AO6801E 30V Dual P-Channel MOSFET General Description The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS -30V ID (at VGS=-10V) -2A RDS(ON) (at VGS=-10V) < 110mΩ RDS(ON) (at VGS=-4.5V) < 135mΩ RDS(ON) (at VGS=-2.5V) < 185mΩ Typical ESD protection HBM Class 1C D1 D2 Top View G1 1 6 S2 2 5 S1 G2 3 4 D2 D1 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 0.70 W 0.45 TJ, TSTG Symbol t ≤ 10s V -15 PD TA=70°C ±12 -1.6 IDM TA=25°C Power Dissipation B Units V -2.0 ID TA=70°C Maximum -30 RθJA RθJL -55 to 150 Typ 150 185 150 °C Max 180 230 180 Units °C/W °C/W °C/W www.freescale.net.cn AO6801E 30V Dual P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -15 TJ=55°C µA V 90 110 129 158 VGS=-4.5V, ID=-1.5A 105 135 mΩ VGS=-2.5V, ID=-1A 140 185 mΩ TJ=125°C VDS=-5V, ID=-2A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance µA ±10 Forward Transconductance Crss -5 -1.5 gFS Coss Units -1.05 VGS=-10V, ID=-2A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz A 7 -0.78 mΩ S -1 V -1 A 305 pF 42 pF 26 pF 8.5 17 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7 12 nC Qg(4.5V) Total Gate Charge 3.5 6 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2A 0.7 nC Qgd Gate Drain Charge 1.2 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 4 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=7.5Ω, RGEN=3Ω 23 ns 7 ns IF=-2A, dI/dt=500A/µs 9.5 Body Diode Reverse Recovery Charge IF=-2A, dI/dt=500A/µs 13.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO6801E 30V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 -10V VDS=-5V -4.5V 8 -6V 10 -ID(A) -ID (A) 6 -2.5V 4 125°C 5 2 25°C VGS=-2.0V 0 0 0 1 2 3 4 0 5 200 Normalized On-Resistance VGS=-2.5V RDS(ON) (mΩ Ω) 160 140 VGS=-4.5V 120 100 80 VGS=-10V 3 4 VGS=-10V ID=-2A 1.6 VGS=-4.5V ID=-1.5A 1.4 17 5 2 VGS=-2.5V 10 1.2 ID=-1A 1 0.8 60 0 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 260 1.0E+01 ID=-2A 240 1.0E+00 220 40 200 1.0E-01 180 160 125°C -IS (A) RDS(ON) (mΩ Ω) 2 1.8 180 125°C 1.0E-02 140 1.0E-03 120 100 25°C 1.0E-04 80 25°C 60 0 3/5 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO6801E 30V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=-15V ID=-2A 450 Ciss 400 350 Capacitance (pF) -VGS (Volts) 8 6 4 300 250 200 150 Coss 100 2 50 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100 TA=25°C -ID (Amps) RDS(ON) limited 100µs 1.0 1ms Power (W) 10µs 10.0 10ms 0.1 TJ(Max)=150°C TA=25°C 1 10s DC 0.0 0.01 0.1 10 1 -VDS (Volts) 10 0.1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=230°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO6801E 30V Dual P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn