IRFR/U3711
SMPS MOSFET
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l 100% RG Tested
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
l
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
6.5mΩ
110A
D-Pak
IRFR3711
I-Pak
IRFU3711
Absolute Maximum Ratings
Symbol
Parameter
Max
Units
20
V
VDS
Drain-Source Voltage
VGS
ID @ TC = 25°C
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
100
ID @ TC = 100°C
69
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
c
f
f
A
440
g
2.5
W
120
0.96
-55 to +150
W/°C
°C
Thermal Resistance
Symbol
1 / 10
Parameter
h
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
h
gh
Typ
Max
–––
1.04
–––
50
–––
110
Units
°C/W
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IRFR/U3711
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
Typ
Max Units
20
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
–––
0.022
–––
–––
5.2
6.5
–––
6.7
8.5
1.0
–––
3.0
–––
–––
140
–––
–––
20
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Min
V/°C Reference to 25°C, ID = 1mA
mΩ
V
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
e
e
VDS = VGS, ID = 250µA
VDS = 20V, VGS = 0V
µA
nA
VDS = 16V, VGS = 0V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
53
–––
–––
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
–––
29
44
ID = 15A
Qgs
Gate-to-Source Charge
–––
7.3
–––
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.9
–––
Qoss
Output Gate Charge
–––
33
–––
RG
Gate Resistance
0.3
–––
2.5
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 10V
tr
Rise Time
–––
220
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
17
–––
tf
Fall Time
–––
12
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
2980
–––
VGS = 0V
Coss
Output Capacitance
–––
1770
–––
Crss
Reverse Transfer Capacitance
–––
280
–––
S
nC
VDS = 16V, ID = 30A
e
VGS = 4.5V
VGS = 0V, VDS = 10V
Ω
ns
pF
RG = 1.8Ω
e
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ
–––
Max
460
Units
mJ
–––
30
A
Diode Characteristics
Symbol
IS
ISM
2 / 10
Parameter
Continuous Source Current
Min
Typ
–––
–––
(Body Diode)
Pulsed Source Current
c
Max Units
110
f
MOSFET symbol
A
–––
–––
440
–––
0.88
1.3
–––
0.82
–––
Conditions
showing the
integral reverse
(Body Diode)
VSD
Diode Forward Voltage
V
trr
Reverse Recovery Time
–––
50
75
ns
Qrr
Reverse Recovery Charge
–––
61
92
nC
trr
Reverse Recovery Time
–––
48
72
ns
Qrr
Reverse Recovery Charge
–––
65
98
nC
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
e
e
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 16A, VR = 10V
di/dt = 100A/µs
e
TJ = 125°C, IF = 16A, VR = 10V
di/dt = 100A/µs
e
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IRFR/U3711
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
2.7V
100
2.7V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 25V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
Fig 3. Typical Transfer Characteristics
3 / 10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
VGS , Gate-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
3.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
TJ = 150 ° C
8.0
ID = 110A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFR/U3711
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
Crss
VGS , Gate-to-Source Voltage (V)
10
100000
ID = 30A
VDS = 16V
VDS = 10V
8
6
4
2
100
1
10
100
0
VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
1000
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4 / 10
2.6
100
100µsec
1msec
10
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3711
120
V DS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
100
RD
D.U.T.
RG
+
-VDD
80
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
t1
0.05
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 / 10
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IRFR/U3711
EAS , Single Pulse Avalanche Energy (mJ)
1400
15V
TOP
1200
L
VDS
DRIVER
BOTTOM
ID
13A
19A
30A
1000
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6 / 10
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U3711
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
7 / 10
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IRFR/U3711
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately at 90°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
10 / 10
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