AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and Crss. Features VDS ID (at VGS=10V) 40V 105A/85A RDS(ON) (at VGS=10V) < 2.9mΩ (< 2.6mΩ∗) RDS(ON) (at VGS=4.5V) < 3.7mΩ (< 3.5mΩ∗) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter AOT240L/AOB240L VDS Drain-Source Voltage 40 Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 20 Steady-State Steady-State A 16 68 A 231 mJ TJ, TSTG Symbol t ≤ 10s A EAS PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 60 IAS PD TA=25°C V 400 IDSM TA=70°C Units V 85 82 IDM TA=25°C Continuous Drain Current ±20 105 ID TC=100°C C AOTF240L RθJA RθJC 176 41 88 20 1.9 W 1.2 -55 to 175 AOT240L/AOB240L 15 65 0.85 W °C AOTF240L 15 65 3.6 Units °C/W °C/W °C/W * Surface mount package TO263 1/7 www.freescale.net.cn AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 40 Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 5 1 TO220/TO220F TJ=125°C VGS=4.5V, ID=20A TO220/TO220F VGS=10V, ID=20A TO263 VGS=4.5V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.2 V 2.4 2.9 3.7 4.7 3 3.7 mΩ 2.1 2.6 mΩ 2.7 3.5 mΩ A 78 1 V 105 A 3510 VGS=0V, VDS=20V, f=1MHz mΩ S 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance µA 1.7 400 VGS=10V, ID=20A Units V 1 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max VDS=40V, VGS=0V IGSS RDS(ON) Typ pF 1070 pF 68 pF 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 49 72 nC Qg(4.5V) Total Gate Charge 22 32 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 0.5 Qgs Gate Source Charge 9 nC Qgd Gate Drain Charge 7 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 10 ns tD(off) Turn-Off DelayTime 38 ns tf Turn-Off Fall Time 11 ns ns nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 58 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/7 www.freescale.net.cn AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 3.5V VDS=5V 7V 80 3V 80 10V 60 ID(A) ID (A) 60 125°C 40 40 20 20 25°C Vgs=2.5V 0 0 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 1.5 VGS=4.5V 4 2 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125°C 4 IS (A) RDS(ON) (mΩ Ω) 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-05 0 2 3/7 1.0E-04 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=20V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 Crss 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 600 1000.0 TJ(Max)=175°C TC=25°C 10µs RDS(ON) 10µs 500 100µs 1ms 10ms 10.0 DC 1.0 TJ(Max)=175°C TC=25°C 0.1 Power (W) ID (Amps) 100.0 40 17 5 2 10 400 300 200 0.0 100 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT240L and AOB240L (Note F) 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case for AOT240L and AOB240L (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.85°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F) 4/7 www.freescale.net.cn AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 1000.0 10µs RDS(ON) 100.0 TJ(Max)=175°C TC=25°C 500 10.0 1.0 DC TJ(Max)=175°C TC=25°C 0.1 Power (W) ID (Amps) 100µs 1ms 10ms 400 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 1000 17 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-to-Case 5 for AOTF240L (Note F) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF240L 2 10 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.6°C/W 1 0 18 0.1 PD Single Pulse Ton 0.01 0.00001 T 40 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F) 5/7 www.freescale.net.cn AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 150 100 50 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 15: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (° °C) Figure 16: Power De-rating (Note F) 175 1000 120 TA=25°C 80 100 Power (W) Current rating ID(A) 100 60 40 17 5 2 10 10 20 0 1 0 25 50 75 100 125 150 TCASE (° °C) Figure 17: Current De-rating (Note F) 175 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 19: Normalized Maximum Transient Thermal Impedance (Note H) 6/7 www.freescale.net.cn AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 7/7 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn