Freescale AO4614A/ MC4614A N & P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 42 @ VGS = 10V 40 60 @ VGS = 4.5V 90 @ VGS = -10V -40 125 @ VGS = -4.5V ID (A) 5.8 4.8 -3.9 -3.4 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 40 -40 VGS Gate-Source Voltage ±20 ±20 TA=25°C 5.8 -3.9 ID Continuous Drain Current a TA=70°C 4.5 -3.1 IDM Pulsed Drain Current b 20 -20 a I 2.6 -2.5 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AO4614A/ MC4614A Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 32 V, VGS = 0 V (N-ch) VDS = -32 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 5.3 A (N-ch) VGS = 4.5 V, ID = 4.4 A (N-ch) VGS = -10V, ID = -3.6 A (P-ch) VGS = -4.5 V, ID = -2.6 A (P-ch) VDS = 15 V, ID = 5.3 A (N-ch) VDS = -15 V, ID = -3.6 A (P-ch) IS = 1.3 A, VGS = 0 V (N-ch) IS = -1.2 A, VGS = 0 V (P-ch) Min Typ Max 1 -1 ±100 1 -1 10 -10 Unit V V nA uA A A 42 60 90 125 13 11 0.77 -0.81 mΩ mΩ S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss N - Channel VDS = 20 V, VGS = 10 V, ID = 5.3 A N - Channel VDD = 20 V, RL = 3.5 Ω, ID = 5.3 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -20 V, VGS = -10 V, ID = -3.6 A P - Channel VDD = -20 V, RL = 5.5 Ω, ID = -3.6 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 3.6 1.3 1.4 2 18 16 5 287 42 34 5.8 1.6 2.3 4 5 17 7 384 36 36 nC ns pF nC ns pF www.freescale.net.cn Freescale AO4614A/ MC4614A Typical Electrical Characteristics - N-channel 5 0.15 4 3V ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.1 3.5V 0.05 4V,4.5V,6V,8V,10V 3 2 1 0 0 0 2 4 6 8 10 0 2 4 VGS - Gate-to-Source Voltage (V) ID-Drain Current (A) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.3 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C ID = 5.3A 0.2 0.1 0 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 10 500 F = 1MHz 10V,8V,6V,4.5V,4V 8 400 Capacitance (pf) ID - Drain Current (A) 6 3.5V 6 3V 4 Ciss 300 200 2 100 0 0 Coss Crss 0 0.2 0.4 0.6 0.8 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance 3 www.freescale.net.cn Freescale AO4614A/ MC4614A Typical Electrical Characteristics - N-channel 2 VDS = 20V ID = 5.3A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 -50 0 2 4 6 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) -25 8 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient 4 www.freescale.net.cn Freescale AO4614A/ MC4614A Typical Electrical Characteristics - P-channel 5 TJ = 25°C 4 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.3 0.2 3.5V 4V 0.1 4.5V,6V,8V,10V 3 2 1 0 0 0 1 2 3 4 ID-Drain Current (A) 0 5 2 1. On-Resistance vs. Drain Current 10 TJ = 25°C ID = -3.6A TJ = 25°C IS - Source Current (A) 0.6 0.4 0.2 0 1 0.1 0.01 0 2 4 6 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 600 4 F = 1MHz 10V,8V,6V,4.5V,4V 500 Ciss 3 Capacitance (pf) RDS(on) - On-Resistance(Ω) 6 2. Transfer Characteristics 0.8 ID - Drain Current (A) 4 VGS - Gate-to-Source Voltage (V) 3.5V 2 400 300 200 1 100 0 Coss Crss 0 0 0.2 0.4 0.6 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance 5 www.freescale.net.cn Freescale AO4614A/ MC4614A Typical Electrical Characteristics - P-channel 10 2 ID = -3.6A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = -20V 8 6 4 2 1.5 1 0 0.5 0 5 10 15 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 25 20 15 10 0 0.001 0.01 0.1 1 10 100 5 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient 6 www.freescale.net.cn Freescale AO4614A/ MC4614A Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. 7 www.freescale.net.cn