AO4484 40V N-Channel MOSFET General Description The AO4484 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Features VDS (V) = 40V ID = 10A (VGS = 10V) RDS(ON) < 10mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 40 Gate-Source Voltage ±20 VGS TA=25°C Continuous Drain A Current Pulsed Drain Current TA=70°C ID B Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25°C A Power Dissipation TA=70°C G Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead 1/4 C 10 10.8 8 120 IAR 23 EAR 79 PD 1.7 2.0 1.1 RθJA RθJL -55 to 150 Typ 31 59 16 A mJ 3.1 TJ, TSTG Units V V 13.5 IDM Symbol t ≤ 10s Steady State Steady State Steady State W °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4484 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V 1 TJ = 55°C 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V Gate Threshold Voltage VDS = VGS ID = 250µA 1.7 ID(ON) On state drain current VGS = 10V, VDS = 5V 120 ±100 VGS = 10V, ID = 10A TJ=125°C 2.2 3 8.2 10 12.5 16 10 12.5 Forward Transconductance VDS = 5V, ID = 10A 75 VSD Diode Forward Voltage IS = 1A,VGS = 0V IS Maximum Body-Diode Continuous Current 0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1500 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=20V, ID=10A 2 µA nA V A VGS = 4.5V, ID = 8A gFS Units V VDS = 40V, VGS = 0V Static Drain-Source On-Resistance Max 40 VGS(th) RDS(ON) Typ mΩ S 1 V 2.5 A 1950 pF 215 pF 135 pF 3.5 5 Ω 27.2 37 nC 13.6 18 nC 4.5 nC Gate Drain Charge 6.4 nC Turn-On DelayTime 6.4 ns 17.2 ns 29.6 ns VGS=10V, VDS=20V, RL= 2Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 19 Turn-Off Fall Time 16.8 ns 40 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev1: Nov. 2010 2/4 www.freescale.net.cn AO4484 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 10V VDS= 5V 4.5V 100 80 80 60 ID(A) ID (A) 60 4V 40 40 3.5V 125°C 20 20 25°C VGS= 3V 0 0 0 1 2 3 4 2 5 16 3 3.5 4 4.5 Normalized On-Resistance 1.8 14 RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 12 VGS= 4.5V 10 8 VGS= 10V 6 4 VGS= 10V ID= 10A 1.6 1.4 VGS= 4.5V ID=8A 1.2 1.0 0.8 0 5 10 IF=-6.5A, 15 dI/dt=100A/µs 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 25 1E+02 ID= 10A 1E+01 1E+00 IS (A) RDS(ON) (mΩ ) 20 125°C 15 1E-01 125°C 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 10 25°C 25°CPRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn 1.2 AO4484 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS= 20V ID= 10A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1500 1000 2 500 0 0 Coss Crss 0 5 10 15 20 25 0 30 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 1000 TJ(Max)=150°C TA=25°C 100 10 100µs RDS(ON) limited 1 0.1 1m 10ms 100ms 10s TJ(Max)=150°C TA=25°C VDS (Volts) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 1 0.0001 IF=-6.5A, dI/dt=100A/µs 10 100 1 10 100 DC 0.01 0.1 Power (W) ID (Amps) 10µs In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton T FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4/4 www.freescale.net.cn