ(Max)=150°C TA=25°C 20 0.0001 0 1 10 100 1000 VDS (Volts) 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev1: April 2012 4/5 www.freescale.net.cn AO3160 600V,0.04A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.freescale.net.cn